Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study of the Mobility for Strained p-type $Si_{1-x}Ge_x$ Alloys

변형 힘을 받는 p형 $Si_{1-x}Ge_x$의 이동도 연구

  • 전상국 (인하대학교 전자전기컴퓨터공학부)
  • Published : 1998.03.01
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Abstract

The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

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References

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