• 전력전자학회논문지
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• 제24권3호
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• pp.153-160
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• 2019

This study proposes a current source-type pulse generator to improve output voltage and current waveforms under a capacitively coupled plasma (CCP) system. The proposed circuit comprises two parallel-connected current source-type converters. These converters can satisfy the required output waveforms of plasma processing. The parallel-connected converters operate without reverse current fault by applying a time-delay control technique. Conventional voltage source converters based on pulse power supply exhibit drawbacks in short-circuit current, and problems occur when they are applied to a CCP system. The proposed pulse power supply based on a current source converter fundamentally solves the short-circuit current problem. Therefore, this topology can improve the voltage and current accuracy of a CCP system.

• 한국화재소방학회논문지
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• 제30권2호
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• pp.114-122
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• 2016

본 논문은 리튬배터리의 고온 및 단락전류에 따른 폭발 및 화재 위험성을 분석하기 위한 연구이다. 이에 대표적인 리튬배터리 종류인 리튬폴리머배터리 및 리튬이온배터리를 실험시료로 선정하였다. 고온에 따른 폭발위험성 측정결과 리튬폴리머배터리의 경우 평균 $170^{\circ}C$, 리튬이온배터리의 경우 평균 $187^{\circ}C$에서 폭발이 일어났다. 단락전류에 따른 온도상승측정결과 보호회로가 정상작동 할 경우 과전류를 제한하여 온도상승이 거의 없었지만, 보호회로가 고장 났을 경우 리튬폴리머배터리의 경우 평균 $115.7^{\circ}C$ 및 리튬이온배터리 경우 평균 $80.5^{\circ}C$까지 상승하여 화재 및 화상 위험성이 높게 나타나는 것으로 측정되었다.

• 대한전기학회논문지
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• 제44권10호
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.79-84
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• 2008

We are developing a small-sized high temperature superconducting magnetic energy storage (HTS-SMES) magnet with the nominal storage capacity of 600 kJ, which provides electric power with high quality to sensitive electric loads. Critical current and N-value of a high temperature superconductor with large current, which was selected for the development of the 600 kJ HTS-SMES magnet, were investigated in various oblique external magnetic fields. Based on the critical current and N-value measured for the short sample conductor, we discussed the DC V - I characteristic of a model coil fabricated with the same conductor of 500 m. The results show that the measured critical current and N-value of the conductor for parallel field are constant in external magnetic fields less than about 0.2 T. However, for oblique fields, its critical current and N -value abruptly decrease in all external magnetic fields. Moreover, the measured critical current of the model coil well agrees with the numerically calculated one based on the DC V - I characteristic measured for the short sample conductor. This suggest that losses and critical currents for an HTS-SMES magnet made up of a high temperature superconductor with anisotropic characteristic are predictable from the data of a short sample conductor.

• 한국초전도ㆍ저온공학회논문지
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• 제23권3호
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• pp.51-54
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• 2021

The DC system has less power loss compared to the AC system because there is no influence of frequency and dielectric loss. However, the zero-crossing point of the current is not detected in the event of a short circuit fault, and it is difficult to interruption due to the large fault current that occurs during the opening, so the reliability of the DC breaker is required. As a solution to this, an LC resonance DC circuit breaker combined a superconducting element has been proposed. This is a method of limiting the fault current, which rises rapidly in case of a short circuit fault, with the quench resistance of the superconducting element, and interruption the fault current passing through the zero-crossing point through LC resonance. The superconducting current limiting element combined to the DC circuit breaker plays an important role in reducing the electrical burden of the circuit breaker. However, at the beginning of a short circuit fault, superconducting devices also have a large electrical burden due to large fault currents, which can destroy the element. In this paper, the reactor is connected to the source side of the circuit using PSCAD/EMTDC. After that, the change of the fault current according to the reactor capacity and the electrical burden of the superconducting element were confirmed through simulation. As a result, it was confirmed that the interruption time was delayed as the capacity of the reactor connected to the source side increased, but peak of the fault current decreased, the zero-crossing point generation time was shortened, and the electrical burden of the superconducting element decreased.

• 전기학회논문지
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• 제67권10호
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• pp.1286-1291
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• 2018

In recent years, the proliferation of DER (distributed energy resources) is progressing rapidly. In particular, research on LVDC distribution grid with various advantages has begun. In order to commercialize this LVDC grid, direct current protection method should be established by analysis of DC faults. Recently, the development of HSCB (high-speed circuit breaker) for new ${\pm}750[V]$ LVDC grid has been researched. This paper deals with the calculation of the maximum short-circuit fault current of the HSCB as a part of the development of HSCB for the LVDC distribution grid. First, modeling using PSCAD was carried out for PV array with BESS on the Gochang Power Test Center system. Next, to calculate the rated capacity of HSCB, fault currents were calculated and the characteristics were analyzed through fault simulations. Thus, this study results can help to establish short-circuit capacity calculation of HSCB and protection plan for DC protection relay system.

• Journal of Electrical Engineering and Technology
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• 제12권4호
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• pp.1566-1574
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• 2017

When the inter-turn short circuit (ITSC) fault occurs, the distortion of the magnetic field is serious. The motor loss variations of each part are obvious, and the motor temperature field is also affected. In order to obtain the influence of the ITSC fault on the motor temperature distribution, firstly, the normal and the fault finite element models of the permanent magnet synchronous motor (PMSM) were established. The magnetic density distribution and the eddy current density distribution were analyzed, and the mechanism of loss change was revealed. The effects of different forms and degrees of the fault on the loss were obtained. Based on the loss analysis, the motor temperature field calculation model was established, and the motor temperature change considering the loop current was analyzed. The influence of the fault on the motor temperature distribution was revealed. The sensitivity factors that limit the motor continuous operation were obtained. Finally, the correctness of the simulation was verified by experiments. The conclusions obtained are of great significance for the fault and high temperature demagnetization of the permanent magnet analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.175-179
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• 2005

The main objective of this paper is to module design and pressure relief test a new type of polymer gapless surge arrester for power distribution line. Metal oxide surge arrester for most electric power system applications, power distribution line and electric train are now being used extensively to protect overvoltage due to lightning. Surge arresters with porcelain housing must not have explosive breakage of the housing to minimize damage to other equipment when subjected to internal high short circuit current. When breakdown of gapless elements in a surge arrester occurs due to flashover, fault short current flows through the arrester and internal pressure of the arrester rises. The pressure rise can usually be limited by fitting a pressure relief diaphragm and transferring the arc from the inside to the outside of the housing. However, there is possibility of porcelain fragmentation caused by the thermal shock, pressure rise, etc. Non-fragmenting of the housing is the most desired way to prevent damage to other equipment. The pressure change which is occurred by flashover become discharge energy. This discharge energy raises to damage arrester housing and arrester housing is dispersed as small fragment. Therefore, the pressure relief design is requested to obstruct housing dispersion.

• 대한전자공학회논문지
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• 제23권2호
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• pp.236-242
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• 1986

The dependence of the current-voltage characteristics of hydrogenated amorphous silicon pin solar cells on the illumimination light intensity has been investigated. The open circuit voltage increases linearly with increasing the logarithm of light intensity up to AM 1, and nearly saturates above AM 1, indicating the open circuit voltage approaching the built-in potential of the pin solar cell above AM 1. The short circuit current density increase with light intensity in proportion to I**0.85 before and I**0.97 after light exposure. Since the series resistance devreses and shunt resistance increases with light intensily, the fill factor increases with light illumination. To increase the fill factor at high illumination in large area solar cells, t6he grid pattern on the ITO substrates should be made. Long light exposure on the solar cells gives rise to the increase of bulk resistance and defect states, resulting in the decrease of the fil factor and short circuit current density. The potential drop in the bulk of the a-Si:H pin solar cells at short circuit condition increases with decreasing temperature, and increases after long light exposure.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.1000-1003
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• 2012

The superconducting fault current limiter (SFCL) can quickly limit the fault current shortly after the short circuit occurs and recover the superconducting state after the fault removes and plays a role in compensating the voltage sag of the sound feeder adjacent to the fault feeder as well as the fault current limiting operation of the fault feeder. Especially, the flux-lock type SFCL with an isolated transformer, which consists of two parallel connected coils on an iron core and the isolated transformer connected in series with one of two coils, has different voltage sag compensating and current limiting characteristics due to the winding direction and the inductance ratio of two coils. The current limiting and the voltage sag compensating characteristics of a SFCL using a transformer winding were analyzed. Through the analysis on the short-circuit tests results considering the winding direction of two coils, the SFCL designed with the additive polarity winding has shown the higher limited fault current than the SFCL designed with the subtractive polarity winding. It could be confirmed that the higher fault current limitation of the SFCL could be contributed to the higher load voltage sag compensation.