• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

• Journal of Welding and Joining
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• v.31 no.5
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• pp.1-6
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• 2013

In carrying out the elastic-plastic analysis, four conditions (equilibrium equation, constitutive equation, condition of compatibility and yield condition) should be satisfied. In welding, the temperature largely changed from a melting temperature to a room temperature. So, yield stress of materials largely changed, too. In particular, yield stress becomes about zero over $700^{\circ}C$. The analysis should be carried out under the condition that equivalent stress generated in temperature increment ${\Delta}T$ did not exceed yield stress of materials at high temperature over $700^{\circ}C$. It should be sufficiently recognized that the obtained results were not reliable if this condition was not satisfied.

• Journal of the Korean Society of Mechanical Technology
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• v.13 no.1
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• pp.17-22
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• 2011

As the quality of a weld joint is strongly influenced by process parameters the welding process, an intelligent algorithms that can predict the bead geometry and shape to accomplish the desired mechanical properties of the weldment should be developed. In this study, prepared by ${\Phi}1.6mm$ GMA welding of metal wire nose Advice jowelui 350A 600A grade level inverter welder and DAIHEN SCR's were carried out using welding. Welding conditions were 5.5m/min wire feed rate the welding current is rapidly transmit approximately 260A, welding voltage was about 30V. CTWD a 22mm, shielding gas was Ar 20L/min and the welding speed was a 240mm/min. Using data collected during welding equipment welding current and welding voltage waveform was analyzed by measuring the volume of the transition mode. Addition of $CaCO_3$ as a loss of the spread of the weld bead dilution rate decreased, suggesting that, GMA in the overlay welding bead shape control, dilution control and may be used as a welding flux is considered. Stabilizing effect of the arc by the Ca-containing $CaF_2$, $CaCO_3$, $CaMg(CO_3)_2$, respectively, welding flux 0.1wt.% added GMA welding and weld overlay were evaluated with dilution, $CaF_2$, and $CaMg(CO_3)_2$ added to the dilution of Seemed to increase.

• Journal of Radiation Industry
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• v.8 no.3
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• pp.141-146
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• 2014

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.1
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• pp.34-46
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• 2004

Copper films were prepared by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The DC bias is connected to the electrode which placed 1∼3cm above the polymer substrate. The pulse electrical field around the electrode attracts the positive charged copper ions generated from the dissociation of copper precursor, $Cu(hfac)_2$, under ECR plasma. Condensation of supersaturated copper ions in the space between the electrode and substrate, makes it possible to deposit copper film on the polymer substrate even at room temperature. In this study, optimization of the electrode configuration was carried out in order to obtain the uniform films. The uniformity of the deposited films were closely related to the parameters of electrode geometry such as electrode shape, thickness, grid size and the spacing between electrodes. The most uniform copper film was observed with the electrode that enabled uniform electrical field distribution across the whole dimension of electrode.