• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.249-252
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• 2003

This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog to comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an exective isolation strategy for removing noise and signal coupling of each sensor pixel. The 128$\times$144 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1872-1874
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• 2001

This paper presents an implantable telemetry LC resonance-type pressure sensor to measure the cerebral ventricle pressure. The sensor consists of an inductor and a capacitor. The LC resonant circuit consists of the sensor and an external antenna coil that are coupled magnetically. The resonance frequency of the circuit decreases as the applied pressure increases the capacitance of the sensor. The sensor is designed in consideration of the biocompatibility and long lifetime for continuous monitoring of the ventricle pressure. The sensor is simple to fabricate and small in comparison with others reported previously. The inductor is fabricated by electroplating and the variable capacitor is constructed with a flexible p+ diaphragm. Also, the deflection of the diaphragm, the variation of the capacitance and the resonance frequency are analyzed and calculated.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.04a
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• pp.89-94
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• 2001

A cylindrical capacitance-type spindle displacement sensor was designed and tested in the hard turning as a way to develop a sensor that can estimate cutting forces without using a tool dynamometer. The displacement sensor was installed between the face of spindle cover and the chucking element, and measured pure radial motion of the spindle. Ceramic inserts and tool steel workpieceof 65 Rc were used during the hard turning tests. The signals from the sensor showed the same pattern of cutting force variations as those from the tool dynamometer. The research results showed that the developed sensor could be utilized as an effective and cheap on-line sensing device to estimate cutting forces.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.12
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• pp.27-32
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• 2002

The intensity modulated type (reflective method) optical fiber sensor is a well -known method and widely applied to the displacement measurements and other industrial purposes. This type sensor has the advantages of relatively cheap cost, small sensor size and easiness of operation. The sensitivity of the sensor is very dependent of several error terms; the variation in the intensity of the light source and the changes in the surface reflectivity of the object. An optical fiber coupled displacement probe with a new compensation method is presented in this paper. The proposed displacement sensor can measure the displacements of the target surface independent of surface reflectivity error that is caused by the materials and surface processing grade.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.866-874
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• 2008

Motor frequency can be measured by a hall sensor. Among the many hall sensors, a linear type hall sensor is good at high accuracy frequency measuring problem. However, in general, this linear type hall sensor has DC offset which can vary along sensor's operating voltage change. Therefore, In motor frequency measurement problem using the linear hall sensor, it needs an estimator that can estimate frequency and DC offset simultaneously. In this paper, we propose the least mean square estimator to estimate motor frequency. To verify its performance, we compare the LMS estimator with a commercial analog tachometer. Experimental results shows the proposed LMS estimator works well in varying frequency and stationary DC offset.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.416-420
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• 2002

This Paper describes a matched-filter type strain sensor system using optical fiber Bragg grating (FBG) sensor. Matched-filter type uses another wavelength-matched FBG filter to track wavelength shift in the FBG sensor. Filter FBG is attached on a fiber stretcher and stretched by PZT actuator. To overcome the nonlinearity and hysteresis of the PZT actuator that degrades system accuracy, a string resonator which can measure an absolute strain is employed. And the effect of vibration modes on string resonator is investigated particularly regarding its sensitivity and stability.

• Journal of Sensor Science and Technology
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• v.14 no.4
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• pp.219-224
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• 2005

In this paper, a contact-type linear encoder-like capacitive displacement sensor (CLECDS) is proposed. It is based on the linear encoder capacitive displacement sensor that consists of two substrates with a series of conducting grating in identical size and it is used as a contact sensor of which the two substrates assembled faced to each other after coated with thin dielectric film. It was confirmed that the prototype of this sensor has resolution of about 126nm and measuring range of 20 mm in the test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1045-1053
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• 2002

This paper describes characteristics of the developed current sensor by means of two identically wound magnetic cores forming a clamp like for measurement of a low DC, or AC current. This sensor consists of peak value detectors, a sensor of an electrically compensated current transformer type, a reference alternating voltage, Precision measuring circuits to measure the output signals of sensor with harmonics, and can be measured up to 2 A at DC, or AC current. The current sensor shows a measurement accuracy of less than 0.3% in the frequency range 40 Hz - 10 HBz. The resolution and sensitivity of the sensor were evaluated 0.1 mA and 10 mV/mA, respectively.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.