• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.60-65
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition method on Si(100) substrates at a substrate temperature of $550^{\circ}C$ with oxygen pressures of 100mTorr, and subsequently to investigate their photoluminescence characteristics after post-annealed at $600^{\circ}C$ and $700^{\circ}C$. As a result for X-ray diffraction, $Ga_2O_3$ shape appeared with increasing annealing temperature. The luminescent spectra show a broad band extending from 350 to 600nm peaking at 460nm. A post-annealing treatment of $ZnGa_2O_4$ thin films led to the different shape of luminescent intensity and grain size.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.317-327
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• 2001

In this paper, we proposed a new detection method of pH image to effectively measure a 2-dimensional pH distribution of test materials by irradiating an frequency modulated light to LAPS using a reticle. It could measure simultaneously signals in one line by applying a modulated light having difference frequency for each pixel using a frequency modulating reticle, and calculating an amplitude with respect to a frequency component by the light source. To experiment the proposed method, we designed and implemented a reticle considering of a LAPS's characteristic, and reconstructed an image by frequency analysis using the implemented reticle and test pattern image. As a result, we verified that the proposed method using the reticle was able to detect 30 times faster for a $30{\times}30$ pixels pH image having a PSNR of 22-24 [dB] than conventional method.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.320-328
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• 2001

Two-dimensional array hydrophones with $8{\times}8$ elements were designed and fabricated using the PVDF(Polyvinylidene fluoride) piezoelectric film, and the method and system for ultrasonic field measurement in several MHz $\sim$ tens of MHz band using the hydrophones was established. The characteristics of frequency response relating to the backing materials were analyzed with the Mason equivalent circuit for design, and the accuracy of ultrasonic field measurement relating to the sizes and kerfs of piezoelectric elements was discussed. Good results of the measurement of ultrasonic field formed by a circular plane transducer of 2.25MHz in water were obtained by the system with the array hydrophones.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.286-294
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• 2001

In this study, 3-D underwater object recognition using the self-made 3-3 type composite ultrasonic transducer and modified SOFM(Self Organizing Feature Map) neural network are investigated. Properties of the self-made 3-3 type composite specimens are satisfied considerably with requirements as an underwater ultrasonic transducer's materials. 3-D underwater all object's recognition rates obtained from both the training data and testing data in different objects, such as a rectangular block, regular triangular block, square block and cylinderical block, were 100% and 94.0%, respectively. All object's recognition rates are obtained by utilizing the self-made 3-3 type composite transducer and SOFM neural network. From the object recognition rates, it could be seen that an ultrasonic transducer fabricated with the self-made 3-3 type composite resonator will be able to have application for the underwater object recognition.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.440-447
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• 1999

Tensile stress loaded on smart composite structures and thermal stress occurred during the during process of the smart composite materials with embedded optical fiber sensors affect directly the mechanical behavior of the embedded optical fiber sensors within the smart composite structures. Stress distribution within the optical fiber sensors varies with respect to the stacking sequence of the composite laminate and the coating conditions of the optical fibers. The cracks occurred within the composite laminate affect not only the fracture of the composite laminate but also the fracture of the optical fiber sensors embedded within the composite laminate. In this study, firstly, stress distribution of the optical fiber sensors embedded within the composite laminate which is subjected to the tensile and thermal stresses was analyzed using Finite Element Method. And, secondly, the effect of the stacking sequence of the composite laminate and the coating conditions of the optical fiber sensors on the stress distribution of the optical fiber sensors was investigated. Finally, the effect of the crack occurred within the smart composite laminate on the fracture behavior of the optical fiber sensors was also observed through the tensile test.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.350-356
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• 2000

The optimum composition ratios of primary solute(p-terphenyl) and secondary solute(popop) have been investigated in order to fabricate plastic scintillator with higher light output and less radiation damage. The radiation damage induced by $^{60}Co$ $\gamma$-irradiation depends on mainly the concentration of secondary solute. The spectral range of the luminescence was $400{\sim}450\;nm$, its peak emission appeared at 415 nm. The transmittance and the light output were not changed by radiation damage up to $1{\times}10^4\;Gy$ irradiation with $^{60}Co$ $\gamma$-rays.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.357-364
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• 2000

The structural, electrical and gas sensing characteristics of $LaFeO_3$ thin films fabricated by r.f. magnetron sputtering method on $Al_2O_3$ substrates were investigated. (121) domonant crystalline plane was observed for the films heat-treated at above $600^{\circ}C$ and gas sensing properties showed p-type semiconductor behaviors. Gas sensing characteristics of the $LaFeO_3$ thin films was studied as a function of film thicknesses and heat treatment temperatures. While the variation of the film thickness showed a little effect on the sensitivity, the heat treatment temperature was critical to the sensitivity. The thin films with thickness of 400 nm heat-treated at $800^{\circ}C$ showed the sensitivity of 400% for 5000ppm CO and 60% for 350ppm $NH_3$ at the working temperature of $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.