• 제목/요약/키워드: Semiconductor sheet

검색결과 131건 처리시간 0.041초

비정질 산화물 SiZnSnO 반도체 박막의 전기적 특성 분석 (Investigation on Electrical Property of Amorphous Oxide SiZnSnO Semiconducting Thin Films)

  • 변재민;이상렬
    • 한국전기전자재료학회논문지
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    • 제32권4호
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    • pp.272-275
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    • 2019
  • We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

게이트를 상정한 니켈 실리사이드 박막의 물성과 미세구조 변화 (Property and Microstructure Evolution of Nickel Silicides for Poly-silicon Gates)

  • 정영순;송오성;김상엽;최용윤;김종준
    • 한국재료학회지
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    • 제15권5호
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    • pp.301-305
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    • 2005
  • We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.

기판의 코로나 표면처리에 의한 탄소 나노튜브 투명전극의 물성 향상 (Improvement of Transparent Electrodes Based on Carbon Nanotubes Via Corona Treatment on Substrate Surface)

  • 한상훈;김부종;박진석
    • 반도체디스플레이기술학회지
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    • 제13권1호
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    • pp.7-12
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    • 2014
  • In this study, we investigate the effects of corona-discharge pre-treatment on the properties of carbon nanotubes (CNTs) which are used as flexible transparent electrodes. The CNTs are deposited on PET (polyethylene terephthalate) substrates using a spray coating method. Prior to the deposition of CNTs, the PET substrates are corona-treated by varying the feeding directions of the PET substrate and the numbers of treatments. The variations in the surface morphologies and roughnesses of the PET substrates due to corona-treatment are characterized via atomic force microscopy (AFM). Dynamic contact angles (DCAs) of the corona-treated PET substrates are measured and analyzed as functions of the treatment conditions. Also, the sheet resistances and visible-range transmittances of the CNTs deposited on PET substrates are measured before and after bending test. The experimental results obtained in this study provide strong evidences that the adhesive forces between CNTs and PET substrates can be substantially enhanced by corona-discharge pretreatment.

Pulsed-DC 스퍼터링에서 Reverse Pulse Time에 따른 AZO 박막의 특성 변화에 관한 연구 (A Study on the Dependency of Pulsed-DC Sputtered Aluminum-doped Zinc Oxide Thin Films on the Reverse Pulse Time)

  • 류형석;조진건;권상직;조의식
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.32-36
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    • 2018
  • For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

리소그래피 없이 제작된 그물망 구조의 은나노와이어-고분자화합물 복합소재 기반 유연 투명전극의 특성 (Characteristics of a Flexible Transparent Electrode based on a Silver Nanowire-polymer Composite Material with a Mesh Pattern Formed without Lithography)

  • 박태곤;박종설;박진석
    • 반도체디스플레이기술학회지
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    • 제19권4호
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    • pp.11-17
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    • 2020
  • In this study, a new method for fabricating flexible transparent electrodes based on silver nanowire-polymer (AgNW-PEDOT:PSS) composite materials having a mesh pattern formed by a solution-based process without lithography was proposed. By optimizing conditions such as the amount of ultraviolet (UV) photosensitizer injected into the suspension of AgNW and PEDOT:PSS, UV exposure time, and deionized (DI) washing time, a clear and uniform mesh pattern was obtained. For the fabricated AgNW-PEDOT:PSS-based mesh-type electrodes, characteristics such as electrical sheet resistance, light transmittance, haze, and bending flexibility were analyzed according to the mixing ratio of AgNW and PEDOT:PSS included in the suspension. The fabricated mesh electrodes typically exhibited a low electrical sheet resistance of less than 20 Ω/sq while maintaining a high transmittance of 80% or more. In addition, it was confirmed from the results of analyzing the effect of PEDOT:PSS on the characteristics of the mesh-type AgNW-PEDOT electrode that the optical visibility was greatly enhanced by reducing the surface roughness and haze, and the bending flexibility was remarkably improved.

SOD 온도 가변을 이용한 결정질 태양전지 특성 연구 (A study on property of crystalline silicon solar cell for variable annealing temperature of SOD)

  • 송규완;장주연;이준신
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.124.1-124.1
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    • 2011
  • 결정질 태양전지에서 도핑(Doping)은 반도체(Semiconductor)의 PN 접합(Junction)을 형성하는 중요한 역할을 한다. 도핑은 반도체에 불순물(Dopant)을 주입하는 공정으로 고온에서 진행되며 온도는 중요한 변수(Parameter)로 작용한다. 본 연구에서는 여러 가지 도핑 방법 중 SOD(Spin-On Dopant)를 이용하여 온도에 따른 도핑 결과와 특성을 분석 하였다. P-type 웨이퍼(Wafer)에 SOD를 이용하여 불순물을 증착 후 Hot-plate에서 15분간 Baking 하였다. Baking된 웨이퍼는 노(Furnace)에 넣고 $860^{\circ}C{\sim}880^{\circ}C$까지 $10^{\circ}C$씩 가변하였다. 각각의 조건에 대해 Lifetime과 Sheet Resistance을 측정하였고, 그 결과 $880^{\circ}C$에서의 Lifetime이 $23.58{\mu}s$$860^{\circ}C$에 비해 235.8% 증가하여 가장 우수 하였으며, Sheet Resistance 또한 $68{\Omega}$/sq로 $860^{\circ}C$에서 가장 우수하게 측정되었다. SOD의 속도 가변에 따른 특성 변화를 보기 위해 온도는 $880^{\circ}C$에 고정한 후 속도를 3000rpm~4500rpm까지 500rpm간격으로 1시간동안 실험한 결과 rpm 속도에 따른 lifetime 변화는 거의 없었으며, Sheet Resistance는 3000rpm에서 $63{\Omega}$/sq로 가장 우수 하였다. 본 연구를 통해 온도와 Spin rpm에 따른 특성을 확인한 결과 온도가 높을 때 Sheet Resistance가 가장 안정화 되며, lifetime이 더욱 우수한 것을 확인할 수 있었다.

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전력케이블용 가교 폴리에칠렌과 반도재료의 전기적 특성 (Electrical Characteristics of XLPE/Semicinductor Sheet for Power Cables)

  • 백광현;이경용;이관우;최용성;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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    • pp.142-145
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    • 2004
  • In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. studied effect for impurities and water for semiconductive shied through a dielectric properties experiment to estimate performance of insulating material in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 52/42 pF and $7.4{\times}10^{-4}$, $2.1510^{-4}$, respectively. In these results, the trend was increased with the increase of temperature. The $tan{\delta}$ of XLPE/semiconductive layer and XLPE/water/semiconductive layer were increased as compared with that of XLPE. dielectric properties reliability of $tan{\delta}$ was small.

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Ni-Pd 합금 전해도금의 특성에 관한 연구 (A Study on Characteristics of the Ni-Pd Alloy Electroplating)

  • 조은상;정대곤;조진기
    • 한국표면공학회지
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    • 제48권6호
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    • pp.253-259
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    • 2015
  • The test equipment becomes more important with the development of semiconductor industry. MEMS probe is an important testing component to detect the defects from the generated electric signal when it contacts the metal pad of semiconductor devices. Ni-Pd alloy has been paid attention to as a candidate of MEMS probe material because of its high surface hardness and relatively low resistivity. In this study, electroplated Ni-Pd alloy has been prepared by using ethylene diamine as a complexing agent. Solid solution alloy coating could be formed when concentration of palladium chloride and current density were in the ranges of 1~5 mM and $0.2{\sim}1.5A/dm^2$, respectively. The increase of current density brought about an decrease in palladium content, which made both of lattice parameter and grain size smaller. As a result of grain refinement, high hardness could be obtained. However, surface cracking was observed due to residual stress when the current density was above $1.3A/dm^2$. When effects of heat treatment temperature on hardness and sheet resistance were investigated, the accompanied grain growth decreased both of them. The decrease of hardness remained stable at a temperature of $200^{\circ}C$. The sheet resistance was drastically reduced at $100^{\circ}C$. After that, it was found to become constant.

Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al2O3 패시베이션 효과 (Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure)

  • 김정진;안호균;배성범;박영락;임종원;문재경;고상춘;심규환;양전욱
    • 한국전기전자재료학회논문지
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    • 제25권11호
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    • pp.862-866
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    • 2012
  • Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

Evaluation of Hazardous Chemicals with Material Safety Data Sheet and By-products of a Photoresist Used in the Semiconductor-Manufacturing Industry

  • Jang, Miyeon;Yoon, Chungsik;Park, Jihoon;Kwon, Ohhun
    • Safety and Health at Work
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    • 제10권1호
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    • pp.114-121
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    • 2019
  • Background: The photolithography process in the semiconductor industry uses various chemicals with little information on their constitution. This study aimed to identify the chemical constituents of photoresist (PR) products and their by-products and to compare these constituents with material safety data sheets (MSDSs) and analytical results. Methods: A total of 51 PRs with 48 MSDSs were collected. Analysis consisted of two parts: First, the constituents of the chemical products were identified and analyzed using MSDS data; second, for verification of the by-products of PR, volatile organic compounds were analyzed. The chemical constituents were categorized according to hazards. Results: Forty-five of 48 products contained trade secrets in amounts ranging from 1 to 65%. A total of 238 ingredients with multiple counting (35 ingredients without multiple counting) were identified in the MSDS data, and 48.7% of ingredients were labeled as trade secrets under the Korea Occupational Safety and Health Act. The concordance rate between the MSDS data and the analytical result was 41.7%. The by-product analysis identified 129 chemicals classified according to Chemical Abstracts Service No., with 17 chemicals that are carcinogenic, mutagenic, and reprotoxic substances. Formaldehyde was found to be released from 12 of 21 products that use novolak resin. Conclusion: We confirmed that several PRs contain carcinogens, and some were not specified in the toxicological information in the MSDS. Hazardous chemicals, including benzene and formaldehyde, are released from PRs products as by-products. Therefore, it is necessary to establish a systematic management system for chemical compounds and the working environment.