• Journal of Ceramic Processing Research
• /
• v.23 no.2
• /
• pp.165-170
• /
• 2022

Using electromagnetic shielding technology, the exterior walls of buildings can prevent the penetration of electromagnetic waves. This effectively reduces the electromagnetic field intensity and electromagnetic pulse inside buildings. Therefore, in recent years, researchers have focused on developing electromagnetic shielding technology. In this study, we analyzed the physical properties and EMP shielding efficiency of shielding materials, such as silicon carbide (SiC), obtained as a byproduct of the semiconductor manufacturing processes, and graphite mixed with mortar, used in the external walls. The shielding materials underwent pretreatment, such as grinding, before mixing them with mortar. Because shielding materials are expensive, the shielding efficiency was calculated by mixing the respective shielding materials with mortar in only the outermost 10% of the sample mortar volume. Moreover, we calculated the shielding efficiency of the different samples of mortar with shielding materials throughout the volume of the samples using shielding effectiveness (SE) estimation formula. The predicted SE values of the samples of mortar mixed with granular SiC, graphite powder, and SiC powder were 20 dB, 18 dB, and 28 dB, respectively. The SE of the sample of mortar mixed with SiC powder is approximately equal to 30 dB, that is, the maximum shielding efficiency (99.9%).

• Archives of Metallurgy and Materials
• /
• v.66 no.3
• /
• pp.795-798
• /
• 2021

Molybdenum (Mo) is used to form a barrier layer for metal wiring in displays or semiconductor devices. Recently, researches have been continuously attempted to fabricate Mo sputtering targets through additive manufacturing. In this study, spherical Mo powders with an average particle size of about 37 um were manufactured by electrode induction melting gas atomization. Subsequently, Mo layer with a thickness of 0.25 mm was formed by direct energy deposition in which the scan speed was set as a variable. According to the change of the scan speed, pores or cracks were found in the Mo deposition layer. Mo layer deposited with scan speed of 600 mm/min has the hardness value of 324 Hv with a porosity of approximately 2%. We demonstrated that Mo layers with higher relative density and hardness can be formed with less effort through direct energy deposition compared to the conventional powder metallurgy.

• Fire Science and Engineering
• /
• v.26 no.5
• /
• pp.41-47
• /
• 2012

As a core process in the manufacture of state-of-the-art industrial technologies such as semiconductor and LCD, a clean room is the most important process which can affect the performance and quality of products drastically. Nevertheless, scientific research on comprehensive safety measures from a fire protection standpoint is not being carried out in Korea. This study aims to derive measures to improve smoke control systems by identifying performance and problems of smoke systems installed in clean rooms as an LCD manufacturing process and analyzing fire and evacuation simulations considering several scenarios. As a result of analysis of fires and smoke in a clean roomas an LCD manufacturing process, it is found to be necessary to stop air handling units through interlocking in case of a fire and exhaust smoke out of the room through the top of FAB in consideration of buoyancy of smoke. It is also found to be necessary to install quick response sprinkler heads and accessories to accelerate the response time, because the heat-accumulating performance of sprinkler heads decreases in this application. Despite its low density of dwelling due to the automation process, clean room is characterized by an array of complex production equipment and working environment requiring dustproof clothes, which makes it difficult to acquire evacuation safety performance. Thus, thorough control of danger factors in processes and periodic education and training are required. It is also necessary to establish a level of domestic technologies equivalent to the level of standards of advanced countries in fire protection.

• Journal of the Korean Wood Science and Technology
• /
• v.34 no.4
• /
• pp.22-30
• /
• 2006

The volatile organic compound (VOC) Analyzer is a portable device to measure the four main aromatic hydrocarbon gases: toluene, ethylbenzene, xylene and styrene. With the VOC Analyzer, a semiconductor gas sensor eliminates the need for the carrier gas which is required for conventional gas chromatographs. In addition, since the semiconductor gas sensor is supersensitive to gas components, it is not necessary to use a conventional gas concentrator or other complicated equipment. Compared with other measurement methods, the VOC analyzer is useful for measuring toluene, ethylbenzene, xylene and styrene in wood-based panel because of its ease in obtaining field results and repeating the test. The VOC Analyzer primarily measures four VOC in the air. In this study, we designed a test method of VOC measurement for particle board. A specimen was sealed in 3L polyester bag, after 96hours we could measure maximum VOC emission level that is a stabilized VOC Value. For easy, fast and economic testing of TVOC emission from wood-based panel, we developed the test method with the VOC Analyzer. The VOC Analyzer is expected to gain widespread use in the manufacturing field where a quick and easy test for VOC emission from wood-based panel is required. Furthermore, the VOC Analyzer promises to become an easier, faster and more economic technique than the currently used standard methods.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.19-25
• /
• 2011

The size reduction of the semiconductor chip and the improvement of the electrical performance have been enabled through the introduction of the Cu/Low-K process in modern electronic industries. However, Cu/Low-K has a disadvantage of the physical properties that is weaker than materials used for existing semiconductor manufacture process. It causes many problems in chip manufacturing and package processes. Especially, the delamination between the Cu layer and the low-K dielectric layer is a main defect after the temperature cycles. Since the Cu/Low-K layer is located on the top of the pad of the flip chip, the stress on the flip chip affects the Cu/Low-K layer directly. Therefore, it is needed to improve the underfill process or materials. Especially, it becomes very important to select the underfill to decrease the stress at the flip-chip and to protect the solder bump. We have solved the delamination problem in a 90 nm Cu/Low-K flip-chip package after the temperature cycle by selecting an appropriate underfill.

• Journal of the Korean Institute of Intelligent Systems
• /
• v.14 no.5
• /
• pp.648-654
• /
• 2004

The Mass Flow Controller(MFC) has become crucial in semiconductor manufacturing equipments. It is an important element because the quality and the yield of a semiconductor process are decided by the accurate flow control of gas. Therefore, the demand for implementing the high speed and the highly accurate control of MFCs has been increasing. It is hard to find an article of the control algorithm applied to MFCs. But, it is known that commercially available MFCs adopt PID control algorithms. Particularly, when the system detects the flow by way of heat transfer, the MFC control problem includes the slow response and the nonlinearity. In this paper, MFC control algorithm with a superior performance to the conventional PID algorithm is discussed and the superiority is demonstrated through the experiment. A fuzzy controller was utilized in order to compensate the nonlinearity and the slow response, and the performance is compared with that of an MFC currently available in the market. The control system, in this paper, consists of a personal computer, the data acquisition board and the control algorithm carried out by LabWindows/CVI program on the PC. In addition, a method of estimating the actual flow from the sensor output with the slow response is presented. In conclusion, according to the result of the experiment, the proposed algorithm shows better accuracy and is faster than the conventional controller.

• Applied Chemistry for Engineering
• /
• v.29 no.5
• /
• pp.510-518
• /
• 2018

Recently, lots of interests have been concentrated on the scrubber system that abates waste gases produced from semiconductor manufacturing processes. An effective design of the thermal decomposition reactor inside a scrubber system is significantly important since it is directly related to the removal performance of pollutants and overall stabilities. In the present study, a computational fluid dynamics (CFD) analysis was conducted to figure out the thermal and flow characteristics inside the reactor of wet scrubber. In order to verify the numerical method, the temperature at several monitoring points was compared to that of experimental results. Average error rates of 1.27~2.27% between both the results were achieved, and numerical results of the temperature distribution were in good agreement with the experimental data. By using the validated numerical method, the effect of the reactor geometry on the heat transfer rate was also taken into consideration. From the result, it was observed that the flow and temperature uniformity were significantly improved. Overall, our current study could provide useful information to identify the fluid behavior and thermal performance for various scrubber systems.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.6
• /
• pp.275-281
• /
• 2017

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

• Journal of the Korean Society of Safety
• /
• v.32 no.2
• /
• pp.34-37
• /
• 2017

In recent emerging industry, Display field becomes bigger and bigger, and also semiconductor technology becomes high density integration. In Flat Panel Display, there is an issue that electrostatic phenomenon results in fine dust adsorption as electrostatic capacity increases due to bigger size. Destruction of high integrated circuit and pattern deterioration occur in semiconductor and this causes the problem of weakening of thermal resistance. In order to solve this sort of electrostatic failure in this process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. X-ray Generating efficiency has an effect on soft X-ray Ionizer affects neutralizing performance. There exist variable factors such as type of anode, thickness, tube voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was measured according to target material thickness using MCNPX under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W), Gold(Au), Silver(Ag). At the result, Gold(Au) shows optimum efficiency. In Tube voltage 5 keV, optimal target thickness is $0.05{\mu}m$ and Largest energy of Light flux appears $2.22{\times}10^8$ x-ray flux. In Tube voltage 10 keV, optimal target Thickness is $0.18{\mu}m$ and Largest energy of Light flux appears $1.97{\times}10^9$ x-ray flux. In Tube voltage 15 keV, optimal target Thickness is $0.29{\mu}m$ and Largest energy of Light flux appears $4.59{\times}10^9$ x-ray flux.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.237.1-237.1
• /
• 2014

Etching is one of the most important steps in semiconductor manufacturing. In etch process control a critical task is to stop the etch process when the layer to be etched has been removed. If the etch process is allowed to continue beyond this time, the material gets over-etched and the lower layer is partially removed. On the other hand if the etch process is stopped too early, part of the layer to be etched still remains, called under-etched. Endpoint detection (EPD) is used to detect the most accurate time to stop the etch process in order to avoid over or under etch. The goal of this research is to develop a hardware and software system for EPD. The hardware consists of an Optical Plasma Monitor (OPM) sensor which is used to continuously monitor the plasma optical emission intensity during the etch process. The OPM software was developed to acquire and analyze the data to perform EPD. Our EPD algorithm is based on the following theory. As the etch process starts the plasma generated in the vacuum is added with the by-products from the etch reactions on the layer being etched. As the endpoint reaches and the layer gets completely removed the plasma constituents change gradually changing the optical intensity of the plasma. Although the change in optical intensity is not apparent, the difference in the plasma constituents when the endpoint has reached leaves a unique signature in the data gathered. Though not detectable in time domain, this signature could be obscured in the frequency spectrum of the data. By filtering and analysis of the changes in the frequency spectrum before and after the endpoint we could extract this signature. In order to do that, first, the EPD algorithm converts the time series signal into frequency domain. Next the noise in the frequency spectrum is removed to look for the useful frequency constituents of the data. Once these useful frequencies have been selected, they are monitored continuously in time and using a sub-algorithm the endpoint is detected when significant changes are observed in those signals. The experiment consisted of three kinds of etch processes; ashing, SiO2 on Si etch and metal on Si etch to develop and evaluate the EPD system.