• Title/Summary/Keyword: Semiconductor manufacturing

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Photoelectric Conversion Properties of Dye-sensitized Solar Cell in the Transparent Electrode of Textured-AZO/AZO/Glass (Textured-AZO/AZO/Glass 투명전극을 갖는 염료감응 태양전지의 광전변환 특성)

  • Xu, Bing;Park, Choon-Bae;Hoang, Geun-C.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.37-43
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    • 2012
  • We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of $3.079{\times}10^{-4}\;{\Omega}cm$ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.

Development of Process and Equipment for Roll-to-Roll convergence printing technology

  • Kim, Dong-Su;Bae, Seong-U;Kim, Chung-Hwan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.19.1-19.1
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    • 2010
  • The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

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A Study on DOE Method to Optimize the Process Parameters for Cu CMP (구리 CMP 공정변수 최적화를 위한 실험계획법(DOE) 연구)

  • Choi, Min-Ho;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.1
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    • pp.24-29
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    • 2005
  • Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.

CFD Analysis on the Flow Characteristics with Flow Coefficient in a PFA Lined Ball Valve for Different Opening Degrees (개폐각도에 따른 PFA 라이닝 볼밸브의 유동특성 및 유랑계수 전산해석)

  • Jeon, Hong-Pil;Kim, Dong-Yoel;Lee, Jong-Chul
    • The KSFM Journal of Fluid Machinery
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    • v.17 no.4
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    • pp.76-80
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    • 2014
  • PFA fluoropolymer lined technology revolutionized ball valve development and design decades ago and continues to be pivotal for many products and valve solutions in diverse industries and applications, such as chemical process, semiconductor/LCD manufacturing processes, pharmaceutical and others. Because of the extreme operating conditions such as high-temperature (${\sim}120^{\circ}C$) and high-pressure (~10 bar), the reliability of the valve is very important for minimizing in-line leakage and fugitive emissions of strong corrosive chemicals (hydrochloric acid, hydrofluoric acid, nitric acid, etc.) transported through the lines. In this study, we investigated the flow characteristics with flow coefficient in a PFA lined ball valve for different opening degrees using CFD analyses. The results should be the guidance for a new PFA lined ball valve design that will incorporate all the acclaimed and demonstrated benefits of the current design approaches.

An improved plasma model by optimizing neuron activation gradient (뉴런 활성화 경사 최적화를 이용한 개선된 플라즈마 모델)

  • 김병환;박성진
    • 제어로봇시스템학회:학술대회논문집
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    • 2000.10a
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    • pp.20-20
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    • 2000
  • Back-propagation neural network (BPNN) is the most prevalently used paradigm in modeling semiconductor manufacturing processes, which as a neuron activation function typically employs a bipolar or unipolar sigmoid function in either hidden and output layers. In this study, applicability of another linear function as a neuron activation function is investigated. The linear function was operated in combination with other sigmoid functions. Comparison revealed that a particular combination, the bipolar sigmoid function in hidden layer and the linear function in output layer, is found to be the best combination that yields the highest prediction accuracy. For BPNN with this combination, predictive performance once again optimized by incrementally adjusting the gradients respective to each function. A total of 121 combinations of gradients were examined and out of them one optimal set was determined. Predictive performance of the corresponding model were compared to non-optimized, revealing that optimized models are more accurate over non-optimized counterparts by an improvement of more than 30%. This demonstrates that the proposed gradient-optimized teaming for BPNN with a linear function in output layer is an effective means to construct plasma models. The plasma modeled is a hemispherical inductively coupled plasma, which was characterized by a 24 full factorial design. To validate models, another eight experiments were conducted. process variables that were varied in the design include source polver, pressure, position of chuck holder and chroline flow rate. Plasma attributes measured using Langmuir probe are electron density, electron temperature, and plasma potential.

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Control of Decoupled Type High Precision Dual-Servo (Decoupled Type의 초정밀 이중 서보의 제어에 관한 연구)

  • Nam Byoung-Uk;Kim Ki-Hyun;Choi Young-Man;Kim Jung-Jae;Lee Suk-Won;Gweon Dae-Gab
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.2 s.179
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    • pp.43-50
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    • 2006
  • Recently, with rapid development of semiconductor and flat panel display, the manufacturing equipments are required to have large travel range, high productivity, and high accuracy. In this paper, an ultra precision decoupled dual servo (DDS) system is proposed to meet these requirements. And a control scheme for the DDS is studied. The proposed DDS consists of a $XY{\Theta}$ fine stage for handling work-pieces precisely and a XY coarse stage for large travel range. The fine stage consists of four voice coil motors (VCM) and air bearing guides. The coarse stage consists of linear motors and air bearing guides. The DDS is mechanically decoupled between coarse stage and fine stage. Therefore, both stages must be controlled independently and the performance of the DDS is mainly determined by the fine stage. For high performance tracking, the controller of fine stage consists of time delay control (TDC) and perturbation observer while the controller of coarse stage is TDC alone. With these individual controllers, two kinds of dual-servo control strategies are suggested: master-slave type and parallel type. By simulations and experiments, the performances of two dual-servo control strategies are compared.

Nanophotonics of Hexagonal Lattice GaN Crystals Fabricated using an Electron Beam Nanolithography Process

  • Lee, In-Goo;Kim, Keun-Joo;Jeon, Sang-Cheol;Kim, Jin-Soo;Lee, Hee-Mok
    • International Journal of Precision Engineering and Manufacturing
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    • v.7 no.4
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    • pp.14-17
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    • 2006
  • A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

A Study on the Determination of Vibration Criteria for Vibration Sensitive Equipments Using Impact Test (충격시험을 이용한 고정밀장비의 진동허용규제치 결정기법에 관한 연구)

  • 이홍기;박해동;김두훈;김사수
    • Journal of KSNVE
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    • v.7 no.2
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    • pp.247-254
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    • 1997
  • In the case of a precision equipment, it requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga class semiconductor wafers. This high technology equipments require very strict environmental vibration standard in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria are usually obtained either by the real vibration exciting test on the equipment or by the analytical calculation. This paper proposes a new method to solve this problem at a time. The permissible vibration level to a precision equipment can be easily obtained by analyzing a process of Frequency Response Function. This paper also demonstrates its effectiveness by applying the proposed method to finding the vibration criteria of a Computer Hard Disk Driver by Impact Test.

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The Ion Generation Characteristics of Charge Neutralizer Applied a Pulse Voltage (펄스전압을 적용한 전하중화장치의 이온발생 특성)

  • Moon, Jae-Duk;Chung, Suk-Hwan
    • Journal of Sensor Science and Technology
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    • v.7 no.2
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    • pp.140-146
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    • 1998
  • Methods and systems to remove static electricity are requested necessarily because the static electricity causes a flammable gas explosion, a fire, reduction of production rate in manufacturing VLSI semiconductor device and so on. In this paper, abrasion and dust contaminant of needle electrode are studied experimentally. And, frequencies and pulse durations of a high frequency pulse source were controlled effectively to minimize the abrasion of needle electrode and control generated numbers of ions. As a result, it is verified experimentally that the ion generation of charge neutralizer increases by using a high frequency pulse source.

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Electrical and Optical Properties of Ga-doped SnO2 Thin Films Via Pulsed Laser Deposition

  • Sung, Chang-Hoon;Kim, Geun-Woo;Seo, Yong-Jun;Heo, Si-Nae;Huh, Seok-Hwan;Chang, Ji-Ho;Koo, Bon-Heun
    • Journal of Surface Science and Engineering
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    • v.44 no.4
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    • pp.144-148
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    • 2011
  • $Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.