• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.256-261
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• 2010

In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.47-51
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• 2022

With the innovative development of bio, pharmaceutical, and semiconductor technologies, it is essential to demand a next-generation transfer system that minimizes dust and vibrations generated during the manufacturing process. In order to develop dust-free and non-contact transfer systems, the high temperature superconductor (HTS) bulks have been applied as a magnet for levitation. However, sintered HTS bulk magnets are limited in their applications due to their relatively low critical current density (J_c) of several kA/cm² and low mechanical properties as a ceramic material. In addition, during cooling to cryogenic temperatures repeatedly, cracks and damage may occur by thermal shock. On the other hand, the bulk magnets made by stacked HTS tapes have various advantages, such as relatively high mechanical properties by alternate stacking of the metal and ceramic layer, high magnetic levitation performance by using coated conductors with high J_c of several MA/cm², consistent superconducting properties, miniaturization, light-weight, etc. In this study, we tried to fabricate HTS tapes stacked bulk magnets with 60 mm × 60 mm area and various numbers of HTS tape stacked layers for magnetic levitation. In order to examine the levitation forces of bulk magnets stacked with HTS tapes from 1 to 16 layers, specialized force measurement apparatus was made and adapted to measure the levitation force. By increasing the number of HTS tapes stacked layers, the levitation force of bulk magnet become larger. 16 HTS tapes stacked bulk magnets show promising levitation force of about 23.5 N, 6.538 kPa at 10 mm of levitated distance from NdFeB permanent magnet.

• Korean Journal of Optics and Photonics
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• v.33 no.1
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• pp.22-27
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• 2022

We fabricate a polarization-independent dielectric multilayer thin-film diffraction grating for a spectral-beam-combining (SBC) system with a simple grating structure and low aspect ratio. Due to the refractive index and thickness error of the manufactured thin films, the diffraction efficiency of the fabricated diffraction grating was lower than that of the design. The causes of the errors were analyzed, and it was confirmed through simulation that diffraction efficiency could be compensated through an additional coating on the manufactured diffraction grating. As a result of sputtering an additional Ta₂O₅ layer on a fabricated diffraction grating, the diffraction efficiency was corrected and a maximum 91.7% of polarization-independent diffraction efficiency was obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.173-173
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• 2000

Multilayered films (MLF) consisting of transition metals and semiconductors have drawn a great deal of interest because of their unique properties and potential technological applications. Fe/Si MLF are a particular topic of research due to their interesting antiferromagnetic coupling behavior. although a number of experimental works have been done to understand the mechanism of the interlayer coupling in this system, the results are controversial and it is not yet well understood how the formation of an iron silicide in the spacer layers affects the coupling. The interpretation of the coupling data had been hampered by the lack of knowledge about the intermixed iron silicide layer which has been variously hypothesized to be a metallic compound in the B2 structure or a semiconductor in the more complex B20 structure. It is well known that both magneto-optical (MO0 and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In order to understand the structure and physical properties of the interfacial regions, Fe/Si multilayers with very thin sublayers were investigated by the MO and optical spectroscopies. The Fe/si MLF were prepared by rf-sputtering onto glass substrates at room temperature with a totall thickness of about 100nm. The thicknesses of Fe and Si sublayers were varied from 0.3 to 0.8 nm. In order to understand the fully intermixed state, the MLF were also annealed at various temperatures. The structure and magnetic properties of Fe/Si MLF were investigated by x-ray diffraction and vibrating sample magnertometer, respectively. The MO and optical properties were measured at toom temperature in the 1.0-4.7 eV energy range. The results were analyzed in connection with the MO and optical properties of bulk and thin-film silicides with various structures and stoichiometries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.125-128
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• 2023

Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO₂ used as a gate oxide have occurred. In order to overcome the limitation of SiO₂, many studies have been conducted on HfO₂ that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO₂, and has an appropriate band gap. In this study, HfO₂, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO₂ thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.27-33
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• 2024

Al₂O₃ has excellent sintering properties and is important in semiconductor manufacturing processes that require high-temperature resistance and chemical inertness in a plasma environment. In this study, a comprehensive analysis of the chemical characteristics, physical properties, crystal structure, and dispersion stability of three commercially available Al₂O₃ powders was conducted. The aim was to provide a technological foundation for selecting and utilizing appropriate Al₂O₃ powders in practical applications. All powders exhibited α-Al₂O₃ as the main phase, with the presence of beta-phase Na₂O-11Al₂O₃ as the secondary phase. The highest Na⁺ ion leaching was observed in the aqueous slurry state due to the presence of the secondary phase. Although the average particle size difference among the three powders was not significant, distinct differences in particle size distribution were observed. ALG-1SH showed a broad particle size distribution, P162 exhibited a bimodal distribution, and AES-11 displayed a uniform unimodal distribution. High-concentration Al₂O₃ slurries showed differences in viscosity due to ion release when no dispersant was added, affecting the electrical double-layer thickness. Polycarboxylate was found to effectively enhance the dispersion stability of all three powders. In the dispersion stability analysis, ALG-1SH exhibited the slowest sedimentation tendency, as evidenced by the low TSI value, while P162 showed faster precipitation, influenced by the particle size distribution.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.202-207
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• 2024

In this study, we undertook detailed experiments to increase hydrogen production efficiency by optimizing the thickness of titanium dioxide (TiO₂) thin films. TiO₂ films were deposited on p-type silicon (Si) wafers using atomic layer deposition (ALD) technology. The main goal was to identify the optimal thickness of TiO₂ film that would maximize hydrogen production efficiency while maintaining stable operating conditions. The photoelectrochemical (PEC) properties of the TiO₂ films of different thicknesses were evaluated using open circuit potential (OCP) and linear sweep voltammetry (LSV) analysis. These techniques play a pivotal role in evaluating the electrochemical behavior and photoactivity of semiconductor materials in PEC systems. Our results showed photovoltage tended to improve with increasing thickness of TiO₂ deposition. However, this improvement was observed to plateau and eventually decline when the thickness exceeded 1.5 nm, showing a correlation between charge transfer efficiency and tunneling. On the other hand, LSV analysis showed bare Si had the greatest efficiency, and that the deposition of TiO₂ caused a positive change in the formation of photovoltage, but was not optimal. We show that oxide tunneling-capable TiO₂ film thicknesses of 1~2 nm have the potential to improve the efficiency of PEC hydrogen production systems. This study not only reveals the complex relationship between film thickness and PEC performance, but also enabled greater efficiency and set a benchmark for future research aimed at developing sustainable hydrogen production technologies.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.245-249
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• 2013

The $HfO_X$ thin film was deposited what it has been paid attention to the next generation oxide thin layer of MOSFET (metal-Oxide semiconductor field-effect-transistor) by rf magnetron sputter on Si (100) substrate. The $HfO_X$ thin film was deposited using a various oxygen gas flows (5, 10, 15 sccm). After deposition, $HfO_X$ thin films were annealed from 400 to $800^{\circ}C$ for 20 min in nitrogen ambient. The electrical characteristics of the $HfO_X$ thin film was improved by leakage current properties, depending on the increase of oxygen gas flow and annealing temperature. In particular, the properties of nano-mechanics of $HfO_X$ thin films were measured by AFM and Nano-indenter. From the results, the maximum indentation depth at the basis of maximum indentation force was increased from 24.9 to 38.8 nm according to increase the annealing temperature. Especially, the indentation depth was increased rapidly at $800^{\circ}C$. The rapid increasement of indentation depth was expected to be due to the change of residual stress in the $HfO_X$ thin film, and this result was caused by relative flux of oxygen outgasing during the annealing process.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.34 no.4
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• pp.269-274
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• 2008

In this study we successfully altered the structural characteristics of the mica surface and were able to control oil-absorption by using the microwave enhanced etching (MEE) technique, which has originally been used in semiconductor industry. When microwave energy is applied to the mica, the surface of the mica is etched in a few minutes. As the result of etching, oil-absorption of the mica was enhanced and surface whiteness was improved by modifying the silicon dioxide layer. Additionally, the high whiteness was maintained even though the etched mica absorbed the sebum or sweat. The surface modification of mica was performed by microwave irradiation after the treatment of hydrofluoric acid. The degree of etching was regulated by acid concentration, irradiation time, the amount of energy and slurry concentration. The surface morphology of the etched mica appears to be the shape of the 'Moon'. The characteristics of surface area and roughness were examined by Brunauer-Emmett-Teller (BET) surface area analysis, atomic force microscopy (AFM), scanning electron microscopy (SEM), spectrophotometer and goniophotometer.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.56-62
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• 1999

All the cells on the whole memory array or a block of the memory array in the Flash EEPROM's are erased at the same time using Fowler-Nordheim (FN) tunneling. some of the cels are often overerased since the tunneling is not a self-limited process. In this paper, the optimum doping concentration of the floating gate solve the overerase problem has been studied. For these studies, N-type MOSFETs and MOS capacitors with various doping concentrations of the gate polysilicon have been fabricated and their electrical characteristics have been measured and analyzed. As the results of the experiment, it has been found that the overerase problem can be prevented if the doping concentration of the floating gate is low enough (i.e. below $1.3{\times}10^{18}/cm^3$). It is because the potential difference between the floating gate and the source is lowered due to the formation of the depletion layer in the floating gate and thus the erasing operation stops by itself after most of the electrons stored in the floating gate are extracted. On the other hand, the uniformity of the Vt and the gm has been significantly poor if the coping concentration of the floating, gate is too much lowered (i.e. below $1.3{\times}10^{17}/cm^3$), which is believed to be due to nonuniform loss of the dopants from the nonuniform segregation in the floating gate. Consequently, the optimum doping concentration of the floating gate to suppress the overerase problem and get the uniform Vt and has been found to range from $1.3{\times}10^{17}/cm^3$ to $1.3{\times}10^{18}/cm^3$ in the Flash EEPROM.