• Title/Summary/Keyword: Semiconductor laser

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Modal Transmission-Line Theory to Design Circular Grating Filters for Optical Communication (광통신용 원통형 격자필터 설계를 위한 모드 전송선로 이론)

  • 호광춘;박천관
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.4
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    • pp.27-33
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    • 2003
  • Circular Distributed-feedback (DFB) guiding structures can be incorporated in most of the semiconductor laser devices because of the frequency-selective property applicable as an optical filter in optical communications. In this paper, we present a novel and simple modal transmission-line theory (MTLT) using Floquet-Babinet's principle to analyze the optical filtering characteristics of Bragg gratings with cylindrical profile. The numerical results reveal that this method offers a simple and convenient algorithm to analyze the filtering characteristics of circular DFB configurations as well as is extended conveniently to evaluate the guiding problems of circular multi-layered periodic structures.

Design, Fabrication and Frequency Analysis of Transmitter Optical Sub-assembly for a 10 Gb/s XFP Transceiver (10 Gb/s XFP Transceiver용 Transmitter Optical Sub-assembly(TOSA)의 RF 설계/제작 및 주파수 특성 해석)

  • 김동철;심종인;박문규;어영선
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.349-354
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    • 2004
  • As a transmitter sub-assembly in the XFP(10 Gb/s Small Form Factor Pluggable) transceiver module, a transmitter optical sub-assembly(TOSA) is designed, fabricated and characterized in view of electrical and thermal performances. For a low-cost and compact packaging TOSA, the bias-tee and the matching resistor are monolithically integrated on the AlN sub-mount and a newly designed coplanar waveguide is drawn in the TO-stem. All optoelectronic components packaged in the TOSA are modeled by the equivalent circuit, which helps to improve and characterize the TOSA performance. The fabricated TOSA shows the -3㏈ bandwidth as high as 11 GHz at an elevated temperature of 85$^{\circ}C$.

Characterization of amplified spontaneous emission light source from an $Er^{3+}$/$Tm^{3+}$co-doped silica fiber ($Er^{3+}$$Tm^{3+}$이 복합 첨가된 실리카 광섬유의 ASE 광원에 대한 특성 평가)

  • Jeong, Hoon;Oh, K.
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.96-97
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    • 2000
  • Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

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Gallium Nitride Nanoparticle Synthesis Using Non-thermal Plasma with N2 Gas

  • Yu, Gwang-Ho;Kim, Jeong-Hyeong;Yu, Sin-Jae;Ryu, Hyeon;Seong, Dae-Jin;Sin, Yong-Hyeon;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.236.1-236.1
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    • 2014
  • Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

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Fabrication and Characterization of Electro-photonic Performance of Nanopatterned Organic Optoelectronics

  • Nil, Ri-Swi;Han, Ji-Yeong;Gwon, Hyeon-Geun;Lee, Gyu-Tae;Go, Du-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.134.2-134.2
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    • 2014
  • Photonic crystal solar cells have the potential for addressing the disparate length scales in polymer photovoltaic materials, thereby confronting the major challenge in solar cell technology: efficiency. One must achieve simultaneously an efficient absorption of photons with effective carrier extraction. Unfortunately the two processes have opposing requirements. Efficient absorption of light calls for thicker PV active layers whereas carrier transport always benefits from thinner ones, and this dichotomy is at the heart of an efficiency/cost conundrum that has kept solar energy expensive relative to fossil fuels. This dichotomy persists over the entire solar spectrum but increasingly so near a semiconductor's band edge where absorption is weak. We report a 2-D, photonic crystal morphology that enhances the efficiency of organic photovoltaic cells relative to conventional planar cells. The morphology is developed by patterning an organic photoactive bulk heterojunction blend of Poly(3-(2-methyl-2-hexylcarboxylate) thiophene-co-thiophene) and PCBM via PRINT, a nano-embossing method that lends itself to large area fabrication of nanostructures. The photonic crystal cell morphology increases photocurrents generally, and particularly through the excitation of resonant modes near the band edge of the organic PV material. The device performance of the photonic crystal cell showed a nearly doubled increase in efficiency relative to conventional planar cell designs. Photonic crystals can also enhance performance of other optoelectronic devices including organic laser.

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Simulation and evaluation of fiber optics for hand-piece using ray tracing method (광선추적법을 이용한 핸드피스용 광섬유 광학계 시뮬레이션 및 특성 평가)

  • Park, J.H.;Kim, H.;Yang, B.C.;Lee, B.H.;Yoo, Y.J.;Kim, D.W.;Lee, C.W.;Lee, C.W.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1962-1963
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    • 2002
  • The hand-piece fiber optics is applied to medical appliances such as glaucoma theraphy to focus semiconductor laser on the affected parts efficiently. In this paper, we evaluate optical properties such as beam power and radius of a hand-piece probe by experiments and we also simulate the hand-piece optics by ray tracing method in order to study major parameters to optimize focalization ability. As results, we show experimental and simulation results of the hand-piece optics and also summarize several requirements that have to be considered in optimizing the hand-piece optics.

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Heteroepitaxial Structure of ZnO Films Deposited on Graphene, $SiO_2$ and Si Substrates

  • Pak, Sang-Woo;Cho, Seong-Gook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.309-309
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    • 2012
  • Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

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Analysis of the Structural Properties for ZnO/Sapphire(0001) Thin Films by In-situ Atmosphere Annealing (In-situ 분위기 Annealing에 따른 ZnO/Sapphire(0001) 박막의 구조적 특성 분석)

  • Wang Min-Sung;Yoo In-Sung;Park Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.769-774
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    • 2006
  • In this paper the ZnO thin films, which has used spotlight of next generation short wavelength LEDs and semiconductor laser were deposited based on RF magnetron sputtering is described. The temperature at substrate and work pressure, which has implemented in sputtering process of ZnO thin films were settle down at $100^{\circ}C$ and 15 mTorr respectively. The ZnO 5N has used target. The thickness of ZnO thin films was about $1.6{\mu}m$ which was measured by SEM analysis after the sputtering process. Structural properties of ZnO thin films by in-situ and atmosphere annealing were analyzed by XRD. Transformation of grain size and surface roughness were observed by AFM. XPS spectra showed that ZnO thin film had a peak positions corresponding to the $Zn_{2p}$ and the $O_{1s}$. As form above XPS, we confirmed that post-annealing condition changed the atom ratio of Zn/O and microstructure in ZnO thin films.

A Simple Analytic Method for Design of Optical Circular Grating Filters with Phase-Shifting Region (천이영역을 갖는 원통형 격자필터 설계를 위한 간단한 해석적 방법)

  • Ho, Kwang-Chun
    • Korean Journal of Optics and Photonics
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    • v.17 no.3
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    • pp.209-215
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    • 2006
  • Circular Bragg gratings(CBGs) canbe incorporated in most of the semiconductor laser devices because of the frequency-selective property applicable as an optical narrowband-pass filter in DWDM optical communications. In this paper, the optical filtering characteristics of CBGs are evaluated by a novel and simple analytic modal transmission-line theory(MTLT), which is based on Floquet-Babinet's principle. The numerical results reveal that this method offers a simple and convenient algorithm to analyze the filtering characteristics of CBGs as well as is extended conveniently to evaluate the guiding problems of circular multi-layered periodic structures.

Characterization of Al-doped ZnO Thin Films by Atomic Layer Deposition (원자층 증착법으로 증착한 Al을 도핑한 ZnO 박막의 특성평가)

  • Shin, Woong-Chul;Choi, Kyu-Jeong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.175-175
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    • 2008
  • 투명전극으로 사용되고 있는 Indium tin oxide (ITO) 박막은 전기적 전도도와 기판과의 접확성, 화학적 안정성, 광투과율 등의 특성과 함께 우수한 전기 광학적 거동을 보이고 있다. 그러나 ITO는 고가의 재료이기 때문에 대체 투명전극으로 Al을 도핑한 ZnO 박막의 연구가 활발히 진행되고 있다. ZnO:Al 박막은 chemical vapor deposition, reactive magnetron sputtering, electron-beam evaporation, pulsed laser deposition 등의 당양한 방법을 이용하여 증착하였다. 그러나 최근 낮은 온도에서 대면적의 균일성과 우수한 특성 때문에 atomic layer depositon (ALD) 방법을 이용하여 많은 연구가 진행되고 있으며, 이런 투명전극은 태양전지를 위해 연구되어지고 있다. 따라서 본 연구에서는 ALD 방법으로 Al의 도핑 양을 조절하여, ZnO:Al 박막을 제조하여 그 특성을 평가하고, 또한 ZnO TFT를 제작하여 발표하고자 한다. ZnO와 ZnO:Al 박막은 실리콘과 유리 기판 위에 ALD (Lucida-D200, NCD Technology) 장치로 증착하였다. DEZn, TMA, $H_2O$는 ZnO와 ZnO:Al 박막을 증착하기 위한 전구체와 반응가스로 사용하였다. 증착된 박막은 XRD와 HRTEM을 이용하여 결정구조와 미세구조를 분석하였다. AFM과 4-point probe를 이용하여 증착된 박막의 표면 거칠기와 면저항을 관찰하였다. semiconductor parameter 분석기를 이용하여 제작된 ZnO TFT를 평가하였다.

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