• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.273-275
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• 2003

본 실험은 고출력 반도체 레이저의 p-side-down 마운팅용 솔더로서 AuSn 합금 솔더(80wt%:20wt%)의 적합성에 대해 연구하였다. $1{\mu}m$이하의 균일도로 폴리싱 된 Cu heat sink의 표면에 두께 $1{\mu}m$의 Ni로 코팅을 한다음, AuSn 다층박막은 e-beam 증착기로 AuSn 합금 솔더는 열증착기로 각각 증착하였다. 열처리는 산화 방지를 위해 $N_2$ 분위기에서 행하였으며, 동일한 압력으로 마운팅을 하였다. 표면의 거칠기와 형상은 AFM(Atomic Force Microscope)과 SEM(Scanning Electron Microscopy)으로 그리고 Au와 Sn의 성분비는 AES(Auger Electron Spectroscopy) 로 비교하였다. 또한 CW(연속발진)을 통한 L-I(Light-Current)측정을 통해 본딩상태를 비교하였다.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.156-159
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• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.437-441
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• 1995

In this paper, the ultra precision positioning system for servo motor and piezo actuator using dual servo loop control has been developed. For positioning system having long distance with ultra precision, the combination of global stage and micro stage is required. Servo moter and ball screw are used as a master stage and piezo acuator as a fine stage. By using this system, an positional precision witin .+-. 30nm has been achieved at dual servo loop control. When using micro stage, an positional precision within .+-. 10nm has been achieved. This result can be applied to develop semiconductor equipment such as wafer stepper.

• 한국진공학회지
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• 제8권4B호
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• pp.530-535
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• 1999

W made a near-field optical microscope(NSOM) apparatus and evaluated it. To control the distance between a tip and a sample, we used a piezoelectric translator and a He-Ne laser, and consequently obtained the spatial resolution better than 100nm. For the semiconductor spectroscopic applications, we performed photoluminescence and photocurrent experiments on the GaAs/AlGaAs MQWs samples. In the case of PL experiment, we obtained the low signal to nose ration due to the extremely small power of a light source passing through the nanometric optical fiber tip. However photocurrent experiment shows a hundred times better signal to noise than that of PL experiment. This suggests that photocurrent experiment using NSOM have the possibility to provide the spatial resolution better than 10nm.

• 한국통신학회논문지
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• 제10권4호
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• pp.168-174
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• 1985

半導體 레이저의 出力 및 波長은 溫度에 대단히 敏感하다. 특히 헤테로다인光通信 씨스템이다. 光學用積密 度量衡器, 高分解能 스텍트로스코프 等測量 및 通信에서 發光源으로 使用하기 爲해서는 適當한 安定化 技術이 要求된다. 이 때 溫度의 安定은 絶對的이다 .따라서 本 硏究에서는 桓溫器의 溫度를 -27$-50^{\circ}$에서 +73$^{\circ}C$까지 임의 設定이 可能하게 하였으며 溫度 安定은 ${\pm}2m{\circ}K$보다 좋은 結果를 얻었다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1992년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 19-21 Oct. 1992
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• pp.394-398
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• 1992

The measurable speed range of the self-mixing type semiconductor laser range finder has been greatly improved by employing a new processing circuit. Using this range finder as an external finder of a single lens reflex (SLR) autofocus (AF) camera, some clear photographs of an object moving at a medium speed of 20 mm/s is obtained.

• 한국광학회지
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• 제10권6호
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• pp.524-526
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• 1999

본 논문에서는 외부 공진기 반도체 링 레이저 내부에 에탈론을 삽입함으로써 외부 공진기 링 레이저의 종모드 간격이 현저히 변화하는 사실을 관측하고 이에 대한 이론적 분석을 수행하였다. 외부공진기 링 레이저의 종 모드 간격은 에탈론의 단면 반사율에 의존하여 변화하였으며, 공진모드의 분석을 통해 이에 대한 정량적인 해석을 보였다. 또한 이러한 효과가 에탈론이나 FP 필터의 단면 반사율의 정밀한 측정에 응용될 수 있다는 것을 실험을 통해 증명하였다. 제안된 방법은 특히 높은 반사율에 대해서도 정밀한 측정결과를 얻을 수 있으며 측정이 쉽고 매우 빠르게 이루어진다.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.224-225
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• 2000

Transparent and hard materials such as sapphire are used for many industrial applications as optical windows, hard materials on mechanical contact against abrasion, and substrate materials for opto-electronic semiconductor devices such as blue LED and blue LD etc. The materials should be cut along the proper shapes possible to be used for each application. In case of blue LED, the blue LED wafer should be cut to thousands of blue LED pieces at the final stage of the manufacturing process. The process of cutting the wafer is usually divided into two steps. The wafer is scribed along the proper shapes in the first step. It is inserted between transparent flexible sheets for easy handling. And then, it is broken and split in the next step. Harder materials such as diamonds are usually used to scribe the wafer, while it has a problem of low depth of scribing and abrasion of the harder material itself. The low depth of scribing can induce failure in breaking the wafer along the scribed line. It was also known that the expensive diamond tip should be replaced frequently for the abrasion. (omitted)

• 한국소음진동공학회논문집
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• 제12권1호
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• pp.65-72
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• 2002

Generally, there are laser operating equipments( aligner, stepper) and electronic microscope( SEM, TEM) as a high precision manufacturing and inspection equipment in semiconductor production companies, precision examination and measuring laboratories. Mostly, these equipments are characterized by projection and target part. The relative displacements between projection and target part are dominant roles in vibrational problem in these precision equipments. These relative displacements are determined by the position of incoming vibration and the difference of vibration response in projection and target part. In this study, the allowable vibrational limits are suggested and the vibrational reduction plans are proposed by measurement and analysis of vibration phenomenon in the Clean Room in PDP(plasma display panel) production building. The vibration performance is evaluated by comparison relative displacements between projection and target part before/after the vibration isolation plan.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.