• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.225-226
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• 2007

In the semiconductor manufacturing industry, the heterodyne laser interferometer plays as an ultra-precise measurement system. However, the heterodyne laser interferometer has some unwanted environmental error which is caused from refraction in the air. This is an obstacle to improve the measurement accuracy in nanometer scale. In this paper we propose a compensation algorithm based on Data Fusion method which reduces the environmental error in the heterodyne laser interferometer. Through some experiments, we demonstrate the effectiveness of the proposed algorithm in measurement accuracy.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.161-165
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• 2003

Optical 60 ㎓ millimeter-wave (MMW) signal generation is demonstrated using the sideband injection-locking method in the master/slave configuration, where two slave lasers are locked to two among several side-bands produced by the direct rf-modulation of a master laser. These two locked slave laser outputs beat against each other in the photo-detector and produce stable and very pure 60 ㎓ signals.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1277-1279
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• 1993

As a highly information-oriented society developes, various kinds of amorphous semiconductor devices, such as solar cells, electrographic printers, image sensors, and flat-panel televisions, have been developed as man/machine interfaces. This paper proposed the laser CVD techniques to deposit hydrogenated amorphous silicon thin film on glass or dielectric substrate at low temperatures. Varying the deposition conditions, we examined optical and electrical charateristics of a-Si:H film deposited by Laser CVD.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.21-26
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• 2000

This paper describes a positioning system for ultra-precision that will be utilized in semiconductor manufacturing field and precision machinery. This system is composed with laser scale unit with 10nm resolution, ball screw with LM guide, brushless DC servo motor, vibration isolator and is equipped in chamber for continuous measuring environment. The dynamic of table, the problem of servo control and the traceability for micro step motion are described. These data will be applied for getting more stable system with 50nm resolution.

• Journal of the Optical Society of Korea
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• v.14 no.1
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• pp.38-41
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• 2010

We design and fabricate a widely tunable laser diode made of InGaAsP-InP. The diode is monolithically integrated with a wavelength-selective coupled-ring reflector and semiconductor amplifiers. For realization of a compact size device, deeply etched multi-mode interference couplers and square ring resonators composed of total-internal-reflection mirrors are adopted and fabricated using a self-aligned process. It is demonstrated that the laser diode exhibits single mode operation and 16 nm tuning range with side-mode-suppression-ratio exceeding 20 dB.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.15-20
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• 2002

We demonstrate a widely-tunable wavelength converter based on four-wave mixing in a semiconductor-fiber ring laser with no external pump light. Applying 10 GHz short pulses at -8 dBm as a probe signal, we achieve continuous wavelength tuning over the semiconductor optical amplifier gain-bandwidth reaching 30 nm down- and 17 m up-wavelength conversion. In addition to the wide tuning capability, the converter shows high-speed conversion and low saturation power capabilities.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.3
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• pp.478-485
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• 2021

An injection locking technology of a semiconductor laser is a promising technology to generate optical complex signals by adjusting optical injection parameters. The extraction of the precise injection parameters plays a key role in the generation of the optical complex signal. Rate equations of semiconductor lasers under optical injection are commonly used to map the injection parameters and the corresponding optical complex signal. The accuracy of the generated optical complex signal on the injection parameters is limited since the rate equations require a locking map-based interpolation method. We propose a novel analytic method, namely rate equation-based direct extraction method, to directly calculate the injection parameters without relying on the locking map-based interpolation method. We achieved 103-times improvement of the signal accuracy by using the proposed method compared to locking-map based interpolation method.

• Korean Journal of Acupuncture
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• v.28 no.3
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• pp.1-12
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• 2011

Objectives : The purpose of this study is to review laser acupuncture studies to find possibility for applying high intensity laser to acupuncture and moxibustion treatment. Methods : Searching papers was performed using search engines of five electronic databases, including Pubmed, Thomson ISI, EMBASE, Sciencedirect, and EBSCO, from inception to May 2011 without language limitation. Inclusion criteria were clinical studies with human, randomized controlled trials (RCTs), case-control studies, and case reports. Selecting papers was performed with titles and abstracts in first step, scrutinize full text in second step, and then the extrated data was analyzed by two authors independently. The methodological quality for RCTs was evaluated using Jadad's scale. Results : Total 8 papers, (3 RCTs, 5 controlld studies, and 1 case reports), were finally selected. The study dealt with surgical laser, argon and $CO_2$ laser was one for each, with GaAs laser was two, and with new semiconductor laser, GaN, were four. The output range was from 110 mW to 15 W. The study diseases were alcohol addiction, knee osteoarthritis, bronchopneumonia and asthma for children, and circulation. All studies reported positive effect. The methodological quality in all RCTs was low because of below 3 points and all studies had few subject numbers. Conclusions : We suggest that high intensity laser can be applied to acupuncture and moxibustion. Further rigorous and well-designed study will be needed for various disease. The oriental medical society needs to take active measures to study and clinical application of acupuncture and moxibustion treatment with high intensity laser.

• Journal of Biomedical Engineering Research
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• v.36 no.5
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• pp.191-197
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• 2015

Laser acupuncture is defined as the stimulation of traditional acupuncture points with low-intensity, nonthermal laser irradiation. Possible advantages in using laser acupuncture are the noninvasive, painless and low risks of infection treatment. The purpose of this study is to assess the effect of laser acupuncture on the quality and waveform of arterial pulses. Ten acupuncture points were stimulated repeatedly three times in 30 individuals by laser with emission in the near infrared spectral region (808 nm) using an out power and power density of 45 mW and $143W/cm^2$. The analysis of pulse quality and waveform was performed based on the measurement of arterial pressure of the left and right wrist, using a 3-dimensional blood pressure pulse analyzer. Excess-like pulse quality of subjects before laser acupuncture changed significantly to balanced pulse quality after 10, 20, and 30 minutes of laser acupuncture; coefficient of deficient or excess, $C_{DE}$, decreased significantly from 0.68 before acupuncture to 0.61, 0.55, and 0.55 after 10, 20, 30 minutes of laser acupuncture ($$p{\leq_-}0.006$$), respectively. Other pulse qualities, floating or sinking, slow or rapid, choppy or slippery did not change significantly by laser acupuncture (p > 0.05). Pulse waveform analysis showed that amplitude of main peak (systolic function or aortic compliance, $h_1$) of left and right artery pulse waves decreased significantly after 10, 20, and 30 minutes of laser acupuncture (p < 0.05). Other parameters, duration of one cardiac cycle (T), duration of rapid systolic ejection ($T_1$), duration of the systolic phase ($T_4$), and duration of the diastolic phase ($T_5$) of left and right artery pulses did not change significantly after laser acupuncture (p > 0.05).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.