• Journal of IKEEE
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• v.13 no.1
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• pp.65-70
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• 2009

We propose an ultrashort pulse optical code-division multiple-access (O-CDMA) scheme based on a pseudorandom binary M-sequence spectral phase encoding and decoding of coherent mode-locked laser pulses and perform a numerical simulation to analyze its feasibility. We demonstrate the ability to properly decode any of the multiple (eight) 10 Gbit/s users by the matched code selection of the spectral phase decoder. The peak power signal to noise ratio of properly and improperly decoded $8{\times}10 Gb/s$ signals could be greater than 15 for 127 M-sequence coding.

• Journal of KSNVE
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• v.9 no.6
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• pp.1227-1233
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• 1999

Modern technology depends on the reliability of extremely high technology equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a nanometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. This paper deals with the structural dynamic design in high class semiconductor factory in order to be satisfied more strict vibration criteria for high sensitive equipment.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.219-222
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• 2004

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.1-5
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• 2019

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.6 s.336
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• pp.61-66
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• 2005

In this paper, we implemented a impulse generator, the one of the part in UWB(Ultra Wide Band) system using step recovery diode(SRD) and gain-switced semiconductor laser. The impulse generator was consisted of four stages; The first stage used SRD to generate the first impulse for gain switching. The second stage controled current for the suitable gain switching condition. The third was the second impulse generator to generate gaussian pulse. For gain switching, the first impulse was applied to semiconductor laser. In the last stage the gain switched impulse was converted into mono-gaussian pulse. The measured mono-gaussian pulse was 360 psec pulse-width and $-70mV \~ +50mV$ amplitude in time domain. In frequency domain its magnitude and bandwidth was, respectively, -41dBm and 3.6GHz. Accordingly, the impulse generator that we suggested was suitable for UWB systems.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.360-364
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• 2000

We demonstrate self-starting passIve mode locking of a Cr:LiSAF laser, using a SCIDlconduclor Saturable Absorber Mirror (SESAM), Two high-power red semiconductor lasers (Coherent S-67-500C-100-H) of wavelength 667 nm and maximum power of 500 mW were used as pump lasers, The cavity has 10 cm radius-ai-curvature folding minors, two SF 10 prisms, a 99% reflectivity output coupler and a SESAM at dIe focus of a 10 cm radIus-at-curvature mirror. We used the laser crystal in BrewsterBrewster shape with 1 5% $Cr^{+3}$ ion concentration and the length of 6 mm, An X-shaped resonator was used to compensate the astigmatism induced by tile crystal. The structure of the SESAM cOllSists of 30 pmr of $AlAs/Al_{0.15}Ga_{0.85}As$ layer, wi1l1 a 10 nm GaAs quantum well situated in the topmost layer Output spectra were centeled at 833 nm, with 4 nm spectral bandwidth and pulse width was measured to be 220 fs, Output power of 3 mW is obtained at a pump power of 800 mW. 00 mW.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.323-328
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• 2002

The model of the shortest chemical bonds is applied for the classification of acentric simple and binary Mo(VI) and W(VI) oxides. It is shown that on the plane of the shortest chemical bonds the compounds are located into the rosette of three intersected ellipses. The correlation between the optical nonlinearity and combination of the bond lengths is discussed.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.162-165
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• 2012

Bow-tie modes were proposed in a grooved rectangular resonator and their lasing characteristics were investigated in semiconductor microcavities. The observed spacing between two adjacent lasing peaks from the grooved cavity was reduced compared to that of 4-bounce whispering gallery modes (WGMs) from the same-sized simple rectangular cavity due to increased round-trip path length of the bow-tie modes. The lasing spectra of bow-tie modes obtained from two adjacent corners showed highly correlated patterns while those of 4-bounce WGMs did not.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.101-104
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• 2006

We have investigated the spectral characteristics of the semiconductor lasers locked to the sidebands of the master laser in this paper, which were expressed by a series of the Bessel function. The numerical model for the semiconductor lasers based on the typical Lang's equation has been extended in order to take into account the simultaneous injection of the multiple sidebands of the directly modulated ML. We analyses characteristics of direct intensity modulation.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.153-157
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• 1991

We report an analysis on the stability properties of external cavity semiconductor lasers exposed to strong feedback from an external grating. The frequency range of stable single mode oscillation is found to depend on the offset between the resonance frequency of the solitary laser and the frequency of maximum reflection from the grating.