• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.355-356
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• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.6
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• pp.793-801
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• 1993

We show theoretically that the performance characteristics of an external cavity semiconductor laser, such as frequency locking and frequency noise reduction, can be greatly improved by just inserting a high finesse Fabry-Perrot(F-P) etalon inside the external reflector. For example, when the F-P etalon of finesse 30 and optical thickness 1.5cm is inserted inside the external cavity of length 3.0cm, the frequency locking accuracy and the linewidth reduction ration are increased up to 7.6 times and 86 times respectively compared with the conventional external-cavity laser under the same operation condition.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.19-25
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• 2015

Strengthened glass is widely used in the display industry for the smart phone and the tablet PC's, the market of which shows steady growth. The strengthened glass is prone to the fracture due to the machined surface defects such as crack and notch. The surface defects are caused mostly by the vibrations of the laser cutter. In this study, the vibrations of the laser cutter were investigated through the frequency response experiment and the computer simulation. The main reasons of the structural vibrations were analyzed, and further the design alterations were deduced and applied to the machine to check the effects of those alterations and to eventually improve the structural stability. The result shows that simple design modifications without major structural change can substantially suppress the vibrations, and improve the quality of the machined surface.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.370-374
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• 1996

A Superstructure Grating(SSG) Distributed-Bragg-Reflector(DBR) laser has a broad tuning range with a good mode suppression ratio. However, gaps of channel are observed in the wavelength-tuning characteristics of an SSGDBR laser which employs linearly-chirped DBR mirrors. We found by numerical simulation that the gaps may be attributed to the nonuniform reflection-peak heights of a linearly-chirped DBR mirrors. We propose a nonlinearly chirped grating DBR mirror structure that makes reflection-peak heights almost uniform. Therefore a nonlinearly chirped grating structure can be employed in an extended tuning range semiconductor laser to achieve gap-free tuning and low threshold current operation simultaneously.

• Current Optics and Photonics
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• v.2 no.1
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• pp.27-33
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• 2018

We report the physical implementation of a tunable photonic microwave delay line filter based on injection locking of a single Fabry-Perot laser diode (FP-LD) to a reflective semiconductor optical amplifier (RSOA). The laser generates equally spaced multiple wavelengths and a single tapped-delay line can be obtained with a dispersive single mode fiber. The filter frequency response depends on the wavelength spacing and can be tuned by the temperature of the FP-LD varying lasing wavelength. For amplitude control of the wavelengths, we use gain saturation of the RSOA and the offset between the peak wavelengths of the FP-LD and the RSOA to decrease the amplitude difference in the wavelengths. From the temperature change of total $15^{\circ}C$, the filter, consisting of four flat wavelengths and two wavelengths with slightly lower amplitudes on both sides, has shown tunability of about 390 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1076-1081
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• 2003

A new technique for generating millimeter-wave signals from a semiconductor laser is presented. The method multiples the signal frequency by using optical injection of short optical pulses at a sub-harmonic of the cavity round-trip frequency to drive the laser oscillating at its resonant frequency. A 32GHz signal is generated using a multisection semiconductor laser operated under continuous wave conditions, by injection optical pulses at a repetition rate equal to the fourth subhamonic(8GHz). The generated millimeter-wave signal exhibits a large submamonic suppression ratio(＞17 dB), large frequency detuning range (>300 MHz) low levels of phase-noise(-77.5 dBc/Hz), and large locking (>400 MHz)

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.2029-2036
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• 2014

The performance analysis of optoelectronic oscillator(OEO) based on a directly modulated semiconductor laser was theoretically achieved. First, the analysis was performed on the open response of the key components that constitute the OEO loop. Using the results, we simulated the open-loop characteristics of the OEO loop. By combining oscillation conditions of loop oscillator in addition to the open-loop magnitude and phase responses, theoretical performance analysis such as OEO's oscillation frequency, spurious tones and phase noise was successfully completed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• Journal of Industrial Technology
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• v.28 no.B
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• pp.235-238
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• 2008

In this paper, we have developed wavelength swept laser system for the swept source optical coherence tomography(SS-OCT). A laser is constructed by using the two SOAs parallel configuration, fiber Fabry-Perot tunable filter(FFP-TF). The wavelength sweeps are repetitively generated with the repetition period of 50Hz. The wavelength tuning range of the laser is more than FWHM of 80nm centered at the wavelength of 1310nm and the line-width of the source is 0.12 nm.

• Korean Journal of Optics and Photonics
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• v.7 no.1
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• pp.24-27
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• 1996

We describe the optical trapping of yeast particles of $3~4\mu\textrm{m}$ in water solution using a diode laser operating at 790 nm. The yeast particles are trapped by a laser focus and are moved in 2- or 3-dimensions. This confirms the concept of negative light pressure by the gradient force due to the difference of the index of refractions of solutions and particles. By moving yeast particle vertically to the laser beam axis, we measured the horizontal component of the trapping force and compared it with the laser power.