• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.55-60
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• 2017

The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.

• 전자공학회논문지
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• 제52권3호
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• pp.105-115
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• 2015

반도체 식각 전산모사에서는 플라즈마 입자를 생성하는 소스의 모델링이 필요하다. 본 논문에서는 플라즈마 식각 공정에서 사용하는 소스를 확률분포함수로 모델링하고, 몬테칼를로 방법을 이용하여 특정 프로프일의 플럭스를 계산하는 실험을 하였다. 소스의 모델링 파라미터로 소스와 셀 사이의 거리, 소스에서 방사하는 입자수가 있고, 플럭스 계산에 미치는 추가적인 파라미터로 프로파일 상의 셀의 수(셀의 면적)이 있다. 방사하는 입자 분포는 사용하는 소스의 물성에 따라 가우시안 분포와 코사인 분포로 모델링 할 수 있는데, 본 논문은 이들 각각에 대하여 파라미터를 바꿔가며 전산모사를 한 결과를 보인다. 오차율은 가우지안(Incident Flux)과 코사인분포(Incident Neutral Flux)에서 모두 입자 수의 증가에 따라 상당부분 감소하였으나 처리시간은 이보다 더 증가하였다. 셀수와 거리의 증가는 오차율을 약간 증가시켰고 처리시간도 증가시켰다. 본 논문의 실험 결과를 통해 처리 시간을 고려하여 적합한 플럭스의 계산을 유추할 수 있다.

• 융합정보논문지
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• 제11권2호
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• pp.10-15
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• 2021

본 논문에서는 먼저 습식 코팅 방법으로 페로브스카이트 (CH3NH3PbI3) 박막을 글라스 상에 형성하고, 다양한 분석 기법을 이용하여 막의 두께, 표면거칠기, 결정성, 구성성분 및 가시광 영역에서의 이 물질의 반응에 대해 논한다. 완성된 반도체 물질은 막내부에 결함(defect)이 없고 균일하며, 표면거칠기는 매우 작으며, 가시광영역에서 높은 흡수율이 관찰되었다. 다음으로 이와 같이 형성된 유무기 층에 hole 형상을 구현하기 위하여, 구멍이 일정한 간격으로 있는 메탈마스크, 페로브스카이트 물질이 코팅되어 있는 유리, 자석 순서로 되어있는 구조의 샘플을 상압플라즈마 공법을 이용하여 시간에 따른 물질에 형성되는 hole 형태의 변화를 분석하였다. 시간이 길어짐에 따라 더 많이 식각되는 것을 알 수 있으며, 이 중에서 공정 시간을 가장 오래한 샘플에 대해서는 보다 자세하게 살펴보았고, 플라즈마의 위치에 따른 차이에 의해 7영역으로 분류할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• 전자공학회논문지D
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• 제36D권10호
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• pp.37-44
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• 1999

건식 식각 공정을 시뮬레이션하기 위하여, 플라즈마 챔버 내의 식각 이온 거동 메카니즘을 몬테카를로 수치해석 방식으로 구현하였고, 식각 이온의 거동에 의한 기판의 식각 형상을 확인하기 위하여 셀 방식의 표면 전진기를 개발하였다. 몬테카를로 수치 계산의 단점인 과다한 계산 시간을 효과적으로 감소시키기 위하여, CRAY T3E 병렬 컴퓨터와 여러대의 워크스테이션을 연결한 MPI 환경에서 몬테카를로 병렬 계산 알고리즘을 개발하였다. 본 연구에서 개발한 몬테카를로 병렬 계산 알고리즘은 95% 이상의 효율성을 보이며, 16개의 프로세서를 사용하였을 때 16의 스피드업(Speedup) 값을 얻었다. 또한 셀 방식의 병렬 연산 표면 전진기를 이용하여 토포그래피 시뮬레이션을 수행한 결과에서, 셀의 개수가 2갭만 개 일 때, 약 600Mb 이상의 메모리가 소요되므로 단일 워크스테이션 환경에서는 불가능한 계산이 본 연구에서 개발한 병렬 계산 알고리즘을 이용하였을 때 32개의 프로세서에서 15분의 계산시간이 소요되었다.

• 한국재료학회지
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• 제13권10호
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Design & Manufacturing
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• 제13권1호
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• pp.13-18
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• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• 한국표면공학회지
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• 제57권2호
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• pp.71-85
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• 2024

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.121-127
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• 2008

This paper presents design and fabrication of optimized geometry structure of electrostatic inkjet head. In order to verify effect of geometry shape, we simulate electric field intensity according to the head structure. The electric field strength increases linearly with increasing height of the micro nozzle. As the nozzle diameter decreases, the electric field along the periphery of the meniscus can be more concentrated. We design and fabricate the electrostatic inkjet heads, hole type and pole type, with optimized structure. It was fabricated using thick-thermal oxidation and silicon micromachining technique such as the deep reactive ion etching (DRIE) and chemical wet etching process. It is verified experimentally that the use of the MEMS inkjet head allows a stable and sustainable micro-dripping mode of droplet ejection. A stable micro dripping mode of ejection is observed under the voltages 2.5 kV and droplet diameter is $10\;{\mu}m$.