• 한국광학회지
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• 제14권5호
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• pp.530-534
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• 2003

새로운 전광(all-optical) NOR논리소자가 반도체 광증폭기 (SOA)의 이득포화 특성을 이용하여 처음으로 제안되고 입증되었다. 전광 NOR논리소자는 이득의 비선형성에 의해 동작되므로 SOA의 이득포화를 충분히 얻기 위해 펌프신호는 SOA의 입력단에서 어븀 첨가 광섬유 증폭기에 의해 증폭되었다. 전광 NOR 논리소자의 동작특성은 10 Gbit/s에서 성공적으로 측정되었다.

• 대한전자공학회논문지SD
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• 제39권7호
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• pp.97-103
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• 2002

본 논문은 레이더 시스템이나 위성 통신용으로 사용되어지는 LVA(Logarithmic Video Amplifier) 설계에 관한 내용이다. 제안된 LVA는 입력단, 증폭단, 그리고 출력단으로 나뉘어진다. 넓은 동작 영역과 고속특성을 갖도록 새로운 직 ${\cdot}$ 병렬 구조를 제안하였으며 LVA와 전단인 Detector Diode와의 입력 범위 조절을 위하여 새로운 입력단을 설계하였다. 제안된 LVA는 1.5 um, 2-poly, 2-Metal, n-well, BiCMOS, 공정을 사용하였으며, 유효 칩 면적은 1310 um x 1540 um 고 10V 전압에서 190 mW 의 전력 소모를 나타내었다. 모의 실험 및 측정을 통하여 60 dB의 동작영역과 100 ns의 falling time을 나타내었다.

• Journal of Semiconductor Engineering
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• 제2권1호
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• pp.109-118
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• 2021

This review paper describes the overall operating principle of a discrete-time delta-sigma modulator (DTDSM) and a continuous-time delta-sigma modulator (CTDSM) using a switched-capacitor (SC). In addition, research that has solved the problems related to each delta-sigma modulator (DSM) is introduced, and the latest developments are explained. This paper describes the chopper-stabilization technique that mitigates flicker noise, which is crucial for the DSM. In the case of DTDSM, this paper addresses the problems that arise when using SC circuits and explains the importance of the operational transconductance amplifier performance of the first integrator of the DSM. In the case of CTDSM, research that has reduced power consumption, and addresses the problems of clock jitter and excess loop delay is described. The recent developments of the analog front end, which have become important due to the increasing use of wireless sensors, is also described. In addition, this paper presents the advantages and disadvantages of the three-opamp instrumentation amplifier (IA), current feedback IA (CFIA), resistive feedback IA, and capacitively coupled IA (CCIA) methods for implementing instrumentation amplifiers in AFEs.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.426-432
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• 2012

A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.139-142
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• 2008

An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.

• 전기의세계
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• 제14권6호
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• pp.1-7
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• 1965

This paper provides the analysis of the differential amplifier using the insulated gate, metala-oxide-semiconductor type field-effect-transistor(MOS FET), for its active element and the power drift of the amplifer. From these analytical considerations some design standardsn were found for the MOS FET differential amplifier available for the measurement of the very small current (pico-ampare range). A differential amplifier was designed and built in the view of above considerations. Its equivalent input gate voltages of the thermal drift and the power drift were 0.57mV/.deg. C in the range 25.deg. C-60.deg. C and 8.8mV/V in the range of 20% drift of its orginal value, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권4호
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• pp.501-505
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• 2015

In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권4호
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• pp.275-280
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• 2006

We propose Doherty power amplifier structure which can be integrated in Silicon RF ICs. Doherty power amplifiers are widely used in RF transmitters, because of their high Power Added Efficiency (PAE) and good linearity. In this paper, it is proposed that a method to replace the quarter wavelength coupler with IQ up-conversion mixers to achieve 90 degree phase shift, which allows on-chip Doherty amplifier. This idea is implemented and manufactured in CMOS 5 GHz band direct-conversion RF transmitter. We measured a 3dB improvement output RF power and linearity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.336-343
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• 2011

This paper introduces a simple variable gain amplifier (VGA) structure that shows an inherently dB-linear gain control property. Requiring no additional components for dB-linear control, the structure is compact and power efficient. The designed two-stage VGA shows a gain control range of 60dB with the gain error in the range of ${\pm}0.4$ dB. The power consumption including the output buffer is 20.4 mW from 1.2 V supply voltage with bandwidth of 630 MHz. The prototype was fabricated in a 0.13 ${\mu}m$ CMOS process and the VGA core occupies 0.06 $mm^2$.

• ETRI Journal
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• 제27권3호
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• pp.334-336
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• 2005

We improved the performance of the spectrum-sliced light source for wavelength-division-multiplexed passive optical networks by employing a Fabry-Perot laser diode(FP-LD). We found that the FP-LDs can suppress the intensity noise as significantly as using a gain-saturated semiconductor optical amplifier. The transmission characteristics were measured and analyzed in both conditions with and without employing an FP-LD.