• Title/Summary/Keyword: Semiconductor Process Data

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A Study of Competency for R&D Engineer on Semiconductor Company (반도체 기술 R&D 연구인력의 역량연구 -H사 기업부설연구소를 중심으로)

  • Yun, Hye-Lim;Yoon, Gwan-Sik;Jeon, Hwa-Ick
    • 대한공업교육학회지
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    • v.38 no.2
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    • pp.267-286
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    • 2013
  • Recently, the advanced company has been sparing no efforts in improving necessary core knowledge and technology to achieve outstanding work performance. In this rapidly changing knowledge-based society, the company has confronted the task of creating a high value-added knowledge. The role of R&D workforce that corresponds to the characteristic and role of knowledge worker is getting more significant. As the life cycle of technical knowledge and skill shortens, in every industry, the technical knowledge and skill have become essential elements for successful business. It is difficult to improve competitiveness of the company without enhancing the competency of individual and organization. As the competency development which is a part of human resource management in the company is being spread now, it is required to focus on the research of determining necessary competency and to analyze the competency of a core organization in the research institute. 'H' is the semiconductor manufacturing company which has a affiliated research institute with its own R&D engineers. Based on focus group interview and job analysis data, vision and necessary competency were confirmed. And to confirm whether the required competency by job is different or not, analysis was performed by dividing members into workers who are in charge of circuit design and design before process development and who are in the process actualization and process development. Also, this research included members' importance awareness of the determined competency. The interview and job analysis were integrated and analyzed after arranging by groups and contents and the analyzed results were resorted after comparative analysis with a competency dictionary of Spencer & Spencer and competency models which are developed from the advanced research. Derived main competencies are: challenge, responsibility, and prediction/responsiveness, planning a new business, achievement -oriented, training, cooperation, self-development, analytic thinking, scheduling, motivation, communication, commercialization of technology, information gathering, professionalism on the job, and professionalism outside of work. The highly required competency for both jobs was 'Professionalism'. 'Attitude', 'Performance Management', 'Teamwork' for workers in charge of circuit design and 'Challenge', 'Training', 'Professionalism on the job' and 'Communication' were recognized to be required competency for those who are in charge of process actualization and process development. With above results, this research has determined the necessary competency that the 'H' company's affiliated research institute needs and found the difference of required competency by job. Also, it has suggested more enthusiastic education methods or various kinds of education by confirming the importance awareness of competency and individual's level of awareness about the competency.

Data-centric XAI-driven Data Imputation of Molecular Structure and QSAR Model for Toxicity Prediction of 3D Printing Chemicals (3D 프린팅 소재 화학물질의 독성 예측을 위한 Data-centric XAI 기반 분자 구조 Data Imputation과 QSAR 모델 개발)

  • ChanHyeok Jeong;SangYoun Kim;SungKu Heo;Shahzeb Tariq;MinHyeok Shin;ChangKyoo Yoo
    • Korean Chemical Engineering Research
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    • v.61 no.4
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    • pp.523-541
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    • 2023
  • As accessibility to 3D printers increases, there is a growing frequency of exposure to chemicals associated with 3D printing. However, research on the toxicity and harmfulness of chemicals generated by 3D printing is insufficient, and the performance of toxicity prediction using in silico techniques is limited due to missing molecular structure data. In this study, quantitative structure-activity relationship (QSAR) model based on data-centric AI approach was developed to predict the toxicity of new 3D printing materials by imputing missing values in molecular descriptors. First, MissForest algorithm was utilized to impute missing values in molecular descriptors of hazardous 3D printing materials. Then, based on four different machine learning models (decision tree, random forest, XGBoost, SVM), a machine learning (ML)-based QSAR model was developed to predict the bioconcentration factor (Log BCF), octanol-air partition coefficient (Log Koa), and partition coefficient (Log P). Furthermore, the reliability of the data-centric QSAR model was validated through the Tree-SHAP (SHapley Additive exPlanations) method, which is one of explainable artificial intelligence (XAI) techniques. The proposed imputation method based on the MissForest enlarged approximately 2.5 times more molecular structure data compared to the existing data. Based on the imputed dataset of molecular descriptor, the developed data-centric QSAR model achieved approximately 73%, 76% and 92% of prediction performance for Log BCF, Log Koa, and Log P, respectively. Lastly, Tree-SHAP analysis demonstrated that the data-centric-based QSAR model achieved high prediction performance for toxicity information by identifying key molecular descriptors highly correlated with toxicity indices. Therefore, the proposed QSAR model based on the data-centric XAI approach can be extended to predict the toxicity of potential pollutants in emerging printing chemicals, chemical process, semiconductor or display process.

Effects of Innovation Characteristics on Spillover: An Empirical Evidence from US Semiconductor Industry (기술혁신의 특성이 파급효과에 미치는 영향에 대한 분석: 반도체산업의 실증분석)

  • Park, Young-Bin
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.145-154
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    • 2017
  • Technology innovation is regarded as the quintessential process to acquire a competitive advantage. This is especially true in high-tech industries, and firms that recognize the importance of technological innovation concentrate their capacities on developing new technologies, new products, and new processes. In general, such research requires many resources, but not all technological breakthroughs are followed by positive feedbacks. Consequently, the firms in high-tech industries are compelled to find new directions in acquiring technologies. This study examines the factors that influence technological innovation and empirically tests the effect these factors have on its diffusion. Radicality, discontinuity, and exploitation/exploration were selected as the factors from the previous literature on technological innovation and organizational learning. For the empirical test, patent data from the US semiconductor industry were used to describe innovation activities from various fields. From the result, these three factors (Ed- is this what you mean, i.e., radicality, discontinuity, and exploitation/exploration?)were found to have significant meaning as proxies for the diffusion of technological innovation.

Implementation of Fuzzy Controller for MFC (MFC의 퍼지제어기 구현)

  • Lee, Seok-Ki;Lee, Yun-Jung;Lee, Seung-Ha
    • Journal of the Korean Institute of Intelligent Systems
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    • v.14 no.5
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    • pp.648-654
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    • 2004
  • The Mass Flow Controller(MFC) has become crucial in semiconductor manufacturing equipments. It is an important element because the quality and the yield of a semiconductor process are decided by the accurate flow control of gas. Therefore, the demand for implementing the high speed and the highly accurate control of MFCs has been increasing. It is hard to find an article of the control algorithm applied to MFCs. But, it is known that commercially available MFCs adopt PID control algorithms. Particularly, when the system detects the flow by way of heat transfer, the MFC control problem includes the slow response and the nonlinearity. In this paper, MFC control algorithm with a superior performance to the conventional PID algorithm is discussed and the superiority is demonstrated through the experiment. A fuzzy controller was utilized in order to compensate the nonlinearity and the slow response, and the performance is compared with that of an MFC currently available in the market. The control system, in this paper, consists of a personal computer, the data acquisition board and the control algorithm carried out by LabWindows/CVI program on the PC. In addition, a method of estimating the actual flow from the sensor output with the slow response is presented. In conclusion, according to the result of the experiment, the proposed algorithm shows better accuracy and is faster than the conventional controller.

An Energy-Balancing Technique using Spatial Autocorrelation for Wireless Sensor Networks (공간적 자기상관성을 이용한 무선 센서 네트워크 에너지 균등화 기법)

  • Jeong, Hyo-nam;Hwang, Jun
    • Journal of Internet Computing and Services
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    • v.17 no.6
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    • pp.33-39
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    • 2016
  • With recent advances in sensor technology, CMOS-based semiconductor devices and networking protocol, the areas for application of wireless sensor networks greatly expanded and diversified. Such diversification of uses for wireless sensor networks creates a multitude of beneficial possibilities for several industries. In the application of wireless sensor networks for monitoring systems' data transmission process from the sensor node to the sink node, transmission through multi-hop paths have been used. Also mobile sink techniques have been applied. However, high energy costs, unbalanced energy consumption of nodes and time gaps between the measured data values and the actual value have created a need for advancement. Therefore, this thesis proposes a new model which alleviates these problems. To reduce the communication costs due to frequent data exchange, a State Prediction Model has been developed to predict the situation of the peripheral node using a geographic autocorrelation of sensor nodes constituting the wireless sensor networks. Also, a Risk Analysis Model has developed to quickly alert the monitoring system of any fatal abnormalities when they occur. Simulation results have shown, in the case of applying the State Prediction Model, errors were smaller than otherwise. When the Risk Analysis Model is applied, the data transfer latency was reduced. The results of this study are expected to be utilized in any efficient communication method for wireless sensor network monitoring systems where all nodes are able to identify their geographic location.

Properties of Acrylic Pressure Sensitive Adhesive Performance and Evaluation Using Combinatorial Methods (조합기법을 활용한 아크릴 점착제의 점착물성 평가)

  • Park, Ji Won;Lim, Dong-Hyuk;Kim, Hyun Joong;Kim, Kyoung Mahn;Kim, Hyung Il;Ryu, Jong Min
    • Journal of Adhesion and Interface
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    • v.10 no.3
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    • pp.127-133
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    • 2009
  • Acrylic pressure sensitive adhesives (PSAs) are used in various field of high-technology industries such as semiconductor, display, mobile, automobile, and so on. Because of they have high durabilities and can be easily introduced functional groups in their molecular structures. PSA perfomances has an effect on their applications in industry process operation, reliability of final products. In this study, PSA performances as a function of fim thickness which is one of the impact factors effects on PSA performances will be investigated using combinatorial methods. Acrylic PSAs are synthesized using 2-ethylhexyl acrylate and acrylic acid. Thickness-gradient of acrylic PSA sample is made by a micro applicator. We compare general coating method with thickness-gradient coating method and evaluate the reappearance of combinatorial methods compared with existing coating method. Thickness-gradient of acrylic PSA sample shows rough and broad data tendency.

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A Codeword Generation Technique to Reduce Dynamic Power Consumption in Tightly Coupled Transmission Lines (밀결합 전송선 상에서 전력 저감을 위한 코드워드 생성 기법)

  • Lim, Jae-Ho;Kim, Deok-Min;Kim, Seok-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.11
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    • pp.9-17
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    • 2011
  • As semiconductor process rapidly developed, the density of chips becomes higher and the space between adjacent lines narrows smaller. This trend increases the capacitance and inductance in interconnects and the coupling-capacitance of adjacent lines grows even bigger than the self-capacitance of themselves, especially in global interconnects. Inductive and capacitive coupling observed in these phenomena may cause serious problems in signal integrity. This paper proposes a codeword generation technique using extra interconnect lines to reduce the crosstalk caused by inductive and capacitive coupling and to reduce dynamic power consumption considering probability of input data. To estimate the performance of the proposed technique, the experimental results have been obtained using FastCap, FastHenry and HSPICE, and it has been shown that the power consumption using the proposed technique has yielded approximately 15% less than the results of the previous technique.

Variation of the Si-induced Gap State by the N defect at the Si/SiO2 Interface

  • Kim, Gyu-Hyeong;Jeong, Seok-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.128.1-128.1
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    • 2016
  • Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

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Investigation on Resistive Switching Characteristics of Solution Processed Al doped Zn-Tin Oxide film

  • Hwang, Do-Yeon;Park, Dong-Cheol;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.180-180
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    • 2015
  • Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

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Design and Implementation of Storage Manager for Real-Time Compressed Storing of Large Volume Datastream (대용량 데이터스트림 실시간 압축 저장을 위한 저장관리자 설계 및 구현)

  • Lee, Dong-Wook;Baek, Sung-Ha;Kim, Gyoung-Bae;Bae, Hae-Young
    • Journal of Korea Spatial Information System Society
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    • v.11 no.3
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    • pp.31-39
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    • 2009
  • Requirement level regarding processing and managing real-time datastream in an ubiquitous environment is increased. Especially, due to the unbounded, high frequency and real-time characteristics of datastream, development of specialized stroge manager for DSMS is necessary to process such datastream. Existing DSMS, e.g. Coral8, can support datastream processing but it is not scalable and cannot perform well when handling large-volume real-time datastream, e.g. 100 thousand over per second. In the case of Oracle10g, which is generally used in related field, it supports storing and management processing. However, it does not support real-time datastream processing. In this paper, we propose specialized storage manager of DSMS for real-time compressed storing on semiconductor or LCD production facility of Samsung electronics, Hynix and HP. Hynix and HP. This paper describes the proposed system architecture and major components and show better performance of the proposed system compared with similar systems in the experiment section.

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