• Title/Summary/Keyword: Semiconductor Process Data

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Enhancement of the Virtual Metrology Performance for Plasma-assisted Processes by Using Plasma Information (PI) Parameters

  • Park, Seolhye;Lee, Juyoung;Jeong, Sangmin;Jang, Yunchang;Ryu, Sangwon;Roh, Hyun-Joon;Kim, Gon-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.132-132
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    • 2015
  • Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

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Oxidation Reaction of silicon Oxids fabricated by Rapid Thermal Process in $N_2$O ambient ($N_2$O 분위기에서 RTP로 제조한 실리콘 산화막의 산화 반응)

  • Park, Jin-Seong;Lee, U-Seong;Sim, Tae-Eon
    • Korean Journal of Materials Research
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    • v.3 no.1
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    • pp.7-11
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    • 1993
  • Abstract Oxidation kinetics of silicon oxide films formed by rapid thermal oxidizing Si substrate in $N_2$O ambient studied. The data on $N_2$0 oxidation shows that the interfacial nitrogen-rich layers results in oxide growth in the parabolic regime by impeding oxidant diffusion to the Si$O_2$-Si interface even for ultrathin oxides. The activation energy of parablic rate constant, B, is about 1.5 eV, and the energy increses with oxide thickness.

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A MFC Control Algorithm Based on Intelligent Control

  • Lee, Seok-Ki;Lee, Seung-Ha;Lee, Yun-Jung
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1295-1299
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    • 2003
  • The Mass Flow Controller(MFC) has become crucial in semiconductor manufacturing equipments. It is an important element because the quality and the yield of a semiconductor process are decided by the accurate flow control of gas. Therefore, the demand for the high speed and the highly accurate control of MFCs has been requested. It is hard to find an article of the control algorithm applied to MFCs. But, it is known that commercially available MFCs have PID control algorithms. Particularly, when the system detects the flow by way of heat transfer, MFC control problem contains the time delay and the nonlinearity. In this presentation, MFC control algorithm with the superior performance to the conventional PID algorithm is discussed and the superiority is demonstrated through the experiment. Fuzzy controller was utilized in order to compensate the nonlinearity and the time delay, and the performance is compared with that of a product currently available in the market. The control system, in this presentation, consists of a personal computer, the data acquisition board and the control algorithm carried out by LabWindows/CVI program on the PC. In addition, the method of estimating an actual flow from sensor output containing the time delay and the nonlinearity is presented. In conclusion, according to the result of the experiment, the proposed algorithm shows better accuracy and is faster than the conventional controller.

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The Sources and Directions of Technological Capability Accumulation in Korean Semiconductor industry

  • Rim, Myung-Hwan;Choung, Jae-Yong;Hwang, Hye-Ran
    • ETRI Journal
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    • v.20 no.1
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    • pp.55-73
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    • 1998
  • In this paper we analyze the technological accumulation processes in the Korean semiconductor industry from the institutional approach. Institutional approach, which is closely connected with Neo-Schumpeterian tradition, has emerged as an alternative theoretical framework to neoclassical approach to understand the process of producing technological knowledge. Traditional wisdom of neoclassical approach revealed the limitation to explain the complex nature of knowledge creation and diffusion. US patent data are analyzed in terms of the increasing trend of numbers and its content to measure the rate and direction of technological capability accumulation. This analysis shows that semiconductor technologies are one of the fastest growing fields among Korean technological activities. Moreover, the analysis of patent content suggests that fabrication technologies are the most important area within the technological development of semiconductors, whilst circuit design and testing technologies are beginning to increase in significance. In addition, it is examined how private sectors and public institutions have contributed to generate technological capabilities, and the relationship between them has been changed during the development processes. It is found that Korean firms enhanced their technological capabilities from the learning and assimilation of imported technology to enhanced in-house R&D capabilities in the later stage. The support of public institution and government policy also played significant role to this successful transformation in conjunction with vigorous R&D investment of public sector.

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Design of a 25 mW 16 frame/s 10-bit Low Power CMOS Image Sensor for Mobile Appliances

  • Kim, Dae-Yun;Song, Min-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.2
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    • pp.104-110
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    • 2011
  • A CMOS Image Sensor (CIS) mounted on mobile appliances requires low power consumption due to limitations of the battery life cycle. In order to reduce the power consumption of CIS, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination and a low power single slope analog-to-digital (A/D) converter with a sleep-mode comparator. Based on 0.13 ${\mu}m$ CMOS process, the chip satisfies QVGA resolution (320 ${\times}$ 240 pixels) that the cell pitch is 2.25 um and the structure is a 4-Tr active pixel sensor. From the experimental results, the performance of the CIS has a 10-b resolution, the operating speed of the CIS is 16 frame/s, and the power dissipation is 25 mW at a 3.3 V(analog)/1.8 V(digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption was reduced by approximately 22% in the sleep mode, and 20% in the active mode.

A Case Study of Comparing the Measuring Methods for Workloads of Resources in a Manufacturing Processes of Semiconductor-Parts (반도체부품 생산공정 자원의 부하 측정방법 비교분석 사례연구)

  • Kim, Dong-Soo;Moon, Dug-Hee
    • Journal of the Korea Society for Simulation
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    • v.20 no.3
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    • pp.49-58
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    • 2011
  • The workloads of facilities and laborers are important for the capacity planning in a factory. They are always referenced whenever a factory develops a new product, increases the production quantity and makes a plan of new investment. There are many measuring methods for estimating the workload effectiveness of facilities and laborers. In this paper, various measuring methods including survey, work sampling, micro-motion study, data gathering from ERP system and simulation, are analyzed for comparing the accuracy of workload. This case study is conducted in a Korean company that produces semiconductor parts like leadframe and packaging substrate.

A Deep Learning-Based Model for Predicting Traffic Congestion in Semiconductor Fabrication (딥러닝을 활용한 반도체 제조 물류 시스템 통행량 예측모델 설계)

  • Kim, Jong Myeong;Kim, Ock Hyeon;Hong, Sung Bin;Lim, Dae-Eun
    • Journal of Industrial Technology
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    • v.39 no.1
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    • pp.27-31
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    • 2019
  • Semiconductor logistics systems are facing difficulties in increasing production as production processes become more complicated due to the upgrading of fine processes. Therefore, the purpose of the research is to design predictive models that can predict traffic during the pre-planning stage, identify the risk zones that occur during the production process, and prevent them in advance. As a solution, we build FABs using automode simulation to collect data. Then, the traffic prediction model of the areas of interest is constructed using deep learning techniques (keras - multistory conceptron structure). The design of the predictive model gave an estimate of the traffic in the area of interest with an accuracy of about 87%. The expected effect can be used as an indicator for making decisions by proactively identifying congestion risk areas during the Fab Design or Factory Expansion Planning stage, as the maximum traffic per section is predicted.

Airborne Fine Particle Measurement Data Analysis and Statistical Significance Analysis (공기중 미세입자 측정 데이터 분석 및 통계 유의차 분석)

  • Sung Jun An;Moon Suk Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.1-5
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    • 2023
  • Most of the production process is performed in a cleanroom in the case of facilities that produce semiconductor chips or display panels. Therefore, environmental management of cleanrooms is very important for product yield and quality control. Among them, airborne particles are a representative management item enough to be the standard for the actual cleanroom rating, and it is a part of the Fab or Facility monitoring system, and the sequential particle monitoring system is mainly used. However, this method has a problem in that measurement efficiency decreases as the length of the sampling tube increases. In addition, a statistically significant test of deterioration in efficiency has rarely been performed. Therefore, in this study, the statistically significant test between the number of particles measured by InSitu and the number of particles measured for each sampling tube ends(Remote). Through this, the efficiency degradation problem of the sequential particle monitoring system was confirmed by a statistical method.

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Implementation of Embedded Geo-coding System for Image's Geo-Location (영상의 위치 정보를 위한 임베디드 지오코딩 시스템 구현)

  • Lee, Yong-Hwan;Kim, Young-Seop
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.3
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    • pp.59-63
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    • 2008
  • Geo-coding refers to the process of associating data with location information, and the system deals with geographic identifiers expressed as latitude and longitude or street addresses. Although many services have been launched, there still remains a problem for users to create geo-coded photo with manually labeling GPS(Global Positioning System) coordinate or synchronizing with separate devices. In this paper, we design and implement a geo-coding system which utilizes the time and location information embedded in digital photographs in order to automatically categorize a personal photo collection. An included GPS receiver labels a photograph with its corresponding GPS coordinates, and the position of the camera is automatically recorded into the photo image header at the moment of capture. The place and time where the photo was taken allows us to provide context metadata on the management and retrieval of information.

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Development and Performance Test of In-situ Particle Monitoring System using Ion-counter in Vacuum Environments (진공 환경내 실시간 입자 모니터링 시스템의 개발 및 성능평가)

  • Ahn Kang-Ho;Kim Yong-Min;Kwon Yong-Taek
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1 s.14
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    • pp.45-49
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    • 2006
  • In this paper, a new method that monitors the quantity of particles using ion-counter in vacuum environment is introduced. In-situ particle monitoring (ISPM) system is composed by Gerdien type ion-counter (house-made), DC power supply and electrometer. The ion-counter applied by positive voltage detects only positive charged particles. Therefore the particles to be detected should be in known charge state for further data analysis. ion-counter is installed at the exhaust line of process equipment where the pressure loss is structurally low. ISPM system performance has been verified with SMPS (Scanning Mobility Particle Sizer) system. The correlation coefficient is above 0.98 at the particle size range of $20{\sim}300nm$ in diameter with identified charge distribution under $0.1{\sim}10.0$ Torr.

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