• Title/Summary/Keyword: Semiconductor Process Data

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A Study on the Development of Computer Aided Die Design System for Lead Frame, Semiconductor (반도체 리드 프레임의 금형설계 자동화 시스템 개발에 관한 연구)

  • Choe, Jae-Chan;Kim, Byeong-Min;Kim, Cheol;Kim, Jae-Hun;Kim, Chang-Bong
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.6
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    • pp.123-132
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    • 1999
  • This paper describes a research work of developing computer-aided design of lead frame, semiconductor, with blanking operation which is very precise for progressive working. Approach to the system is based on the knowledge-based rules. Knowledge for the system is formulated from pasticity theories, experimental results and the empirical knowledge of field experts. This system has been written in AutoLISP on the AutoCAD using a personal computer and in I-DEAS Drafting Programming Language on the I-DEAS Master Series Drafting with Workstation, HP9000/715(64). Transference of data between AutoCAD and I-DEAS Master Series Drafting is accomplished by DXF(drawing exchange format) and IGES(initial graphics exchange specification) methods. This system is composed of five modules, which are input and shape treatment, production feasibility check, strip-layout, data-conversion and die-layout modules. The process planning and Die design system is designed by considering several factors, such as complexities of blank geometry, punch profiles, and the availability of a press equipment and standard parts. This system provides its efficiecy for strip-layout, and die design for lead frame, semiconductor.

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Simulation Methodology for Diffusion Process in Poly-silicon (다결정 실리콘의 확산 공정 시뮬레이션)

  • Lee, Hoong-Joo;Lee, Jun-Ha
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.1 s.10
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    • pp.23-27
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    • 2005
  • This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion hat shown a good agreement with the SIMS data.

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Image Retrieval Method Using Color Descriptor (색상 정보를 이용한 영상 검색 기법)

  • Cho, Jae-Hoon;Lee, Sang-Ho;Kim, Young-Seop
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.69-76
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    • 2008
  • Recently, as the multimedia processing application increases rapidly by going on increasing multimedia data, the efficient retrieval method of image information is required in many fields of application and becoming the matter of major concern. Furthermore, in the last few years rapid improvements in hardware technology have made it possible to process, store and retrieve huge amounts of data in a multimedia format. As a result, Content-Based Image Retrieval (CBIR) has been receiving widespread interest during the last decade. This paper propose the content-based retrieval system as a method for performing image retrieval through the effective feature analysis of the object of significant meaning by using YCbCr channel merging on the basis of the characteristics of man's visual system.

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A Study on the Depth Map using Single Edge (단일 엣지를 이용한 깊이 정보에 관한 연구)

  • Kim, Young-Seop;Song, Eung-Yeol
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.2
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    • pp.123-126
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    • 2010
  • An implementation of modified stereo matching using efficient belief propagation (BP) algorithm is presented in this paper. We do recommend the use of the simple sobel, prewitt edge operator. The application of B band sobel edge operator over image demonstrates result with somewhat noisy (distinct border). When we adopt the only MRF + BP algorithm, however, borders cannot be distinguished due to that the message functions in the BP algorithm is just the mechanism which passes energy data to the only large gap of each Message functions In order to address the abovementioned disadvantageous phenomenon, we use the sobel edge operator + MRF + BP algorithm to distinguish the border that is located between the similar message data. Using edge information, the result shows that our proposed process diminishes the propagation of wrong probabilistic information. The enhanced result is due to that our proposed method effectively reduced errors incurred by ambiguous scene properties.

Monitoring of semiconductor plasma process using wavelet and X-ray photoelectron spectroscopy (웨이브릿과 X-ray 광전자 분광법을 이용한 반도체 플라즈마 공정 감시 기법)

  • Park, Kyoung-Young;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2005.05a
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    • pp.281-283
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    • 2005
  • Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

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Analysis of Energy Consumption for Microwave Drying in PC Pellet (PC 펠렛의 마이크로웨이브 건조를 위한 에너지 효율 분석)

  • Lee, Hyun Min;Kim, Jae Kyung;Jeon, Euy Sik
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.44-48
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    • 2021
  • Semiconductor inspection equipment makes components using materials with insulating properties for functional inspection including current and voltage of semiconductor parts. A representative insulating material is plastic, and plastic is made of a component through an injection process using plastic pellet. When plastic pellets contain excessive moisture, problems such as performance degradation and product surface defects occur. To prevent this, pre-drying is essential, and the heat convective type is the most applied. However, the heat convective type has a problem of low consumption efficiency and a long drying time. Recently, many studies have been conducted on a drying method using microwaves due to high energy efficiency. In this paper, drying was performed using a microwave for drying PC pellets. Energy consumption and drying efficiency analyzed by set up an experimental apparatus of heat convective, microwave, and hybrid(heat convective + microwave) types. It was confirmed that energy consumption and drying efficiency were high when drying using microwaves, and it was confirmed that the hybrid method improved drying performance compared to the heat convective method. It is expected that the research results of this paper can be used as basic data for drying plastic pellets using microwave.

Evaluation of Hazardous Chemicals with Material Safety Data Sheet and By-products of a Photoresist Used in the Semiconductor-Manufacturing Industry

  • Jang, Miyeon;Yoon, Chungsik;Park, Jihoon;Kwon, Ohhun
    • Safety and Health at Work
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    • v.10 no.1
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    • pp.114-121
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    • 2019
  • Background: The photolithography process in the semiconductor industry uses various chemicals with little information on their constitution. This study aimed to identify the chemical constituents of photoresist (PR) products and their by-products and to compare these constituents with material safety data sheets (MSDSs) and analytical results. Methods: A total of 51 PRs with 48 MSDSs were collected. Analysis consisted of two parts: First, the constituents of the chemical products were identified and analyzed using MSDS data; second, for verification of the by-products of PR, volatile organic compounds were analyzed. The chemical constituents were categorized according to hazards. Results: Forty-five of 48 products contained trade secrets in amounts ranging from 1 to 65%. A total of 238 ingredients with multiple counting (35 ingredients without multiple counting) were identified in the MSDS data, and 48.7% of ingredients were labeled as trade secrets under the Korea Occupational Safety and Health Act. The concordance rate between the MSDS data and the analytical result was 41.7%. The by-product analysis identified 129 chemicals classified according to Chemical Abstracts Service No., with 17 chemicals that are carcinogenic, mutagenic, and reprotoxic substances. Formaldehyde was found to be released from 12 of 21 products that use novolak resin. Conclusion: We confirmed that several PRs contain carcinogens, and some were not specified in the toxicological information in the MSDS. Hazardous chemicals, including benzene and formaldehyde, are released from PRs products as by-products. Therefore, it is necessary to establish a systematic management system for chemical compounds and the working environment.

A Study on Diagnosis of BLDC motor and New data-set Feature Extraction using Park's Vector Approach (Park's Vector Approach를 이용한 BLDC모터진단 방법과 새로운 데이터 셋 특징 추출 연구)

  • Goh, Yeong-Jin;Kim, Ji-Seon;Lee, Buhm;Kim, Kyoung-Min
    • Journal of IKEEE
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    • v.26 no.1
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    • pp.104-110
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    • 2022
  • In this paper, we propose a new dataset for AI diagnosis and BLDC motor diagnosis in UAV. In the diagnosis of BLDC motor, PVA(Park's Vector Approach) is difficult to apply due to many ripples of frequency components. However, since the components of ripples are the third harmonics, we propose a method to utilize PVA as circle fitting by applying Savitzky-Golay filter which is excellent for the third harmonics. On the other hand, PVA, a technique to convert from three-phase to two-phase, is always based on the origin during the transformation process. This study demonstrates that the error of the origin and the measured center can be detected and diagnosed in the application process of Circle fitting, and that it can be used as a new data set of AI technology.

A Study on Implanted and Annealed Antimony Profiles in Amorphous and Single Crystalline Silicon Using 10~50 keV Energy Bombardment (비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.11
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    • pp.683-689
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    • 2015
  • For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

Fabrication and yield improvement of oxide semiconductor thin film gas sensor array (산화물 반도체 박막 가스센서 어레이의 제조 및 수율 개선)

  • 이규정;류광렬;허창우
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.2
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    • pp.315-322
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    • 2002
  • A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric-pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.% Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.