• 한국환경과학회지
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• 제9권4호
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• pp.325-330
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• 2000

The hydroxyapatite (HAp) for the present study was prepared by precipitation method in semiconductor fabrication and the crystallized at ambient to 95$0^{\circ}C$ for 30min in electric furnace. The ion-exchange characteristics of HAp for various heavy metal ions such as $Cd^{2+}, Cu^{2+}, Mn^{2+}, Zn^{2+}, Fe^{2+}, Pb^{2+}, Al^{3+}, and Cr^{6+}$ in aqueous solution has been investigated. The removal ratio of various metal ions for HAp were investigated with regard to reaction time, concentration of standard solution, amount of HAp and pH of solution. The order of the ions exchanged amount was as follws: $Pb^{2+}, Fe^{3+}>Cu^{2+}>Zn^{2+}>Al^{3+}>Cd^{2+}>Mn^{2+}>Cr^{6+}. The Pb^{2+}$ ion was readily removed by the Hap, even in the strongly acidic region. The maximum amount of the ion-exchange equilibrium for $Pb^{2+}$ ion was about 45 mg/gram of HAp. The HAp would seem to be possible agent for the removal of heavy metal ions in waste water by recycling of waste sludge in semiconductor fabrication.

• 한국유체기계학회 논문집
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• 제16권2호
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• pp.10-14
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• 2013

The present study conducts CFD analyses on the internal flow fields of roots type vacuum pumps of semiconductor fabrication facility, and the computed CFD results for internal pressure and temperature distributions are applied to structural analyses of the pumps. The coupled analysis results between flow and structure show that the deformation of pump structure is mainly resulted from the thermal expansion of gas in pump, and the deformed impeller and housing produce their severe contact and impact phenomena causing mechanical damage and fracture.

• 산업공학
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• 제10권1호
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• pp.15-22
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• 1997

In semiconductor manufacturing, the probe process between fabrication and assembly process is constrained mostly by the equipment capacity because most products pass through the similar procedures. The probe process is usually performed in a batch mode with relatively short cycle times. The capability of the probe process can be determined by the optimal combination of the equipments and the products. A probe line usually has several types of equipment with different capacity. In this study, the probe line is modeled in terms of capacity to give the efficient planning and control procedure. For the practical usage, the hierarchical capacity planning procedure is used. First, a monthly capacity plan is made to meet the monthly production plan of each product. Secondly, the daily capacity planning is performed by considering the monthly capacity plan and the daily fabrication output. Simple heuristic algorithms for daily capacity planning are developed and some experimental results are shown.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.27-30
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• 2003

The effect of fabrication method of catalytic layer on electrode performance has been investigated. Brush, spray gun and screen printer were used as fabrication tool and catalytic layers were formed by several methods in screen printing. Direct screen printing on polymer membrane, screen printing on carbon paper, and their combined method were applied. In the electrode fabricated by the screen printing method, Pt loading of Pt/C catalysts could be cut down to 50%, compared with results by the brushing and spraying methods. The best result of electrode was obtained as 0.6 V, at 1 A/$\textrm{cm}^2$ when catalytic layer was formed by the combined way.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.59-63
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• 2002

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.

• 한국환경과학회지
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• 제11권3호
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• pp.257-262
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• 2002

The hydroxyapatite(HAp) for the present study was prepared with the wastewater sludge from semiconductor fabrication process and it was crystallized in an electric furnace for 30 min at 90$0^{\circ}C$. The adsorption characteristics of HAp for phosphate ion in aqueous solution has been investigated. The adsorbed ratio of phosphate ion for HAp were investigated according to the reaction time, amount of HAp, concentration of standard solution, pH of solution, and influence of concomitant ions. The amount of adsorbed phosphate ion decreased with the increase of pH due to the mutual electrostatic repulsion between adsorbed phosphate ions and competitive adsorption between phosphate ion and OH- ion in aqueous solution. The maxium amount of the adsorption equilibrium for phosphate ion was about 24 mg/g of HAp. The HAp would likely to be a possible adsorbent for the removal of phosphate ion in the waste water.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.124-128
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• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• 한국정보통신학회논문지
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• 제4권5호
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• pp.1151-1156
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• 2000

본 논문에서는 III-V 화합물 반도체 마이크로머시닝을 위한 InP를 기반으로한 미세구조의 제조에 관하여 보고한다. InP/InGaAsP/InP 구조를 성장시키기 위하여 수직 LPE 시스템을 사용하였다. 성장된 InGaAsP층의 두께는 $0.4\mum$이고, InP top-layer의 두께는 $1\mum$이었다. InGaAsP 미세구조의 제조는 front-side 벌크 마이크로 머시닝으로 이루어졌다. 실험결과에서 <100> 방향으로 놓인 빔의 에칭이<110>와 <110> 방향에서의 에칭보다 더 빠르기 때문에 빔은 <100> 방향으로 정렬되어야 함을 보였다.