• Journal of the Korean Vacuum Society
• /
• v.17 no.4
• /
• pp.278-291
• /
• 2008

For the semiconductor manufacturing processes, so many vacuum systems are needed with large power consumption for vacuum pumps. Semiconductor device manufacturing makers are concerned about the power consumption and have to address this because it is related with the environmental issues. So many solutions including the design and the control of them by vacuum pump manufacturers to reduce the power consumption of vacuum pump are proposed. However, how to use vacuum pumps by users and the conditions for vacuum pump to be used are also very important to reduce the power consumption. In this article, how to reduce the power consumption of vacuum pumps is explained briefly and what the impact of semiconductor technology trend on the power consumption is considered very briefly.

• Journal of the Korean Institute of Gas
• /
• v.24 no.2
• /
• pp.15-21
• /
• 2020

Currently, in KS C IEC 60079-10-1, the leakage hole radius of secondary leakage is expressed as a recommendation. Underestimation of leak hole size can lead to underestimation of the calculated values for leak rates, and conservative calculations of leak hole sizes, which are considered for safety reasons, can be overestimated, resulting in an overestimated risk range. This too should be avoided. Therefore, a careful and balanced approach is necessary when estimating the size of leaking holes.Based on this logic, this study examines the stability by grasping the concentration inside the gas box when leaking dangerous substances as a result of experiments based on SEMI S6, an international safety standard applied in the semiconductor industry and The scope of explosion hazardous area was determined by applying the formula of KS C IEC 60079-10-1 according to SEMI F15 leak rate criteria and SEMI S6 leak rate criteria. Based on this, we will examine whether the exhaust performance needs to be improved as an alternative to FAB facilities that are difficult to apply to explosion hazards such as semiconductor industry.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.464-464
• /
• 2010

A few years ago, for maintaining high stability and production yield of production equipment in a semiconductor fab, on-line monitoring of wafers is required, so that semiconductor manufacturers are investigating a software based process controlling scheme known as virtual metrology (VM). As semiconductor technology develops, the cost of fabrication tool/facility has reached its budget limit, and reducing metrology cost can obviously help to keep semiconductor manufacturing cost. By virtue of prediction, VM enables wafer-level control (or even down to site level), reduces within-lot variability, and increases process capability, $C_{pk}$. In this research, we have practiced VM on $SiO_2$ etch rate with optical emission spectroscopy(OES) data acquired in-situ while the process parameters are simultaneously correlated. To build process model of $SiO_2$ via, we first performed a series of etch runs according to the statistically designed experiment, called design of experiments (DOE). OES data are automatically logged with etch rate, and some OES spectra that correlated with $SiO_2$ etch rate is selected. Once the feature of OES data is selected, the preprocessed OES spectra is then used for in-situ sensor based VM modeling. ICP-RIE using 葰.56MHz, manufactured by Plasmart, Ltd. is employed in this experiment, and single fiber-optic attached for in-situ OES data acquisition. Before applying statistical feature selection, empirical feature selection of OES data is initially performed in order not to fall in a statistical misleading, which causes from random noise or large variation of insignificantly correlated responses with process itself. The accuracy of the proposed VM is still need to be developed in order to successfully replace the existing metrology, but it is no doubt that VM can support engineering decision of "go or not go" in the consecutive processing step.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.1
• /
• pp.32-37
• /
• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• IE interfaces
• /
• v.21 no.2
• /
• pp.229-236
• /
• 2008

Recently, ubiquitous computing paradigm considers as a tool for making innovation and competitive strength in manufacturing industry like other industries. Particularly, the location-based service that enables us to trace real-time logistics make effective management of schedules for inventory control, facilities and equipments, jobs planning, and facilitate the processes of information management and intelligence, which relate with ERP and SCM in organizations. Our study tries to build the location-based system for products of semiconductors in manufacturing place and suggests the good conditions and effective tracking procedures for positions of products. Our study show that the system is good for the saving of time in tracking products, however, it has to be improved in terms of accuracy. The study verifies the application of RFID technology in manufacturing industry and suggests the improvement of photograph process through RFID. In addition, our research introduces the future operation of FAB in semiconductors' processes that relate with real-time automation and RFID in manufacturing company.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.2
• /
• pp.45-50
• /
• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.98-102
• /
• 2021

GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga₂O₃ at 500℃ annealing. As the annealing temperatures increase the α-Ga₂O₃ is in part turned into β-Ga₂O₃ and fully turned into β-Ga₂O₃ after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga₂O₃ and β-Ga₂O₃ become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.

• IE interfaces
• /
• v.10 no.1
• /
• pp.57-65
• /
• 1997

Less researches on AGV(Automated Guided Vehicle) path configurations have been conducted so far while more studies have been placed in determining AGV guide path directions and pick-up/drop-off station locations, and routing/dispatching/scheduling strategies. In practice plenty of concerns fall in preventing deadlock and simplifying AGV system control through an appropriate AGV path configuration. In order to meet those requirements, a new AGV path configuration, inter-loop stocker type is introduced here. The stocker serves as relaying material between loops as well as stocking material. Automated material handling systems using AGVs play an important role in semiconductor industry including TFT LCD and memory/non-memory chip. A practical example of implementing the inter-loop stocker concept successfully in the TFT LCD fab is presented in this paper.

• IE interfaces
• /
• v.10 no.1
• /
• pp.79-93
• /
• 1997

지난 30여 년간 반도체 제조 공정 중 FAB공정에서 칩 수율 모델의 개발과 적용은 반도체생산 계획 및 조업 관리를 위해 반도체 제조사들에게는 중요한 관리 대상이 되어 왔으며 제조업체들은 다양한 수율 모델들을 각 업체의 조건에 맞게 채택, 적용하여 왔다. 집적 기술의 발전은 반도체 칩의 크기에도 변화를 가져와 웨이퍼상의 결점들이 형성하는 클러스터를 설명할 수 있어야 했으며 칩 면적의 증가는 새로운 수율 모델을 개발케 하였다. 본 논문은 반도체 제조 공정에 대한 고찰과 수율 계산에 영향을 미치는 결점의 클러스터 효과 및 결점 크기를 중심으로 하는 치명 확률에 대하여 살펴보고, 포아송 모델에서 파생된 대표적인 칩 수율 모델들에 대한 설명과 칩 면적의 변화에 따른 각 모델별 수율 계산 비교 및 반도체 수율의 이용에 대하여 기술한다.

• Proceedings of the Korean Operations and Management Science Society Conference
• /
• 2006.11a
• /
• pp.525-528
• /
• 2006

This paper considers the vehicle dispatching problem in the automated material handling system (AMHS) of a large scale semiconductor fabrication line, which consists of 18 bays, 468 equipments and uses more than 130 overhead hoist transporters (OHT). We propose an assignment problem based vehicle dispatching approach to take advantage of simultaneous vehicle reassignment based on up-to-date system status. The proposed approach compares fsvorably with the shortest travel distance first rule and with the reassignment based rule which was recently proposed by the authors, in the number of vehicles required and the average lead time.