• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.24-37
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• 2024

Due to the thin nature of semiconductor packages, even minor thermal loads can cause significant warpage, impacting product reliability through issues like delamination or cracking. The mold curing process, which encloses the package to protect the semiconductor chip, is particularly challenging to predict due to the complex thermal, chemical, and mechanical interactions. This study proposes a cost-effective machine learning model to predict warpage in the mold curing process. We developed methods to characterize the curing degree based on time and temperature and quantify the material's mechanical properties accordingly. A Finite Element Method (FEM) simulation model was created by integrating these properties into ABAQUS UMAT to predict warpage for various design factors. Additionally, a Warpage formula was developed to estimate local warpage based on the package's stacking structure. This formula combines bending theory with thermo-chemical-mechanical properties and was validated through FEM simulation results. The study presents a method to construct a machine learning model for warpage prediction using this formula and proposes a cost-effective approach for building a training dataset by analyzing input variables and design factors. This methodology achieves over 98% prediction accuracy and reduces simulation time by 96.5%.