• Title/Summary/Keyword: Semiconducting phase

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The Effect of Particle Size and Compaction Pressure on the Thermoelectric Properties of n-type FeSi2 (N형 FeSi2의 열전특성에 미치는 입자크기 및 성형압력의 영향)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.7
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    • pp.4835-4841
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    • 2015
  • The effect of particle size and compaction pressure on the thermoelectric properties of n-type $FeSi_2$ was investigated. The starting powders with various particle size were pressed into a compact (compaction pressure; $70{\sim}220kg/cm^2$). The compact specimens were sintered at 1473 K for 7 h and annealed at 1103 K for 100 h under Ar atmosphere to transform to the semiconducting ${\beta}$-phase. The microstructure and phases of the specimens were observed by SEM, XRD and EDS. The electrical conductivity and Seebeck coefficient were measured simultaneously for the same specimen at r.t.~1023 K in Ar atmosphere. The electrical conductivity increased with decreasing particle size and hence the increases of relative density of the sintered body and the amount of residual metallic phase ${\varepsilon}$-FeSi due to a increase of the electrical conductivity. The Seebeck coefficient exhibited the maximum value at about 700~800 K and decreased with decreasing particle size. This must be due to a increase of residual metallic phase ${\varepsilon}$-FeSi. On the other hand, the change of compaction pressure appeared to have little effect on the thermoelectric properties. Consequently, the power factor would be affected more by particle size than compaction pressure.

Full Parametric Impedance Analysis of Photoelectrochemical Cells: Case of a TiO2 Photoanode

  • Nguyen, Hung Tai;Tran, Thi Lan;Nguyen, Dang Thanh;Shin, Eui-Chol;Kang, Soon-Hyung;Lee, Jong-Sook
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.244-260
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    • 2018
  • Issues in the electrical characterization of semiconducting photoanodes in a photoelectrochemical (PEC) cell, such as the cell geometry dependence, scan rate dependence in DC measurements, and the frequency dependence in AC measurements, are addressed, using the example of a $TiO_2$ photoanode. Contrary to conventional constant phase element (CPE) modeling, the capacitive behavior associated with Mott-Schottky (MS) response was successfully modeled by a Havriliak-Negami (HN) capacitance function-which allowed the determination of frequency-independent Schottky capacitance parameters to be explained by a trapping mechanism. Additional polarization can be successfully described by the parallel connection of a Bisquert transmission line (TL) model for the diffusion-recombination process in the nanostructured $TiO_2$ electrode. Instead of shunt CPEs generally employed for the non-ideal TL feature, TL models with ideal shunt capacitors can describe the experimental data in the presence of an infinite-length Warburg element as internal interfacial impedance - a characteristic suggested to be a generic feature of many electrochemical cells. Fully parametrized impedance spectra finally allow in-depth physicochemical interpretations.

Thermoelectric Properties of n-Type Half-Heusler Compounds Synthesized by the Induction Melting Method

  • Du, Nguyen Van;Lee, Soonil;Seo, Won-Seon;Dat, Nguyen Minh;Meang, Eun-Ji;Lim, Chang-Hyun;Rahman, Jamil Ur;Kim, Myong Ho
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.6
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    • pp.342-345
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    • 2015
  • The n -type Hf0.25Zr0.25Ti0.5NiSn0.998Sb0.002 Half-Heusler (HH) alloy composition was prepared by using the induction melting method in addition to the mechanical grinding, annealing, and spark plasma sintering processes. Analysis of X-ray diffraction (XRD) results indicated the formation of a pure phase HH structured compound. The electrical and thermal properties at temperatures ranging from room temperature to 718 K were investigated. The electrical conductivity increased with increasing temperatures and demonstrated nondegenerate semiconducting behavior, and a large reduction in the thermal conductivity to the value of 2.5 W/mK at room temperature was observed. With the power factor and thermal conductivity, the dimensionless figure of merit was increased with temperature and measured at 0.94 at 718 K for the compound synthesized by the induction melting process.

Fabrication and characterization of Mn-Si thermoelectric materials by mechanical alloying (MA법에 의한 Mn-Si계 초미세 열전재료의 제조 및 평가)

  • Lee, Chung-Hyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.6
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    • pp.246-252
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    • 2011
  • The semiconducting $MnSi_{1.73}$ compound has been recognized as a thermoelectric material with excellent oxidation resistance and stable characteristics at elevated temperature. In the present work, we applied mechanical alloying (MA) technique to produce $MnSi_{1.73}$ compound using a mixture of elemental manganese and silicon powders. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-$K{\alpha}$ radiation, thermal analysis and scanning electron microscopy. Due to the observed larger loss of Si relative to Mn during mechanical alloying of $MnSi_{1.73}$, the starting composition of a mixture Mn-Si was modified to $MnSi_{1.83}$ and then $MnSi_{1.88}$. The single $MnSi_{1.73}$ phase has been obtained by mechanical alloying of $MnSi_{1.88}$ mixture powders for 200 hours. It is also found that the grain size of $MnSi_{1.73}$ compound powders analyzed by Hall plot method is reduced to 40 nm after 200 hours of milling.

c-axis Tunneling in Intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ Single Crystals

  • Lee, Min-Hyea;Chang, Hyun-Sik;Doh, Yong-Joo;Lee, Hu-Jong;Lee, Woo;Choy, Jin-Ho
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.260-260
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    • 1999
  • We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

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Ferromagnetism and Magnetotransport of Be-codoped GaMnAs (Be-codoped GaMnAs의 상온 강자성 및 자기 수송 특성)

  • Im, W.S.;Yu, F.C.;Gao, C.X.;Kim, D.J.;Kim, H.J.;Ihm, Y.E.;Kim, C.S.
    • Journal of the Korean Magnetics Society
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    • v.14 no.6
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    • pp.213-218
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    • 2004
  • Be-codoped GaMnAs layers were systematically grown via molecular beam epitaxy with varying Mn- and Be-flux. Mn flux was controlled to cover from solid solution type GaMnAs to precipitated GaMnAs. Two Be flux were chosen to exhibit semiconducting and metallic resistivity in the grown layers. The structural, electrical, and magnetic properties of GaAs:(Mn, Be) were investigated. The lightly Be-codoped GaMnAs layers showed ferromagnetism at room temperature, but did not reveal magnetotransport due to small magneto-resistance and high resistance of the matrix. However, room temperature magnetotransport could be observed in the degenerate Be-codoped GaMnAs layers, and which was assisted by the high conductivity of the matrix. The Be-codoping has promoted segregation of new ferromagnetic phase of MnGa as well as MnAs.

An Effect of Fe2O3 Additive on a Seebeck Coefficient and a Power Factor for SmCoO3 Perovskite System (SmCoO3 페롭스카이트 계 열전소재에서 Fe2O3 첨가제가 출력인자에 미치는 영향)

  • Jung, Kwang-Hee;Choi, Soon-Mok;Seo, Won-Seon;Park, Hyung-Ho
    • Journal of the Korean Ceramic Society
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    • v.47 no.5
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    • pp.457-460
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    • 2010
  • $SmCoO_3$ system was investigated for their application to themoelectric materials. All specimens showed p-type semiconducting behavior and their electrical conductivity ($\sigma$), Seebeck coefficient (S) and power factor were measured at high temperature. And the effect of dopant ions on their thermoelectrical properties were also investigated. $Fe^{3+}$ ion doped into $Co^{3+}$ site enhanced the Seebeck coefficient and decreased the electrical conductivity simultaneously. The maximum Seebeck coefficient value for 60% doping case reached to 780 ${\mu}V$/K at $240^{\circ}C$. However $Fe^{3+}$ doped system cause an negative effect on power factor value. In case of the pure phase, the maximum Seebeck coefficient value reached to 290 ${\mu}V$/K at $240^{\circ}C$ and the maximum electrical conductivity was obtained 748 1/(ohm$\times$cm) at $960^{\circ}C$. As a result, the maximum power factor was obtained $1.49\times10^{-4}$ W/$mK^2$ at $550^{\circ}C$.

Variation in optical, dielectric and sintering behavior of nanocrystalline NdBa2NbO6

  • Mathai, Kumpamthanath Chacko;Vidya, Sukumariamma;Solomon, Sam;Thomas, Jijimon Kumpukattu
    • Advances in materials Research
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    • v.2 no.2
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    • pp.77-91
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    • 2013
  • High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

Separation of Single-Wall Carbon Nanotubes by Agarose Gel (아가로스 겔을 이용한 단일벽 탄소나노튜브 분리)

  • Yu, Lan;Lim, Yun-Soo;Han, Jong-Hun
    • Applied Chemistry for Engineering
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    • v.22 no.3
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    • pp.272-276
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    • 2011
  • The separation of metallic and semiconducting single-wall carbon nanobubes (SWCNTs) by agarose gel method was carried out in this study. The effect of concentration of agarose, SDS (sodium dodecyl sulfate), and pH in the solution on separation behavior was investigated. With increasing the concentration of agarose in the solution, it showed that the ratio of metallic SWCNTs, which was analyzed from UV-vis-NIR spectroscopy, was increased in the solution phase, while the overall concentration of SWCNTs was decreased. With increasing the concentration of SDS, we could observe that the ratio of metallic SWCNTs was increased due to more affinity between SDS molecules and metallic SWCNT. The highest metallic SWCNTs ratio was reached up to 58.4% when the pH of solution was 8.2.

Material and Sensing Properties of SnO2 prepared by Sol-Gel Methods (Sol-Gel법에 의한 SnO2의 물성 및 센싱 특성)

  • Park, Bo-Seok;Hong, Kwang-Joon;Kim, Ho-Gi;Park, Jin-Seoung
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.327-334
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    • 2002
  • Fine particles of $SnO_2$ were fabricated by the sol-gel powder processing using tine(II) chloride dihydrate($SnCl_2{\cdot}2H_2O$) and ethanol($C_2H_5OH$) as raw materials. The powders were investigated about the properties and electrical sensing. Gel powders were fabricated by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_2$ phase was increased below $600^{\circ}C$ due to the elimination of volatile components, and the $SnO_2$ phase was almost completed by the heat treatment at $700^{\circ}C$ for 30min. The grain sizes were about 30nm below $700^{\circ}C$, and it showed the narrow distribution of the grain sizes. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_2$ was showed the intrinsic behaviour of semiconducting ceramics above at $450^{\circ}C$. The constant conductance was observed in the temperature range of $200{\sim}450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.