• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.4 s.235
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• pp.632-638
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• 2005

The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1508-1511
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• 1996

In the fields of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in submicron range. In this study, dielectric properties of 0.5PNN-(0.5-x)PZN-xPZT system ceramics with different PZT mole ratio were investigated. As the amount of PZT incerases, curie temperature was increased. The maximum of dielectric and piezoelectric constant was shown at 0.3 mole ratio of PZT amount. As a results, we have found that the structrue of ceramics with PZT 0.3 mole was morphotropic phase boundary.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.42-48
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• 1988

Commercially available PTCR (Postive Temperature Coefficient of Resistivity) ceramics which have low room temperature resistance, high PTC effect and temperature coefficient were prepared by La3+ doped semiconducting barium calcium titanate soild solutions. PTCR characteristics were remarkably improved by addition of AST (1/3 Al2O3$.$3/4SiO2$.$1/4TiO2) and MnCl2. That can be explained by formation of liquid phase during sintering and acceptor level on the intergranular layer. Resistivity anormaly increased with decreasing cooling rate. Optimum manufacturing conditions were cooling rate below 100$.$C/hr, Ca and Mn content of 4 mol% &, 0.09-0.12mol% respectively.

• Bulletin of the Korean Chemical Society
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• v.16 no.9
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• pp.870-873
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• 1995

A new ternary transition-metal selenide, Ta2Ni3Se8 has been synthesized from a eutectic halide flux. The structure of this phase has been characterized by single crystal X-ray diffraction techniques. The compound crystallizes in the orthorhombic system (D2h9-Pbam, a= 14.788(4) Å, b= 10.467(3) Å, c=3.4563(8) Å) with two formula units in the unit cell. This compound adopts the Nb2Pd3Se8 structure type. Hence, there are two chains of edge-sharing selenium trigonal prisms centered by tantalum atoms and these chains are interconnected through two kinds of nickel atoms. Nickel occupies both square planar and square pyramidal sites as does palladium in Nb2Pd3Se8. Electrical conductivity measurements indicate that this material is semiconducting.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.817-821
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• 2008

We have investigated the influence of the crystal structure on the chemical bonding nature and photocatalytic activity of cubic and hexagonal perovskite A[$Cr_{1/2}Ta_{1/2}$]O3 (A = Sr, Ba) compounds. According to neutron diffraction and field emission-scanning electron microscopy, the crystal structure and particle size of these compounds are strongly dependent on the nature of A-site cations. Also, it was found that the face-shared octahedra in the hexagonal phase are exclusively occupied by chromium ions, suggesting the presence of metallic (Cr-Cr) bonds. X-ray absorption and diffuse UV-vis spectroscopic analyses clearly demonstrated that, in comparison with cubic Sr[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase, hexagonal Ba[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase shows a decrease of Cr oxidation state as well as remarkable changes in interband Cr d-d transitions, which can be interpreted as a result of metallic (Cr-Cr) interactions. According to the test of photocatalytic activity, the present semiconducting materials have a distinct activity against the photodegradation of 4-chlorophenol. Also the Srbased compound was found to show a higher photocatalytic activity than the Ba-based one, which is attributable to its smaller particle size and its stronger absorption in visible light region.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1106-1112
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• 2003

For the purpose of making clear the role of oxygen in the thermoelectric properties of FeSi$_2$, thermoelectric measurements and spectroscopic characterization were conducted for the oxidized specimens fabricated from ($\alpha$+$\varepsilon$)-phases and/or $\beta$-phase. Addition of oxygen to FeSi$_2$ prevented both densification during sintering and transformation from metallic phases to semiconducting phase during annealing treatment. In an specimens, electrical conductivity and thermal conductivity decreased with oxidation time. The Seebeck coefficient was positive and small for pure FeSi$_2$. And/or the oxidized specimens fabricated from ($\alpha$+$\varepsilon$)-phases. However, it was negative and showed a maximum peak at about 500 K for the oxidized FeSi$_2$ fabricated from $\beta$-phase. The value of maximum peak increased with oxidation time.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.132-136
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• 2001

Iron- silicide has been produced by mechanical alloying process and consolidated by hot pressing. As-consolidated iron silicides were consisted of $\beta$-FeSi$_2$ phase, and untransformed mixture of $\alpha$-$Fe_2Si_5$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting $\beta$-$FeSi_2$ phase. The condition for $\beta$-FeSi$_2$ transformation was investigated by utilizing DTA, SEM, TEM and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at $830^{\circ}C$ for 24 hours. The mechanical and thermoelectric properties of $\beta$-FeSi$_2$ materials before and after isothermal annealing were characterized in this study.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.14-14
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• 2009

High frequency electromagnetic(EM) waves are increasingly being applied in industries because of saturationat lower frequency bands as a result of huge demand. However, electromagneticinterference (EMI) has become a serious problem, and as a result, highfrequency EM absorbers are now being extensively studied. Also, recentdevelopments in absorber technology have focused on producing absorbers thatare thin, flexible, and strong. Hence, one-dimension ferrous nano-materials area potential research field, because of their interesting electronic andmagnetic properties. Commercially, EM wave absorbing products are made ofcomposites, which blend the insulating polymer with magnetic fillers. Inparticular, the shape of the magnetic fillers, such flaky, acicular, or fibrousmagnetic metal particles, rather than spherical, is essential for synthesizingthin and lightweight EM wave absorbers with higher permeability. High aspectratio materials exhibit a higher permeability value and therefore betterabsorption of the EM wave, because of electromagnetic anisotropy. Nanowires areusually fabricated by drawing, template synthesis, phase separation, selfassembly, and electrospinning with a thermal treatment and reduction process.Producing nanowires by the electrospinning method involves a conventionalsol-gel process that is simple, unique, and cost-effective. In thispresentation, Magnetic nanowire and dielectric materials coated magneticnanowire with a high aspect ratio were successfully synthesized by theelectrospinning process with heat treatment and reduction. In addition toestimating the EM wave absorption ability of the synthesized magnetic anddielectric materials coated magnetic nanowire with a network analyzer, weinvestigated the possibility of using these nanowires as high-frequency EM waveabsorbers. Furthermore, a wide variety of topics will be discussed such as thetransparent conducting nanowire and semiconducting nanowire/tube with theelectrospinning process.