• 제목/요약/키워드: Semiconducting layer

검색결과 101건 처리시간 0.032초

전력 케이블에서 반도전층의 역할과 요구 특성 (The functions & Requirements of the Semi-Conducting layer in the power cable.)

  • 정윤택;남종철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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    • pp.101-105
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    • 2001
  • 고압용 가교 Polyethylene 절연 케이블의 도체와 절연체 사이, 절연체와 외부 차폐층 사이에는 계면에서의 부분방전을 방지하고 전기적 스트레스를 완화할 목적으로 반도전층이 설계되어 있다. 이 반도전층의 성질은 케이블의 품질과 신뢰성에 매우 중요한 관련이 있다. 일반적으로 반도전층은 압출 성형하는데 Base Polymer에 다량의 카본블랙을 혼합하여 도전화 한다. 절연층과 반도전층간 계면의 평활도는 전력 케이블의 수명과 깊은 관계가 있는데 만약 평활도가 좋지 않으면 전기적 Stress 가 증가하여 전선 수명이 짧아진다. 계면 평활도를 나쁘게 하는 주 요인은 계면의 Void, 반도전층의 돌기와 이물, 탄화물 등이다. 반도전 Compound 제조에 있어서 Carbon Black의 선택과 분산성은 전선수명을 결정하는 중요한 요소이다.

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ZnO 바리스터의 유전특성과 등기회로 (Dielectric Properties and a Equivalent Circuit of ZnO-Based Varistor)

  • 노일수;강대하
    • 전기학회논문지
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    • 제56권12호
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    • pp.2166-2172
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    • 2007
  • In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

Direct Writing of Semiconducting Oxide Layer Using Ink-Jet Printing

  • Lee, Sul;Jeong, Young-Min;Moon, Joo-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.875-877
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    • 2007
  • Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the $mobility\;{\sim}\;0.01\;cm^2V^{-1}s^{-1}$. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication.

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Electrical Properties and Temperature Effects of PET Films with Interface Layers

  • Dong-Shick kim;Lee, Kwan-Woo;Park, Dae-Hee;Lee, Jong-Bok;Seun Hwangbo
    • Transactions on Electrical and Electronic Materials
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    • 제1권4호
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    • pp.25-29
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    • 2000
  • In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

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코로나 방전처리에 의한 반도전-절연 실리콘 고무의 표면특성 및 접착특성 (Surface Properties and Adhesion of Semiconducting and Insulating Silicone Rubber by Corona Discharge Treatment)

  • 이기택;황선묵;홍주일;허창수
    • 한국전기전자재료학회논문지
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    • 제19권9호
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    • pp.868-872
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    • 2006
  • In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and C-OH on semiconducting silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiOx,\;x=3{\sim}4$. The Corona treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength.

전력용 케이블의 XLPE와 반도전 재료의 유전특성 (Dielectric Characteristics of XLPE and Semiconductive Materials for Power Cable)

  • 성민우;김정훈;이인성;조경순;이수원;홍진웅
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.73.1-76
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    • 2000
  • The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment, development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature 25~10$0^{\circ}C$ and frequency 20~1[MHz].

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$SrTiO_3$ 바리스터의 전기적 등가회로 (Electric equivalent circuit of $SrTiO_3$-based varistor)

  • 강대하;노일수
    • Journal of Advanced Marine Engineering and Technology
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    • 제30권8호
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    • pp.907-918
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    • 2006
  • In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

Fabrication of Organic-Inorganic Nanohybrid Semiconductors for Flexible Electronic Device

  • 한규석;정희찬;권덕현;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.114-114
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    • 2011
  • We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

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Nanostructuring of Semi-conducting Block Copolymers: Optimized Synthesis and Processing for Efficient Optoelectronic Devices

  • Hadziioannou, Georges
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.74-75
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    • 2006
  • In organic opto-electronic applications, such as light emitting diodes (LEDs) and photovoltaic devices (PVDs), the morphology of the active layer is of crucial importance. To control the morphology of the active layer the self-assembling properties of block copolymers was used. Several rod-coil semiconducting diblock copolymers consisting of a conjugated block and a second coil block functionalized with electron transporting and/or accepting materials (such as $C_{60}$) were synthesized. The conjugated block acting as light absorbing, electron donating and hole transporting material. The donor/acceptor photovoltaic devices performance with active layer the above mentioned semiconducting block copolymers will be presented.

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22kV CV케이블에 있어서 절연열화현상의 고찰 (A Study on Insulation Degradation Phenomena in 22kV CV Power Cable)

  • 강무성;김동식;정성룡;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1797-1800
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    • 1996
  • In this study, the insulation selected in degra-dated-power cable has been observed and aging process about the insulation has been investigated. Most Insulation aging process initiates in the interface of semiconducting layer and the type of the process is the fractal form that was observed between the the semiconducting layer and insulation layer. It is possible to estimate degree of the degration of cable with breakdown test and obtained data have been used to get parameters in order to use Weibull distribution. With this method it is considered to be possible to estimate situation of degration and life prediction.

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