• 세라미스트
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• 제22권1호
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• pp.96-106
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• 2019

Semiconducting carbon-based nanomaterials including single-walled carbon nanotubes(SWCNTs), multi-walled CNT(MWCNTs), graphene(GR), graphene oxide(GO), and reduced graphene oxide(RGO), are very promising sensing materials due to their large surface area, high conductivity, and ability to operate at room temperature. Despite of these advantages, the semiconducting carbon-based nanomaterials intrinsically possess crucial disadvantages compared with semiconducting metal oxide nanomaterials, such as relatively low gas response, irreversible recovery, and poor selectivity. Therefore, in this paper, we introduce a variety of strategies to overcome these disadvantages and investigate principle parameters to improve gas sensing performances.

• Carbon letters
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• 제9권1호
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• pp.17-22
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• 2008

A carbon nanotube (CNT) of diameter ~20 nm has been synthesized by spray pyrolysis of turpentine oil using Ni/Fe catalyst. Pellet of CNTs has been used as a target to produce semiconducting carbon thin film of band gap 1.4 eV. Presence of oxygen pressure in the pulse laser deposition (PLD) chamber helped to control the $sp^3/sp^2$ ratio to achieve the desired band gap. Results are discussed with the help of Raman spectra, SEM TEM micrographs and optical measurements suggest that semiconducting carbon thin film deposited by PLD technique has retained its nanotubes structure except that its diameter has increased from 20 nm to 150 nm.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권10호
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• pp.443-448
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• 2005

To measure modulus, damping properties and smoothness of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm$^{2}$]. The content of conductive carbon black was the variable, and their contents were 20, 30 and 40[wt$\%$], respectively. The modulus and tans were measured by DMA 2980. The ranges of measurement temperature were from -50[$^{\circ}C$] to 100[$^{\circ}C$] and measurement frequency was 1[Hz3. The modulus of specimens was increased according to a increment of a carbon black content. And modulus was rapidly decreased at the glass transition temperature. The tans of specimens was decreased according to a increment of a carbon black content. The smoothness was measured by JSM-6400. EEA resin from SEM measurement was best the dispersion of carbon back in base resin.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.218-219
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• 2006

To Smoothness of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black and Carbon Nanotube. Then they were produced as sheets after pressing for 20 minutes at $180^[{\circ}C]$ with a pressure of $200[kg/cm^2]$. The content of conductive carbon black and Carbon Nanotube was the variable, and their contents were 20-40[wt%] and 2-6[wt%] respectively. The smoothness was measured by JSM-6400.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.28-29
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• 2006

To improve Mechanical and Thermal Properties of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black and Carbon Nanotube. Density were measured by EW-200SG. High temperature, heat degradation initiation temperature, and heat weight loss were measured by TGA (Thermogravimetric Analysis). The dimension of measurement temperature was $0[^{\circ}C]$ J to $700[^{\circ}C]$, and rising temperature was $10[^{\circ}C/min]$. Heat degradation initiation temperature from the TGA results was decreased according to increasing the content of Carbon Nanotube. That is, heat stabilities of EVA containing the weak VA (vinyl acetate) against heat was measured the lowest. From the results of the experiment applied in this study, it is evident that a small amount of Carbon nanotube additives significantly improved the Mechanical and Thermal Properties of semiconducting materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.101-105
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• 2001

고압용 가교 Polyethylene 절연 케이블의 도체와 절연체 사이, 절연체와 외부 차폐층 사이에는 계면에서의 부분방전을 방지하고 전기적 스트레스를 완화할 목적으로 반도전층이 설계되어 있다. 이 반도전층의 성질은 케이블의 품질과 신뢰성에 매우 중요한 관련이 있다. 일반적으로 반도전층은 압출 성형하는데 Base Polymer에 다량의 카본블랙을 혼합하여 도전화 한다. 절연층과 반도전층간 계면의 평활도는 전력 케이블의 수명과 깊은 관계가 있는데 만약 평활도가 좋지 않으면 전기적 Stress 가 증가하여 전선 수명이 짧아진다. 계면 평활도를 나쁘게 하는 주 요인은 계면의 Void, 반도전층의 돌기와 이물, 탄화물 등이다. 반도전 Compound 제조에 있어서 Carbon Black의 선택과 분산성은 전선수명을 결정하는 중요한 요소이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.236-237
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• 2006

We have investigated volume resistivity showed by changing the content of Carbon nanotube and carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the six of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both $23{\pm}1[^{\circ}C]$ and $90{\pm}1[^{\circ}C]$. The volume resistivity decreased by adding Carbon nanotube and carbon black. Also the volume resistivity had different properties because of PTC/NTC tendencies at between $23[^{\circ}C]$ and $90[^{\circ}C]$. We experimented with electric properties of semiconducting components with fewer Carbon nanotube than carbon black.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.236-237
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• 2005

To measure surface roughness and smoothness of semiconducting materials in power cable, we have investigated the formation and growth process of carbon black showed by changing the content of carbon black. The specimens were primarily kneaded in material samples of pellet form for 5 minutes on rollers ranging between 70[$^{\circ}C$] and 100[$^{\circ}C$]. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm]. The contents of conductive carbon black were the variable, and their contents were 20, 30 and 40[wt%], respectively. The surface roughness and smoothness of specimens were measured by SEM and AFM. From SEM experimental result, carbon black in specimens formed matrix as a particles. Also we showed growth process of carbon black according to an increment of the content of carbon black. From AFM experimental result, surface roughness of specimens decreased according to an increment of the content of carbon black.

• 대한기계학회논문집A
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• 제30권2호
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• pp.179-186
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• 2006

Dielectrophoresis has received considerable attention for separating nanotubes according to electronic types. Here we examine the effects of surface conductivity of semiconducting single-walled carbon nanotubes (SWNT), induced by ionic surfactants, on the sign of dielectrophoretic force. The crossover frequency of semiconducting SWNT increases rapidly as the conductivity ratio between the particle and medium increases, leading to an incomplete separation of ionic surfactant suspended SWNT at an electric field frequency of 10 MHz. The surface charge of SWNT is neutralized by an equimolar mixture of anionic surfactant sodium dodecyl sulfate (SDS) and cationic surfactant cetyltrimenthylammonium bromide (CTAB), resulting in negative dielectrophoresis of semiconducting species at 10 MHz. A comparative Raman spectroscopy study shows a nearly complete separation of metallic SWNT.

• Carbon letters
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• 제6권2호
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• pp.96-100
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• 2005

Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (${\leq}$ $750^{\circ}C$) and lower time of sintering (${\leq}$ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.