• Title/Summary/Keyword: Self-plasma Ignition Time

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Improved Self Plasma-Optical Emission Spectroscopy for In-situ Plasma Process Monitoring (실시간 플라즈마공정 모니터링을 위한 Self Plasma-Optical Emission Spectroscopy 성능 향상)

  • Jo, Kyung Jae;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.75-78
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    • 2017
  • We reports improved monitoring performance of Self plasma-optical emission spectroscopy (SP-OES) by augmenting a by-pass tube to a conventional straight (or single) tube type self plasma reactor. SP-OES has been used as a tool for the monitoring of plasma chemistry indirectly in plasma process system. The benefits of SP-OES are low cost and easy installation, but some semiconductor industries who adopted commercialized SP-OES product experiencing less sensitivity and slow sensor response. OH out-gas chemistry monitoring was performed to have a direct comparison of a conventional single type tube and a by-pass type tube, and fluid dynamic simulation on the improved hardware design was also followed. It is observed faster pumping out of OH from the chamber in the by-pass type SP-OES.

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Measurement of a Threshold Initiation Carrier Density for a Reduction in Gas Breakdown Voltage

  • Park, Hyunho;Kim, Youngmin
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2421-2424
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    • 2018
  • A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.