• Journal of Biosystems Engineering
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• v.21 no.3
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• pp.306-314
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• 1996

A seeder monitoring system was developed to solve the problems of mis-sowing and tube clogging in direct seeding machines, which have been one of the factors that reduce the performance of sowing operations. The system consisted of photo sensors, air nozzles, an air compressor, and a one-chip micro-computer based controller. The system was also equipped with the devices that perform the functions of self-checking and intermittent air injection for cleaning seed tubes. The performance of the system was tested in the laboratory and field. Using the well-cleaned rice seed, the average time for checking the mis-sowing was 1.37 seconds in the field and 1.2 seconds in the laboratory without any malfunction. Overall evaluation of the system indicated that the system can be utilized for seeding machines not only for paddies but beans and corns.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.143-148
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• 2002

Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.627-629
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• 2004

본 연구는 자기정렬 방법을 기존의 방식과 다르게 적용하여 수소화 된 비정질 실리콘 박막 트랜지스터의 제조공정을 단순화하고, 박막 트랜지스터의 게이트와 소오스-드레인간의 기생용량을 줄인다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다 실험 방법은 게이트전극, 절연층, 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si:H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si:H 층을 식각하고, 남아있는 NPR층을 제거한다. 그 위에 Cr층을 증착한 후 패터닝 하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 이렇게 제조하면 기존의 박막 트랜지스터에 비하여 특성은 같고, 제조공정은 줄어들며, 또한 게이트와 소오스-드레인간의 기생용량이 줄어들어 동작속도를 개선시킬 수 있다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.985-991
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• 2000

In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.

• The Journal of the Convergence on Culture Technology
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• v.3 no.4
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• pp.117-122
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• 2017

North Korean youth is a youth aged 6 to 18 who lives in a South Korean society after having left North Korea. In this study, photo-in-education (PIE) provides North Korean youths with opportunities for cultural and arts education, and to help them adjust themselves to South Korean society. As a result, they, as young people who are exploring a new life in South Korea, have been able to express their own inner world through photos, videos, and writings. Also, young people have developed a bright and clear mind, and enhanced an expressive power and logical power that helps grow healthily and intelligently. Further, it is the aim of this education to help them to have a positive feeling for society and to do their best to become a healthy member of society, who will be able to contribute to society. Through PIE, it was found that North Korean defectors were able to see themselves positively and express their own inner self positively, despite that they are still in the negative and shady side of life.

• 한국생물공학회:학술대회논문집
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• 2003.04a
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• pp.74-78
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• 2003

Multi-channel images of 11-MUA and 11-MUOH self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. Patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each points on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in sub-nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching which are common in the detection methods based on the fluorescence.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.189-189
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• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.354-359
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• 2006

Recently, the interest in lithography without photo exposure has been increased compare to the conventional photolithography in nano meter and micrometer size patterning area. We studied a self aligned dipping of Ag solution through micro contact printing (${\mu}-CP$) with octadecyltrichlorosilane (OTS) treated polydimethylsiloxane (PDMS) soft mold. The OTS monolayer on the patterned PDMS was formed by dipping it into OTS solution. We transferred the OTS monolayer from PDMS mold to the glass. The OTS monolayer changed the surface energy from hydrophilic surface to hydrophobic surface, And then we made self aligned Ag solution patterns just after dipping the substrate, using adhesion difference of Ag solution between OTS treated hydrophobic area and non-OTS treated hydrophilic area. We finally get the Ag patterns through only dip-coating after the ${\mu}-CP$ process. And we observed surface energies on the glass substrate through the contact angle measurements as time goes on.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.545-550
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• 2011

We have synthesized a high electrically conductive 4-(2-(4-(acetylthio)phenyl)ethynyl)benzoic acid (APBA) with a conjugated aromatic structure as a bio fix linker, and then fabricated APBA self-assembled monolayer (SAM) with a self-assembly technique. The structure of the prepared APBA SAM was studied and electrochemical properties of APBA SAM immobilized with a ferrocene molecule were investigated. Also, we have examined the molecular orientation and oxidation-reduction redox characteristics of the mixed SAM consisting of APBA and butanethiol (BT) with a X-ray photo electron spectroscopy (XPS) and cyclicvoltammetry, respectively. Electrochemical activity of the mixed SAM was increased with increasing the mixed time. Especially, the maximum redox current was obtained at a mixed time of 36 hrs.