• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.518-524
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• 2014

The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1067-1072
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• 2014

In this study, we report a new approach for $Mn_3O_4$-graphene nanocomposite by ex situ method. This nanocomposite shows two-dimensional aggregation of nanoparticle, and doping effect by decorated manganese oxide ($Mn_3O_4$), as well. The graphene film was made through micromechanical cleavage of graphite on the $SiO_2/Si$ wafer. Manganese oxide ($Mn_3O_4$) nanoparticle with uniform cubic shape and size (about $5.47{\pm}0.61$ nm sized) was synthesized through the thermal decomposition of manganese(II) acetate, in the presence of oleic acid and oleylamine. The nanocomposite was obtained by self-assembly of nanoparticles on graphene film, using hydrophobic interaction. After heat treatment, the decorated nanoparticles have island structure, with one-layer thickness by two-dimensional aggregations of particles, to minimize the surface potential of each particle. The doping effect of $Mn_3O_4$ nanoparticle was investigated with Raman spectra. Given the upshift in positions of G and 2D in raman peaks, we suggest that $Mn_3O_4$ nanoparticles induce p-doping of graphene film.

• Journal of Magnetics
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• 제20권2호
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• pp.97-102
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• 2015

The waste of sintered Nd-Fe-B magnets was recycled using the method of dopingPrNd nanoparticles. The effect of PrNd nanoparticle doping on the magnetic properties of the regenerated magnets has been studied. As the content of the PrNd nanoparticles increases, the coercivity increases monotonically, whereas both the remanence and the maximum energy products reach the maximum values for 4 wt% PrNd doping. Microstructural observation reveals that the appropriate addition of PrNd nanoparticles improves the magnetic properties and refines the grain. Domain investigation shows that the self-pinning effect of the rare earth (Re)-rich phase is enhanced by PrNd nano-particle doping. Compared to the magnet with 4 wt% PrNd alloy prepared using the dual-alloy method, the regenerated magnet doped with the same number of PrNd nanoparticles exhibits better magnetic properties and a more homogeneous microstructure. Therefore, it is concluded that PrNd nanoparticle doping is an efficient method for recycling the leftover scraps of Nd-Fe-B magnets.

• 한국진공학회지
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• 제12권S1호
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• pp.36-39
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• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• 전자공학회논문지D
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• 제36D권11호
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• pp.56-62
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• 1999

Flash EEPROM에서 칩 전체나 또는 칩의 한 블록에 속에 있는 모든 셀들의 소거는 Fowler-Nordheim (FN) 터널링 방식을 사용하여 일괄적으로 수행되고 있다. 이러한 FN 터널링에 의한 소거는 self-limited 공정이 아니기 때문에 일부의 셀들이 심하게 과소거되는 문제가 자주 발생하고 있다. 본 논문에서는 이러한 과소거 문제를 해결하기 위한 부유게이트의 최적 도핑 농도에 관하여 연구하였다. 이러한 연구를 위하여 다양한 도핑 농도를 갖는 n-type MOSFET과 MOS 커패시터를 제작하였고, 이 소자들의 전기적인 특성들을 측정 및 분석하였다. 실험 결과, 부유게이트의 도핑 농도가 충분히 낮다면 ($1.3{\times}10^{18}/cm^3$ 이하) 과소거가 방지될 수 있음을 볼 수 있었다. 이는, 소거시 부유게이트에 저장되었던 전자들의 대부분이 빠져나가면 부유게이트에 공핍층이 형성되어 부유게이트와 소스 사이의 전압 차가 감소하고 따라서 소거가 자동적으로 멈추기 때문이라고 판단된다. 반면에 부유게이트의 도핑 농도가 너무 낮을 경우 ($1.3{\times}10^{17}/cm^3$ 이하)에는 문턱 전압과 gm의 균일도가 크게 나빠졌는데, 이는 부유게이트에서 segregation으로 인한 불순물의 불균일한 손실에 의한 것이로 판단된다. 결론적으로 Flash EEPROM에서 과소거 현상을 방지하고 균일한 문턱 전압과 gm을 갖기 위한 최적의 부유게이트의 도핑 농도는 $1.3{\times}10^{17}/cm^3$에서 $1.3{\times}10^{18}/cm^3$의 범위인 것으로 발견되었다.

• 한국재료학회지
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• 제29권9호
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• pp.542-546
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• 2019

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.374-374
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• 2009

We have fabricated pure YBCO films and $BaZrO_3$ doped ones on $CeO_2$ buffered YSZ single crystal substrates using rf-sputtering method. In this work, pure YBCO and 2 vol% BZO doped YBCO target were used to investigate the flux pinning properties of BZO doped YBCO films compared to undoped ones. BZO nanodots within the superconducting materials was known to comprise the self-assembled columnar defects along the c-axis from the bottom of YBCO films up to the top surface, thus can be a very strong pinning sites in the applied magnetic field parallel to them. We will discuss the possibility of growing self-assembled columnar defects in the rf-sputtering method. It is speculated that BZO and YBCO phases can separate and BZO form nanodots surrounded by YBCO epitaxial layers and continuous phase separation and ordering between these two materials, which was well studied in Pulsed Laser Deposition method. For this purpose, some severe experimental conditions such as on-axis sputtering, shorter target-substrate distance, high rf-power, etc was adopted and their results will be presented.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2000년도 추계학술발표대회 및 bio-venture fair
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• pp.707-708
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• 2000

Membrane strip 면역 크로마토그래피 방법을 이용하여 정량분석을 수행하기 위해 스크린프린팅 기술에 의해 제작된 membrane 전극 상에 항체를 고정화하였고 신호발생물질로써 전도성고분자인 polyaniline이 결합된 colloidal gold를 사용하였다. 이때 사용이 적합한 전도성 고분자는 수용액에 대해 용해도가 높아야 하고 또한 면역반응 최적조건인 중성 pH에서 전기전도도를 유지할 수 있어야 한다. 이를 위해 기존의 polyaniline을 $LiPF_6$로 doping 하거나 새로운 수용성 고분자인 LEB-SPAN을 사용하여 전기전도도 측정용 면역 gold를 합성하였다.