• Title/Summary/Keyword: Self-assembled Monolayer

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Use of Self Assembled Monolayer in the Cathode/Organic Interface of Organic Light Emitting Devices for Enhancement of Electron Injection

  • Manna, U.;Kim, H.M.;Gowtham, M.;Yi, J.;Sohn, Sun-young;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1343-1346
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    • 2005
  • Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

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고 진공 (UHV) 조건을 이용하여 구리 나노 분말에 도포한 1-octanethiol 기상 자기조립박막(SAMs)의 두께 조절에 관한 연구

  • Gwon, Jin-Hyeong;Kim, Dong-Gwon;No, Ji-Yeong;Park, Sin-Yeong;Lee, Tae-Hun;Yang, Jun-Mo;Lee, Seon-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.23.1-23.1
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    • 2010
  • Alkanethiol (CH3(CH2)nSH) 자기 조립 박막은 금, 은, 팔라듐 그리고 구리와 같은 금속 물질과 결합하여 산화 방지 보호막, 생화학적 멤브레인 그리고 케미컬 센서로 널리 이용되었다. 전도성을 가진 많은 금속 분말 중에서, 구리는 뛰어난 열, 전기 전도성과 풍부한 양으로 다른 귀금속에 비교하여 경제성까지 갖춘 물질이다. 그러나 이러한 구리 나노 분말은 대기에 노출된 구리 분말이 쉽게 산화된다는 결정적인 단점 때문에 그동안 널리 이용되지 못하였다. 이러한 구리의 단점을 극복하고 뛰어난 전도성의 특징을 이용하고자, Langmuir-Blodgett (LB), layer by layer (LbL), electrophoretic deposition (EPD), self-assembled monolayer (SAM)과 같은 구리 나노 분말 위에 유기 박막을 형성하고자 하는 많은 방법이 시도되어왔다. 이러한 방법들 대부분은 습식 방법으로 진행되었으며, 약 2-nm 두께의 SAM 구조를 형성할 수 있음이 많은 연구를 통하여 확인되었다. 그러나 습식 기반의 SAM 구조는 단지 수일 동안만 유효하며, 이는 코팅을 수행하면서 점차 떨어지는 source solvent의 순도와 적합하지 않은 코팅 조건, 그리고 이러한 원인으로 형성된 부실한 막질 구조 때문으로 추측된다. 게다가 이러한 습식 기반 공정은 코팅 막의 두께 조절과 코팅 시 solvent의 순도를 일정하게 유지하는 것이 매우 복잡하고 어려운 작업으로 알려져 왔다. 본 실험에서는 고 진공 챔버 (< $4.0{\times}10-6$ torr) 시스템을 이용하여 습식 기반 공정의 문제점을 극복하고 구리 나노 분말의 산화를 막기 위한 실험을 진행하였다. 1-octanethiol (CH3(CH2)7SH)은 중간 길이의 hydrocarbon (n=7) 구조를 가진 특징 때문에 코팅 물질로 사용되었다. 게다가, alkanethiol 족 특유의 물질인 황(sulfur)은 구리와 결합하여 산화방지 보호막의 역할을 수행할 수 있다. 저 진공 조건에서는 10-nm의 multilayer가 일괄적으로 코팅됨을 확인할 수 있었다. 본 실험에서는 약 10-nm 두께의 자기 조립 박막(self assembled monolayers: SAMs)이 고 진공 조건에서 구리 나노 분말 표면 위에 코팅 조건의 변경을 통해서 5-nm에서 10-nm 두께의 1-octanethiol SAMs 구조를 얻어낼 수 있었다. 이는 고 진공 조건에서 1-octanethiol SAMs의 코팅 두께를 조절함으로 다양한 크기의 분말에 코팅 물질로 쓰일 수 있음을 알 수 있다.

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Surface Characteristics of Silicon Substrates Coated with Octadecyltrichlorosilane (옥타데실트리클로로실란 코팅에 의한 실리콘 표면 특성 변화)

  • 유희재;김수경;김진홍;강호종
    • Polymer(Korea)
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    • v.27 no.6
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    • pp.555-561
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    • 2003
  • The self-assembled monolayer coating of octadecyltrichlorosilane (OTS) on the silicon based MEMS was investigated and surface characteristics were considered as a function of coating conditions and reagent composition. The sulfuric peroxide mixture (SPM) solution was used to form -OH group which caused the hydrophilic characteristic on silicon surftce. Highest hydrophilicity was obtained by SPM solution with 85% acid content at room temperature. OTS was applied on the silicon surface by means of self-assembled monolayers (SAMs) coating. It was found that sol-gel reaction was took place between -OH group on the silicon surface and -Cl group in OTS. As a result, the contact angle increased due to the increase of hydrophobicity by Si-O bonding of SAMs. Sol-gel reaction could be controlled by coating conditions as well as reagent composition in OTS coating solution.

Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties (Si 도핑이 InAs 자기조립 양자점 적외선 소자 특성에 미치는 효과)

  • Seo, Dong-Bum;Hwang, Je-hwan;Oh, Boram;Kim, Jun Oh;Lee, Sang Jun;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.29 no.9
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    • pp.542-546
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    • 2019
  • We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

Surface Modification of Functional Titanium Oxide to Improve Corrosion Resistance (내식성 향상을 위한 기능성 타이타늄 표면 개질)

  • Park, Youngju;Jeong, Chanyoung
    • Corrosion Science and Technology
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    • v.20 no.5
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    • pp.256-265
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    • 2021
  • Titanium is applied in various industries due to its valuable properties and abundant reserves. Generally, if a highly uniform oxide structure and a high-density oxide film is formed on the surface through anodization treatment, the utility value such as color appearance and corrosion inhibition efficiency is further increased. The objective of this study was to determine improvement of water-repellent property by controlling titanium oxide parameters such as pore size and inter-pore distance to improve corrosion resistance. Oxide film structures of different shapes were prepared by controlling the anodization processing time and voltage. These oxide structures were then analyzed using a Field Emission Scanning Electron Microscope (FE-SEM). Afterwards, a Self-Assembled Monolayer (SAM) coating was performed for the oxide structure. The contact angle was measured to determine the relationship between the shape of the oxide film and the water-repellency. The smaller the solid fraction of the surface, the higher the water-repellent effect. The surface with excellent hydrophobic properties showed improved corrosion resistance. Such water-repellent surface has various applications. It is not only useful for corrosion prevention, but also useful for self-cleaning. In addition, a hydrophobic titanium may open up a new world of biomaterials to remove bacteria from the surface.

The effects of non-condensable gas on condensation heat transfer on a super-hydrophobic surface tube (초소수성 코팅 튜브에서의 비응축가스 영향에 대한 응축 열전달 연구)

  • Ji, Dae-Yun;Kim, Daeho;Lee, Kwon-Yeong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.4
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    • pp.517-524
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    • 2018
  • This purpose of this research is to observe the influence of non-condensable gas (NCG) on a horizontal super-hydrophobic aluminum tube and compare it with a bare aluminum tube. To achieve super-hydrophobic characteristics, an aluminum tube was coated with a Self-Assembled Monolayer (SAM). The overall heat transfer coefficient U was used to represent the condensation performance. The NCG mass fraction was the main variable, and its range was 0.08 to 0.45. The condensation performance of the SAM tube and bare tube increased with decreasing mass fraction of NCG. The SAM tube showed 1.9 to 2.5 times larger dropwise condensation performance than the bare tube. When the mass fraction of NCG decreased in the SAM tube, the rate of increase of the SAM tube was lower because flooded condensation occurred. In addition, filmwise condensation occurred in the SAM tube when more active condensation was generated, and its performance was lower than that of the bare aluminum tube. The flooded and filmwise condensation in the SAM tube is explained by the pinning effect. In conclusion, controlling the condition of the condenser is necessary to improve the condensation performance by surface modification a SAM.

UV-nanoimprint Patterning Without Residual Layers Using UV-blocking Metal Layer (UV 차단 금속막을 이용한 잔류층이 없는 UV 나노 임프린트 패턴 형성)

  • Moon Kanghun;Shin Subum;Park In-Sung;Lee Heon;Cha Han Sun;Ahn Jinho
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.275-280
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    • 2005
  • We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

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Improvement of Operating Stabilities in Organic Field-Effect Transistors by Surface Modification on Polymeric Parylene Dielectrics (Parylene 고분자 유전체 표면제어를 통한 OFET의 소자 안정성 향상 연구)

  • Seo, Jungyoon;Oh, Seungteak;Choi, Giheon;Lee, Hwasung
    • Journal of Adhesion and Interface
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    • v.22 no.3
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    • pp.91-97
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    • 2021
  • By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μFET) and threshold voltage (Vth) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm2V-1s-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μFET values of 0.32 and 0.34 cm2V-1s-1, respectively. More important point is that the μFET and Vth of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

Molecular Conductance Switching Processes through Single Ruthenium Complex Molecules in Self-Assembled Monolayers

  • Seo, So-Hyeon;Lee, Jeong-Hyeon;Bang, Gyeong-Suk;Lee, Hyo-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.27-27
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    • 2011
  • For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

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Investigation of the Scanning Tunneling Microscopy Image, the Stacking Pattern and the Bias-voltage Dependent Structural Instability of 2,2'-Bipyridine Molecules Adsorbed on Au(111) in Terms of Electronic Structure Calculations

  • Suh, Young-Sun;Park, Sung-Soo;Kang, Jin-Hee;Hwang, Yong-Gyoo;Jung, D.;Kim, Dong-Hee;Lee, Kee-Hag;Whangbo, M.-H.
    • Bulletin of the Korean Chemical Society
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    • v.29 no.2
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    • pp.438-444
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    • 2008
  • A self-assembled monolayer of 2,2'-bipyridine (22BPY) molecules on Au(111) underwent a structural phase transition when the polarity of a bias voltage was switched in scanning tunneling microscopy (STM) experiments. The nature of two bright spots representing each 22BPY molecule on Au(111) in the high-resolution STM images was identified by calculating the partial density plots for a monolayer of 22BPY molecules adsorbed on Au(111) using tight-binding electronic structure calculations. The stacking pattern of the chains of 22BPY molecules on Au(111) was explained by examining the intermolecular interactions between the 22BPY molecules based on first principles electronic structure calculations for a 22BPY dimer, (22BPY)2. The structural instability of the 22BPY molecule arrangement caused by a change in the bias voltage switch was investigated by estimating the adsorbate-surface interaction energy using a point-charge approximation for Au(111).