• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.374-375
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• 2006

Three-dimensional artificial crystals with periodicity corresponding to terahertz wave lengths were fabricated by self-assembling monosized metal spherical particles. The metal crystals were weakly sintered to utilize them as templates. The metal templates were inverted to air spheres crystal embedded in dielectric resin though infiltration and etching. The resulting resin inverted crystals clearly presented the photonic stop gaps within terahertz wave region and the frequencies of the gaps were confirmed to agree well with calculation by plane wave expansion method.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제32회 추계학술대회 정기총회
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• pp.341-346
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• 2000

The effect of OTS(octadecyltrichlorosilane) SAM(self-assembled monolayer) on the micro-adhesion has been studied. OTS SAM was formed on the Si(100) surface and SPM (scanning probe microscope) tips with different radius of curvature were fabricated by a series of masking and etching processes. Pull-off forces of different tips on Si and OTS SAM surfaces were measured by SPM in different relative humidities. The surface of OTS SAM was changed to hydrophobic surface and the micro-adhesion force of OTS SAM was lower than that of pure Si. As the tip radius of curvature and the relative humidity increased. the micro-adhesion force increased. Based on the test results. the main parameter affected to the micro-adhesion was absorbed humidity on the surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• 한국정보전자통신기술학회논문지
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• 제15권4호
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• pp.243-248
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• 2022

본 논문은 SUS MASK을 FeCl3에 첨가제 (F300)를 첨가하여 에칭하는 것이 목적이다. 실험에 사용된 장비는 자체 제작된 자동 액 관리 시스템이다. 자동 액 관리 시스템은 비중(S.G)과 산화환원전위 (ORP)를 실시간으로 제어하고 FeCl3 및 첨가제를 정량 공급할 수 있는 장치이다. SUS MASK를 10장 단위로 200장까지 1분 동안 에칭하였다. 초기 SUS MASK가 10장 일 때 ORP 값이 628 mV로 시작하여 40장 투입할 때부터 611 mV로 측정되어 200장까지 610 mV에 가깝게 유지되는 것을 확인하였다. 또한 비중은 1.640 근처에서 유지되었다. 그리고 SUS MASK가 50장 이후부터 200장까지 0.4 mm에 근접하게 측정되었다. 실험은 ORP는 610 mV, 비중은 1.463, 에칭 압력은 3.0 kg/cm2, 첨가제 (F300) 비율은 1.2%로 하였고 한번 에칭할 때 10장씩 200장까지 하여 홀 크기를 측정하였다. 그 결과, 20장부터 직경이 0.4 mm에 근접하였다. SUS MASK 매수가 늘어나도 ORP 및 비중 조절이 잘 되었고 실험 목표치인 0.4 mm에 근접된 것을 확인하였다.

• 한국재료학회지
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• 제3권4호
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• pp.327-335
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• 1993

Helmholz구성을 가진 두개의 전자석에 의해 작동되는 RF cylindrical magnetron을 사용하여 이의 플리즈마 성질을 가한 자장의 함수로 조사하고, 또한 $CHF_3$와 $CF_4/H_2$를 3mTorr의 낮은 압력하에서 사용하여 실리콘의 반응성 이온 건식식각 특성을 조사하였다. 또한 여러 자장의 크기 및 개스 분위기하에서 식각한 실리콘으로 제조한 Schottky다이오드의 전류-전압 특성으로 식각으로 인한 실리콘의 손상정도를 측정하였다. Cylindrical magnetron에 가한 자장을 증가시킴에 따라 플라즈마내이온밀도 및 분해될 개스밀도(radical density)가 직선적으로 증가하였으며 시편이 위치한 전극에 유도되는 직류 자기 바이아스 전압(dc self-bais voltage)은, 반면, 지수적인 감소를 하였다. 100Gauss부근의 자장을 가한 경우에 최대의 식각속도를 갖고 이때의 실리콘의 식각속도가 자장을 가하지 않은 경우에 비해서 5배정도로 증가하였으며, 전지적인 특성 역시 습식방법을 사용하여 식각한 실리콘에 가까운 정도의 이온 손상이 없느 식각상태를 얻을 수 있었다.

• The Journal of Advanced Prosthodontics
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• 제10권3호
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• pp.177-183
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• 2018

PURPOSE. The purpose of the current study was to evaluate the effect of incorporating nanoparticles of silver (NAg) and amorphous calcium phosphate (NACP) into a self-etching primer of a resin cement on the microtensile bond strength of dentin, regarding the proven antibacterial feature of NAg and remineralizing effect of NACP. MATERIALS AND METHODS. Flat, mid-coronal dentin from 20 intact extracted human third molars were prepared for cementation using Panavia F2.0 cement. The teeth were randomly divided into the four test groups (n=5) according to the experimental cement primer composition: cement primer without change (control group), primer with 1% (wt) of NACP, primer with 1% (wt) of physical mixture of NACP+Nag, and primer with 1% (wt) of chemical mixture of NACP+Nag. The resin cement was used according to the manufacturer's instructions. After storage in distilled water at $37^{\circ}C$ for 24 h, the bonded samples were sectioned longitudinally to produce $1.0{\times}1.0mm$ beams for micro-tensile bond strength testing in a universal testing machine. Failure modes at the dentin-resin interface were observed using a stereomicroscope. The data were analyzed by one-way ANOVA and Tukey's post-hoc tests and the level of significance was set at 0.05. RESULTS. The lowest mean microtensile bond strength was obtained for the NACP group. Tukey's test showed that the bond strength of the control group was significantly higher than those of the other experimental groups, except for group 4 (chemical mixture of NACP and NAg; P=.67). CONCLUSION. Novel chemical incorporation of NAg-NACP into the self-etching primer of resin cement does not compromise the dentin bond strength.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.841-845
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• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• Restorative Dentistry and Endodontics
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• 제29권3호
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• pp.219-225
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• 2004

This study evaluated the microshear bond strength of composte resin to teeth bleached with commercial whitening strips and compared with those bleached with home bleaching gel. Twelve extracted human central incisors were cut into pieces and central four segments were chosen from each tooth and embedded in acrylic resin. Four blocks with 12 tooth segments embedded in acrylic resin were acquired and numbered from group one to group four. Group 1 was bleached with Crest Whitestrips, group 2 with Claren, group 3 with Opalescence tooth whitening gel (10％ carbamide peroxide). Group 4 was used as control. The bleaching procedure was conducted for 14 days according to the manufacturer's instructions ; the bleaching strips twice a day for 30 min and the bleaching gel once a day for 2hr. After bleaching, composite resin (Filtek Supreme) was bonded to the enamel surfaces with a self-etching adhesive (Adper Prompt L-Pop) using Tygon tube. Microshear bond strength was tested with a universal testing machine (EZ-test). The data were statistically analysed by one-way ANOVA. The study resulted in no statistical differences in microshear bond strength between the tooth segments bleached with 2 different whitening strips and bleaching gel. It can be concluded that the effect of bleaching with either commercial whitening strips or bleaching gel on enamel is minimal in bonding with self-etching adhesive to composite resin.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.68-69
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• 2005

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• 한국진공학회지
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• 제16권5호
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• pp.366-370
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• 2007

밀도가 높고 주기적으로 배열된 나노 크기의 기공이 25nm 두께의 실리콘 산화막 기판위에 형성 되었다. 나노미터 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성하였다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 나노크기의 마스크를 만들었다. 폴리스티렌으로 이루어진 나노패턴의 지름은 $8{\sim}30nm$ 였고 높이는 40nm였으며, 패턴과 패턴사이의 간격은 60nm였다. 형성된 패턴을 실리콘 산화막 위에 전사시키기 위해 불소 기반의 화학 반응성 식각을 사용하였다. 실리콘 산화막에 형성된 기공의 지름은 $9{\sim}33nm$였다. 실리콘 산화막을 불산으로 제거하여 실리콘에 형성된 기공을 관찰하였고, 실리콘기판에 형성된 기공의 지름은 $6{\sim}22nm$였다. 형성된 기공의 크기는 폴리메틸메타아크릴레이트의 분자량과 관계가 있음을 알 수 있었다.