• ETRI Journal
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• 제25권4호
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.124-127
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• 2010

We have fabricated organic white light emitting device by two colors from yellow fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) and blue phosphorescent material (iridum-bis(4,6-difluorophenylpyridinato-N,C2)-picolinate(FIrpic). The threshold voltage is 5.3 V, and the brightness reaches 1000 cd/$m^2$ at 11 V, 14.5 mA/$m^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 lm/W at 6 V, 0.1 mA/$m^2$.

• 공업화학
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• 제9권6호
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• pp.870-877
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• 1998

본 연구에서는 임피던스 스펙트럼 분석법을 사용하여 중성운반체로 dibenzo-18-crown-6 (D18Cr6)와 valinomycin (Val)을 이용하여 $K^+$이온선택성 PVC막 전극의 막과 용액계면에서의 임피던스 특성을 검토하였다. PVC막에 대한 운반체의 종류와 함량, 가소제, 막두께, 기본전해질의 혼입(doping)여부 및 이온의 농도변화 등을 교류임피던스 분석법을 이용하여 측정하였고, 그 결과를 전극특성과 비교 검토하고 PVC막 전극에서의 전달특성을 규명하였다. 교류 임피던스의 특성을 측정하여 중성운반체로 D18Cr6와 Val을 포함하고 있는 PVC막 전극의 등가회로는 막의 벌크저항과 전기이중층 용량을 포함하는 기하학적용량을 병렬로 하고, 용액저항과 직렬로 구성되는 임피던스의 등가회로임을 확인할 수 있었다. 그러나 저농도 및 저주파수 영역에서 약간의 전하전이저항과 Warburg저항이 나타나 중첩되는 것을 알 수 있었다. $K^+$이온선택성 전극에서 운반체로서 D18Cr6가 Val중 D18Cr6가 기존의 Val보다 전극특성 및 임피던스 특성이 좋았으며 특히 D18Cr6에 기본전해질로 potassium tetraphenylborate (TPB)를 첨가한 경우 이상적인 전극을 제조할 수 있었다. 운반체의 최적 함량은 D18Cr6와 Val의 경우 3.23wt%부근이었고, 가소제는 DBP가 가장 적절하였다. 막두께가 얇아질수록 임피던스 특성이 좋아졌으나, 막두께가 최적 막두께 이하로 얇아지면 전극특성이 나빠짐을 알 수 있었다. D18Cr6의 경우 $K^+$이온에 대한 혼합용액법에 의한 선택계수 서열은 다음과 같았다. $NH_4{^+}>Ca^{2+}>Mg^{2+}>Na^+$.

• 센서학회지
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• 제20권1호
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• pp.1-7
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• 2011

Undoped and Sb-doped $SnO_2$ nanofibers were prepared by electrospinning and their responses to $H_2$, CO, $CH_4$, $C_3H_8$, and $C_2H_5OH$ were measured. In the undoped $SnO_2$ nanofibers, the gas response ($R_a/R_g$, $R_a$: resistance in air, $R_g$: resistance in gas) to 100 ppm $C_2H_5OH$ was very high(33.9), while that to the other gases ranged from 1.6 to 2.2. By doping with 2.65 wt% Sb, the response to 100 ppm $C_2H_5OH$ was decreased to 4.5, whereas the response to $H_2$ was increased to 3.0. This demonstrates the possibility of detecting a high $H_2$ concentration with minimum interference from $C_2H_5OH$ and the potential to control the gas selectivity by Sb doping.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2364-2370
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• 2021

The ⁿMCP (Neutron sensitive microchannel plate) combined with advanced readout electronics is widely used in energy selective neutron imaging because of its good spatial and timing resolution. Neutron detection efficiency is a crucial parameter for the ⁿMCP. In this paper, a mathematical model based on the oblique cylindrical channel and elliptical pore was established to calculate the neutron absorption probability, the escape probability of charged particles and overall detection efficiency of ⁿMCP and analyze the effects of neutron incident position, pore diameter, wall thickness and bias angle. It was shown that when the doping concentration of the ⁿMCP was 10 mol%, the thickness of ⁿMCP was 0.6 mm, the detection efficiency could reach maximum value, about 24% for thermal neutrons if the pore diameter was 6 ㎛, the wall thickness was 2 ㎛ and the bias angle was 3 or 6°. The calculated results are of great significance for evaluating the detection efficiency of the ⁿMCP. In a subsequent companion paper, the mathematical model would be extended to the case of the spatial resolution and detection efficiency optimization of the coating ⁿMCP.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Journal of Mechanical Science and Technology
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• 제20권1호
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• pp.1-12
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• 2006

This work reviews the effects of catalyst formulation and exhaust gas composition on soot oxidation in CDPF (Catalytic Diesel Particulate Filter). DOC's (Diesel Oxidation Catalysts) have been loaded with Pt catalyst (Pt/$Al_{2}O_3$) for reduction of HC and CO. Recent CDPF's are coated with the Pt catalyst as well as additives like Mo, V, Ce, Co, Fe, La, Au, or Zr for the promotion of soot oxidation. Alkali (K, Na, Cs, Li) doping of metal catalyst tends to increase the activity of the catalysts in soot combustion. Effects of coexistence components are very important in the catalytic reaction of the soot. The soot oxidation rate of a few catalysts are improved by water vapor and NOx in the ambient. There are only a few reports available on the mechanism of the PM (particulate matter) oxidation on the catalysts. The mechanism of PM oxidation in the catalytic systems that meet new emission regulations of diesel engines has yet to be investigated. Future research will focus on catalysts that can not only oxidize PM at low temperature, but also reduce NOx, continuously self-cleaning diesel particulate filters, and selective catalysts for NOx reduction.

• 센서학회지
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• 제29권2호
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• pp.112-117
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• 2020

Xylene is a hazardous volatile organic compound that should be precisely measured to monitor indoor air quality. However, the selective and sensitive detection of ppm-level xylene using oxide-semiconductor gas sensors remains a challenge. In this study, pure and Cr-doped Co₃O₄ nanoparticles (NPs) were prepared using flame spray pyrolysis, and their gas-sensing characteristics to 5-ppm xylene at 250 ℃ were investigated. The 4 at% Cr-doped Co₃O₄ NPs exhibited a high gas response to 5-ppm xylene (resistance ratio to gas and air = 39.1) and negligible cross-responses to other representative and ubiquitous indoor pollutants such as ethanol, benzene, formaldehyde, carbon monoxide, and ammonia. In this paper, the enhancement of the gas response and selectivity of Co₃O₄ NPs to xylene by Cr doping was discussed in relation to the catalytic promotion of the gas-sensing reaction. This sensor can be used to monitor indoor xylene.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.204-206
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• 1993

In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.