• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Journal of Magnetics
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• v.21 no.1
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.5-8
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• 2007

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.281-281
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• 2010

In this study, ZnO nanorod arrays are grown on organic substrates by hydrothermal method which requires a low temperature, simple process, and no vacuum. The structure properties of ZnO nanorods were examined by field emission scanning electron microscopy and X-ray diffraction. To detect the optical transmission, ultraviolet visible spectrophotometer was also used. From results, the ZnO nanorods were grown the horizontal growth on the organic substrates had the length of over $10\;{\mu}m$. After deposition of ZnO seed layer, the ZnO nanorod arrays had uniformity orientation and length.

• Land and Housing Review
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• v.13 no.1
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• pp.131-140
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• 2022

A smart window is a new building material that can realize energy savings in a building. Smart windows can freely adjust Visible Light Transmittance (VLT) and solar gain coefficient (g-value) according to the situation. Smart windows include such technologies as Electrochromic (EC), Suspended Particle Device (SPD), and Polymer Dispersed Liquid Crystal (PDLC). Recent research on building energy savings through the VLT and g-value control functions of smart windows is being actively conducted and meaningful results are being drawn. However, since most of the research is focused on energy savings, research on the indoor environment is somewhat lacking. A building is a space where people live and the comfort of life should be prioritized before energy savings. Therefore, in this study, analysis on the daylight performance of an office space was carried out. Through green building standards such as LEED, BREEAM, CASBEE, and G-SEED, the daylight performance was reviewed according to VLT value changes of the smart window. In addition, a study was conducted on the VLT range of the electrochromic façade that can maintain a comfortable indoor environment. The smart window used electrochromic control with a wide range of VLT. The study showed that the minimum VLT of a smart window that can satisfy G-SEED is 25% or more. In addition, it was found that the VLT change of the electrochromic smart window did not significantly affect the uniformity of the room. When the LEED standard was applied, the minimum VLT value of the electrochromic smart window that must be maintained according to each orientation of the building was derived.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.622-622
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• 2013

Piezoelectric energy harvesting (PEH) device refers to a power device for acquiring mechanical energy from the environment surrounding us which would otherwise be wasted and for converting it into usable electrical energy. While much work has been done on developing ZnO nanogenerator (NG) with nanowire arrays, there are some issues of not only scaling up its output power but also optimizing structure for operating feasibly in various conditions. Efficiency of NG is highly dependent on fixed orientation. But in many cases, it is not easy to predict where the pressure and vibration may come from. Furthermore, the direction of the applied mechanical stress is usually non-stationary and can be random in various practical applications. Therefore an omnidirectional PEH is needed.In this work, we investigate an omnidirectional PEH device consisting ZnO nanowires. We deposited spiral patterned ZnO seed layer on Kapton film. We deposited thin Cr layer on the ZnO seed layer using DC-sputter to form a passivation layer to retard un-expected growth of ZnO nanowires. We grew ZnO nanowires along the spiral arms using hydrothermal method. ZnO nanowires have been selectively grown from the ZnO sidewall without Cr layer and have the average length of$5{\mu}m$ and the average diameter of 40nm. We reduced the defect in the as-grown ZnO nanowires by O2 plasma using asher and by thermal treatment using RTA. Consequently, each nanowire has different directions to each other. This isotropic design can lead to the omnidirectional power generation. The morphology of NG is characterized with FESEM. Maximum output power of the device is measured by using a picoammeter and a nanovoltmeter.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.39 no.1
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• pp.49-60
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• 2002

We propose an algorithm for extracting the boundary of a desired object with shape information obtained from sample images. Considering global shape obtained from sample images and edge orientation as well as edge magnitude, the Proposed method composed of two steps finds the boundary of an object. The first step is the approximate segmentation that extracts a rough boundary with a probability map and an edge map. And the second step is the detailed segmentation for finding more accurate boundary based on the SEEL (seed-point extraction and edge linking) algorithm. The experiment results using IR images show robustness to low-quality image and better performance than conventional segmentation methods.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.12-16
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• 2004

In this study, we have investigated the development of the crystal growth stability and reproducibility for large and high-quality DAST. DAST crystal were grown from a saturated methanol solution by a slow cooling method and DAST was synthesized by the condensation of 4-methyl-n-methyl pyridinum tosylate, which was prepared from 4-pocoline and methyl toluenesulponate and 4-N-dimethyl amino-bezaldehyde in the presence of piperidine. We had synthesized DAST crystals in dry Argon atmosphere in order to avoid the formation of hydride organge co-crystals, DAST$.$$H_2O$. Since DAST molecules crystallize in a humid atmosphere, crystal structure become centrosymmetric, and then second order NLO (nonlinear optical) properties would be disappeared. We fixed the growth orientation of DAST crystal (001) surface. The crystal growth was proceeded at a cooling rate of $H_2O$/day and the cooling period is for 4 days. The dimensions of seed crystal was $2.5\times 3.6\times0.4\textrm{mm}^3$ and we have obtained a DAST crystal with the dimension of $10\times 10.5\times3.0\textrm{mm}^3$. The color of grown DAST crystal is red and it's surface appears to be metallic green.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.75-80
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• 1997

A perovskite relaxor ferroelectrics PMN is used as an important material to investigate the diffusive phase transition phenomena. In this study PMN single crystals were grown and the microstructure were observed. For the growth of PMN single crystals, the spontaneous nucleation technique and the TSSG technique were used. 2-5mm single crystals were grown from PbO self flux and it was observed that only PMN crystals were grown when excess MgO was added over 100% as flux. Single crystals with well developed (001) faces were obtained from PbO-B2O3 flux. single crystals larger than 1 cm were grown from PbO-B2O3 flux by TXXG technique. For higher quality crystals, optimization of the variables such as the rotation speed of seed crystal, the orientation of seed crystal, and cooling rate is needed. With grown crystals, it was confirmed by TEM diffraction pattern of thin plate crystal that the 1:1 ordering of Mg2+ and Nb5+ with small volume exists.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.