• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• Progress in Superconductivity and Cryogenics
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• v.20 no.3
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• pp.5-10
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• 2018

This study presents that various grain boundary junctions are prepared by controlling the seed orientation combined with an artificial hole in a melt process REBCO bulk superconductor. Large grain YBCO superconductors have been fabricated with various grain boundary junctions that the angle between the grain boundary and the <001> axis of Y123 crystal is $0^{\circ}$, $30^{\circ}$ and $45^{\circ}$, respectively. The presence of the artificial hole is beneficial for the formation of clean grain boundary junction and single peak trapped magnetic field profiles have been obtained. Artificial hole makes two growth fronts meet at a point on a periphery of the artificial hole. The presence of artificial hole is not likely to affect on the distribution of Y211 particles. The newly formed <110> facet lines are explained by the formation of new Y123/liquid interface with (010) crystallographic plane.

• Analytical Science and Technology
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• v.23 no.2
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• pp.103-108
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• 2010

Single crystals of $ZnWO_4$ with [100], [010] and [001] directions were successfully grown by the Czochralski method. The seed crystals for the single crystal growth of $ZnWO_4$ could be induced by the crystal growth using platinum wires applied by the capillary action from the melt. The growth conditions in each direction were investigated in terms of the variations of rotation speed, pulling rate and diameter of the grown crystals. The formation of cracking in the grown crystals during the cooling process could be prevented by annealing effect. The growth directions of the grown crystals were determined using Laue back reflection. The microscopic characteristics of the grown crystals in each direction were discussed, and their physical properties were evaluated for hardness, thermal expansion coefficients and dielectric constants.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.90-91
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• 2002

강한 펄스 레이저가 렌즈에 의해 투명한 매질 속에 집광되면 가시광선 영역에서부터 적외선 영역에 걸친 넓은 파장대의 빛이 발생하게 되는데 이것을 White-Light Continuum이라고 한다. 비선형 결정인 $\beta$-BBO에 의해서도 넓은 영역의 백색광을 발생시킬 수 있다. 이러한 펄스 백색광은 Time-resolved spectroscopy에서의 Probe beam과 다양한 파장대의 펄스 레이저 발생 및 증폭을 위한 Seed pulse 등으로 응용되고 있다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.123-123
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.113-113
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• 2009

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.127.1-127
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• 2003

• Land and Housing Review
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• v.13 no.1
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• pp.131-140
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• 2022

A smart window is a new building material that can realize energy savings in a building. Smart windows can freely adjust Visible Light Transmittance (VLT) and solar gain coefficient (g-value) according to the situation. Smart windows include such technologies as Electrochromic (EC), Suspended Particle Device (SPD), and Polymer Dispersed Liquid Crystal (PDLC). Recent research on building energy savings through the VLT and g-value control functions of smart windows is being actively conducted and meaningful results are being drawn. However, since most of the research is focused on energy savings, research on the indoor environment is somewhat lacking. A building is a space where people live and the comfort of life should be prioritized before energy savings. Therefore, in this study, analysis on the daylight performance of an office space was carried out. Through green building standards such as LEED, BREEAM, CASBEE, and G-SEED, the daylight performance was reviewed according to VLT value changes of the smart window. In addition, a study was conducted on the VLT range of the electrochromic façade that can maintain a comfortable indoor environment. The smart window used electrochromic control with a wide range of VLT. The study showed that the minimum VLT of a smart window that can satisfy G-SEED is 25% or more. In addition, it was found that the VLT change of the electrochromic smart window did not significantly affect the uniformity of the room. When the LEED standard was applied, the minimum VLT value of the electrochromic smart window that must be maintained according to each orientation of the building was derived.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.8-13
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• 2016

A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of $1600{\sim}1800^{\circ}C$. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.1-6
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• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.