• Title/Summary/Keyword: Secondary gamma emission

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The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate

  • Kim, Dong-Hae;Son, Chan-Hee;Yun, Myoung-Soo;Lee, Jin-Young;Jo, Tae-Hoon;Seo, Il-Won;Jo, I-Hyun;Roh, Jun-Hyung;Choi, Eun-Ha;Uhm, Han-Sup;Kwon, Gi-Chung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.358-358
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    • 2012
  • The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

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A STUDY ON THE RELATIONSHIP BETWEEN PLASMA CHARACTERISTICS AND FILM PROPERTIES FOR MgO BY PULSED DC MAGNETRON SPUTTERING

  • Nam, Kyung H.;Chung, Yun M.;Han, Jeon G.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.35-35
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    • 2001
  • agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

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Influence of atmospheric air-holding time before air annealing on the secondary electron emission coefficient(${\gamma}$) from a MgO protective layer

  • 정진만
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.202-202
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    • 2000
  • AC-PDP(Plasma Display Paner)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 2차전자 방출계수(${\gamma}$는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태 등에 영향을 받는다. 본 연구에서는 유리 기판위에 Al 전극을 증착, 에칭후 screen printing으로 유전체를 도포, 소성 한 21inch 규격의 test panel에 MgO 보호막을 E-Beam으로 5000$\AA$ 증착한 후 MgO 보호막을 대기에 노출되는 시간간격을 변수로 하여 대기 열처리 한 MgO보호막의 2차 전자방출계수를 ${\gamma}$-FIB(Focused Ion Beam) 장치를 이용하여 측정하였다. 그리고 대기 노출 간격은 1분, 5분, 20분으로 하여 2차 전자방출계수를 측정하였고, 2차전자방출계수 측정 시 가속전압은 50V에서 200V까지 변화를 주었으며, Ne+을 사용하여 1.2$\times$10-4Torr의 진공도를 유지하며 측정하였다. 또한 각각의 MgO막의 에너지 갭을 광학적 방법을 이용하여 구하였다.

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Effect of gamma-irradiation on the Physicochemical Properties of Hemoglobin

  • Lee, Seung-hwan;Song, Kyung-Bin
    • Proceedings of the Korean Society of Postharvest Science and Technology of Agricultural Products Conference
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    • 2003.10a
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    • pp.135.1-135
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    • 2003
  • To elucidate the effect of gamma-irradiation on the molecular properties of hemoglobin, the secondary, tertiary structure, and the molecular weight size of the protein were examined after irradiation at 0.5, 1, 5, and 10 kGy. Gamma-irradiation of hemoglobin solutions caused the disruption of the ordered structure of the protein molecules, as well as degradation, cross-linking, and aggregation of the polypeptide chains. A SDS-PAGE study indicated that irradiation caused initial fragmentation of the proteins and subsequent aggregation due to cross-linking of the protein molecules. The effect of irradiation on the protein was more significant at lower protein concentrations. Ascorbic acid decreased the degradation and aggregation of proteins by scavenging oxygen radicals that were produced by irradiation. A circular dichroism study showed that irradiation decreased the helical content of hemoglobin with a concurrent increase of the aperiodic structure content. Fluorescence spectroscopy indicated that irradiation decreased the emission intensity that was excited at 280 nm.

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Effect of Defect Energy levels on the AC PDP Discharging Characteristics (MgO 보호막의 결함 전위 레벨이 AC-PDP 방전 특성에 미치는 효과)

  • Kwon, Sang-Jik;Kim, Yong-Jae;Cho, Eou-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.12-17
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    • 2007
  • The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel(PDP) were investigated and analyzed. Mgo films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure, were inspected using XRD(X-ray diffractometry), AFM(atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary, electron emission coefficient $(\gamma)$ was obtained at the evaporation rate of $5\AA/sec$. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5\AA/sec$. In the MgO film deposited at $5\AA/sec$, the (200) orientation and $F^+$ center were most intensive. The XRD results and cathode-luminescence(CL) spectra show the $\gamma$ values are correlated with $F/F^+$ centers of the molecular structure of MgO films.

The Study on the MgO thin film prepared by magnetron sputtering and its electrical characteristics (스파트링 방법으로 제작된 MgO와 그 전기적 특성에 관한 연구)

  • 박정후;조정수;박명호
    • Proceedings of the Korean Vacuum Society Conference
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    • 1997.07a
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    • pp.169-172
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    • 1997
  • MgO dielectric pprotection layer is ppreppared by R.F. reactive magnetron spputtering with Mg target under various conditions of spputtering ppressure, time and substrate tempperature. Discharge characteristics of ppDpp is also studied as a pparameter of MgO pprepparation conditions. As the working ppressure and substrate tempperature was increase, the discharge voltage was decreased. Two kinds of MgO ppreppared both spputtering and E-beam methods were stable after annealing at 35$0^{\circ}C$ for 120min. discharge voltage under 3 mixed gas(He+Xe0.2%+Ne30%) was V=130V, V=102V and ${\gamma}$ coefficient was twiced as much as that of dielectric layer.

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Effect of γ-Irradiation on the Molecular Properties of Myoglobin

  • Lee, Yong-Woo;Song, Kyung-Bin
    • BMB Reports
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    • v.35 no.6
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    • pp.590-594
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    • 2002
  • To elucidate the effect of gamma-irradiation on the molecular properties of myoglobin, the secondary and tertiary structures, as well as the molecular weight size of the protein, were examined after irradiation at various irradiation doses. Gamma-irradiation of myoglobin solutions caused the disruption of the ordered structure of the protein molecules, as well as degradation, cross-linking, and aggregation of the polypeptide chains. A SDS-PAGE study indicated that irradiation caused initial fragmentation of the proteins and subsequent aggregation, due to cross-linking of the protein molecules. The effect of irradiation on the protein was more significant at lower protein concentrations. Ascorbic acid protected against the degradation and aggregation of proteins by scavenging oxygen radicals that are produced by irradiation. A circular dichroism study showed that an increase of the irradiation decreased the a-helical content of myoglobin with a concurrent increase of the aperiodic structure content. Fluorescence spectroscopy indicated that irradiation increased the emission intensity that was excited at 280 nm.

Characteristics of secondary electron emission coefficient of MgO protective layer by annealing effect

  • 정진만
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.236-236
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    • 1999
  • AC-PDP(Plasma display Panel)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태등에 영향을 받는다. 본 연구에서는 MgO 보호막을 열처리한 상태와 열처리 하지 않은 상태를 ${\gamma}$-FIB 장치를 이용하여 2차전자방출 계수를 측정하여 비교하였다. 또한 24시간 MgO 보호막을 대기중에 방치하여 두었을 때 MgO 보호막의 표면오염상태에 대한 2차전자방출계수값을 측정하여 MgO 보호막의 표면오염에 대한 방전 전압특성저하가 어느정도인지를 알아보았다. 실험에 사용한 혼합기체는 Ne+Xe, He+Ne+Xe 혼합기체를 사용하였고, MgO 보호막은 21inch 규격의 실제 PDP Panel의 MgO 보호막을 사용하였다.

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