• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.375-378
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• 2006

Characteristics of doped MgO layer deposited under hydrogen atmosphere were investigated. Hydrogen gas was introduced during e-beam evaporation of doped MgO and its effects on microstructure, cathodoluminescence, discharge voltages and effective yield of secondary electron emission were examined. The results indicated that the hydrogen influences and doped impurities the concentration and energy levels of defects in MgO layer and that affects the luminance efficiency and discharge delays of the panels significantly.

• Journal of Information Display
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• v.7 no.2
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• pp.1-5
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• 2006

The characteristics of MgO layer deposited under hydrogen atmosphere were investigated. Hydrogen gas was introduced during e-beam evaporation coating process of MgO layer and its effects on microstructure, cathode luminescence spectra, discharge voltages and effective yield of secondary electron emission were examined. The results indicated that the hydrogen influences the concentration and energy levels of defects in MgO layer, which in turn affects the luminance efficiency and discharge delays of the panels significantly.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.31-36
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• 2001

The secondary election emission (SEE) yields for the thermally grown $SiO_2$ thin layers were measured by varying the thickness of the $SiO_2$ layer and the primary current. $SiO_2$ thin layers were thermally grown in a furnace at $930^{\circ}C$, whose thickness varied to be 5.8 nm, 19 nm, 43 nm, 79 nm, 95 nm, and 114 nm. When the $SiO_2$ layers were thinner than 43 nm, it was found that SEE curves followed the universal curve. However, for samples with a $SiO_2$ layer thicker than 79 nm, the SEE curves exhibited two maxima and the values of SEE yields were reduced. Additionally, as the current of primary electrons increased, the SEE yields were reduced. In this experiment, the maximum value of the SEE yield for $SiO_2$ layers was obtained to be 3.35 when the thickness of $SiO_2$ layer was 19 nm, with the primary electron energy 300 eV and the primary electron current 0.97 $\mu\textrm{A}$. The penetration and escape depth of an electron in the $SiO_2$ layers were calculated at the primary electron energy for the maximum value of the SEE yield and from these depths, it was calculated that the thickness of the $SiO_2$layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.117-120
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• 1998

In this study, $Al_2O_3/MgO$ bilayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(P1asma Display Panel). The thickness of $Al_2O_3/MgO$ bilayer was optimized by the Matrix Theory for the fabrication of antireflection structure for 5350A wavelength. The secondary electron emission yields of as-deposited film and annealed film were measured and compared, the bilayer was considered for the applicability as PDP. XRD showed the strong (200) primary peak of MgO. The intensity of (200) peak in the film annealed at 300C was decreased. As the result of SEM analysis for MgO films and Alz03 films, it is considered that the morphology of the films were improved of roughness and it were condensed by annealing.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.288-294
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• 2017

This paper contains results of the theoretical studies of the electrical breakdown properties in sulfur hexafluoride. Since the strong interaction of high-energy electrons with the polyatomic sulfur hexafluoride molecule causes their rapid deceleration to the lower energy of electron capture and dissociative attachment, the breakdown is only possible at relatively high field strengths. From the breakdown voltage curves, the effective yields that characterize secondary electron productions have been estimated. Values of the effective yields are found to be more consistent if they are derived from the experimentally determined values of the ionization coefficient and the breakdown voltages. In addition, simulations were performed using an one-dimensional Particle-in-cell/Monte Carlo collision code. The obtained simulation results agree well with the available experimental data with an error margin of less than 10% over a wide range of pressures and the gap sizes. The differences between measurements and calculations can be attributed to the differences between simulation and experimental conditions. Simulation results are also compared with the theoretical predictions obtained by using expression that describes linear dependence of the breakdown voltage in sulfur hexafluoride on the pressure and the gap size product.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.26-34
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• 1998

This paper presents a characterization method for faults of circuit patterns on MCM(Multichip Module) or PCB(Printed Circuit Board) substrates with electron beams of a SEM(Scanning Electron Microscope) by inducing voltage contrast on the signal line. The experimentation employes dual potential electron beams for the fault characterization of circuit patterns with a commercial SEM without modifying its structure. The testing procedure utilizes only one electron gun for the generation of dual potential electron beams by two different accelerating voltages, one for charging electron beam which introduces the yield of secondary electron $\delta$ < 1 and the other for reading beam which introduces $\delta$ > 1. Reading beam can read open's/short's of a specific net among many test nets, simultaneously discharging during the reading process for the next step, by removing its voltage contrast. The experimental results of testing the copper signal lines on glass-epoxy substrates showed that the state of open's/short's had generated the brightness contrast due to the voltage contrast on the surface of copper conductor line, when the net had charged with charging electron beams of 7KV accelerating voltages and then read with scanning reading electron beams of 2KV accelerating voltages in 10 seconds. The experimental results with Au pads of a IC die and Au plated Cu pads of BGA substrates provided the simple test method of circuit lines with 7KV charging electron beam and 2KV reading beam. Thus the characterization method showed that we can test open and short circuits of the net nondestructively by using dual potential electron beams with one SEM gun.

• Journal of Korea Foundry Society
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• v.34 no.1
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• pp.6-13
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• 2014

The mechanical properties of low-pressure die cast (LPDC) A356-T6 automotive road wheels are evaluated and correlated with their corresponding microstructures. In this study, two types of alloy wheels processed using different LPDC gating system are investigated. The yield stress, tensile stress, and elongation values tested at room temperature are correlated with the secondary dendrite arm spacing (SDAS) with respect to the gating system, and are also compared with similar studies. The SDAS and precipitates are examined using optical microscopy, scanning electron microscopy (SEM) and energy-dispersive spectroscopy. The phase information is also investigated using X-ray diffraction. Charpy impact tests are also performed from $-100^{\circ}C$ to $200^{\circ}C$, and the fracture surfaces are examined using SEM. The impact energy is demonstrated to increase with increasing temperatures without exhibiting specific transition behaviors as in other nonferrous alloys. The fracture toughness is also evaluated using three point bend test with single-edged bend specimens. The obtained fracture toughness values are in good agreement with those in similar studies.