• 제목/요약/키워드: Secondary electron energy

검색결과 181건 처리시간 0.031초

전자선 조사에 의한 리튬 이차전지용 상용 폴리에틸렌 분리막의 내열성 향상에 관한 연구 (A Study on the Improvement of the Thermal Stability of a Commercial Polyethylene Separator for Lithium Secondary Battery by an Electron Beam Irradiation)

  • 손준용;임종수;권성진;신준화;최재학;노영창
    • 폴리머
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    • 제32권6호
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    • pp.598-602
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    • 2008
  • 본 연구에서는 리튬이차전지용 상용 분리막에 전자선을 조사하여 가교구조를 지닌 내열성이 향상된 분리막을 제조하였고 조사선량에 의한 열적, 기계적 특성들을 평가하였다. 전자선 조사된 분리막의 열수축률은 조사선량이 증가할수록 감소하였고 AC impedance를 이용한 shutdown거동 연구 결과 전자선 조사를 하지 않은 분리막보다 우수한 shutdown 특성을 갖는 것으로 확인하였다. 또한, 전자선 조사선량이 증가할수록 분리막의 모듈러스는 향상되는 반면 인장강도와 파단 연신율은 감소됨이 관찰되었다.

Interaction between Oxygens and Secondary Defects Induced in Silicon by High Energy $B^+$Ion Implantation and Two-Step Annealing

  • Yoon, Sahng-Hyun;Jeon, Joon-Hyung;Kim, Kwang-Tea;Kim, Hyun-Hoo;Park, Chul-Hyun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.185-186
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    • 2005
  • Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

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Measurement of Defect Energy Level in MgO Layer

  • Son, Chang-Gil;Song, K.B.;Jeoung, S.J.;Park, E.Y.;Kim, J.S.;Choi, E.H.;J, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1380-1383
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    • 2007
  • The secondary electron emission coefficient (${\gamma}$) of the cathode is an important factor for improving the discharge characteristics of AC-PDP, because of its close relationship to discharge voltage. In this experiment, we have investigated the electronic structure of the energy band in the MgO layer responsible for the high ${\gamma}$. We used three kinds of MgO pellet that have another component, and each MgO layers have been deposited by electron beam evaporation method. The work-functions of MgO layer have been investigated from their ion-induced secondary electron emission coefficient (${\gamma}$), respectively, using various ions with different ionization energies in a ${\gamma}-FIB$ (Focused Ion Beam) system. We have compared work-function with ${\gamma}-FIB$ system current signal for measurement defect energy level in MgO layer. MgO-A in the three types has lowest work-function value (4.12eV) and there are two defect energy levels.

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Band Gap Energy Engineering of Electron Emission Layer of ac-PDPs

  • Yoon, Sang-Hoon;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.262-264
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    • 2009
  • Ternary oxides with controlled band gap energy and reduced reactivity against moisture and carbon dioxide gas were designed and studied as a potential material for protective layer of ac-PDPs. The results showed a significant reduction in firing voltage and improved environmental stability.

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Control of secondary electron emission coefficient with microstructural change of polycrystalline MgO films

  • Yu, Hak-Ki;Lee, Jong-Lam;Park, Eung-Chul;Kim, Jae-Sung;Ryu, Jae-Hwa
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1445-1447
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    • 2008
  • Micro crystal structure of polycrystalline MgO film is controlled by adjusting the energy of particles arrived at the substrate during deposition. The change of crystal structure affects on the total area of (200) surface where the oxygen vacancies are formed easily, resulting in the change of secondary electron emission (SEE) coefficient($\gamma$).

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Measurement of ion-induced secondary electron emission coefficient for MgO thin film with $O_{2}$ plasma treatment

  • Jeong, H.S.;Oh, J.S.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.802-805
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    • 2003
  • The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

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Slow Noble Ion - Induced Secondary Electron Emission Characteristics of MgO Layer.

  • Lee, Sang-Kook;Kim, Jae-Hong;Lee, Ji-Hwa;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.221-223
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    • 2002
  • We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

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X선(線)에 의한 광전수율(光電收率) 계산(計算)에 관(關)한 연구(硏究) (Calculation of Photoelectric Yield by X-ray)

  • 송재관
    • 대한방사선기술학회지:방사선기술과학
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    • 제1권1호
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    • pp.31-35
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    • 1978
  • X-rays contribute to electron emission from material surfaces primarily through photoelectric interaction. A simple model is described for predicting the yield and energy spectrum of photon and Auger electrons emitted from materials exposed to X-ray with low energy. In this paper, We have calculated the yield of primary, Auger, and secondary, electrons. The results of the photoelectric yield model developed here suggests that. I) The angular distribution of emitted electrons(Per unit angle) is proportional to $sin{\theta}\;cos{\theta}$ for all electron energies and all components(Primary, Auger, or Secondary) II) The shape of the energy spectrum of the photoelectric yield is independent of angle. III) For this targets the forward and backward photoelectric yields are indentical.

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냉음극형 대면적 전자빔의 공간적 분포 특성 (Characteristics of spatial distribution of cold cathode type large aperture electron beam)

  • 우성훈;;조주현;김광훈;이홍식;임근희;이광식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2170-2172
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    • 1999
  • A low energy large aperture(LELA) pulsed electron beam generator of a cold cathode type has been developed for environmental applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. We have fabricated the LELA electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large aperture electron beam in air. The electron beam current density has been investigated as a function of glow discharge current, accelerating voltage and radial distribution in front of the exit window foil. The plasma density and electron temperature have been measured in order to confirm the relation with the electron beam current density. We are going to upgrade the LELA electron beam generator in the electron energy, electron beam current and stability of operation for various applications.

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