• Journal of Powder Materials
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• v.25 no.3
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• pp.213-219
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• 2018

We report a method for preparing rare earth oxides ($Re_xO_y$) from the recycling process for spent Ni-metal hydride (Ni-MH) batteries. This process first involves a leaching of spent Ni-MH powders with sulfuric acid at $90^{\circ}C$, resulting in rare earth precipitates (i.e., $NaRE(SO_4)_2{\cdot}H_2O$, RE = La, Ce, Nd), which are converted into rare earth oxides via two different approaches: i) simple heat treatment in air, and ii) metathesis reaction with NaOH at $70^{\circ}C$. Not only the morphological features but also the crystallographic structures of all products are systematically investigated using field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD); their thermal behaviors are also analyzed. In particular, XRD results show that some of the rare earth precipitates are converted into oxide form (such as $La_2O_3$, $Ce_2O_3$, and $Nd_2O_3$) with heat treatment at $1200^{\circ}C$; however, secondary peaks are also observed. On the other hand, rare earth oxides, RExOy can be successfully obtained after metathesis of rare earth precipitates, followed by heat treatment at $1000^{\circ}C$ in air, along with a change of crystallographic structures, i.e., $NaRE(SO_4)_2{\cdot}H_2O{\rightarrow}RE(OH)_3{\rightarrow}RE_xO_y$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.106-112
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• 2010

In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.16-19
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• 2003

Ni thin films on the p-InP (In) substrates were grown at room temperature by using the ion beam-assisted deposition. In order to determine the work function of the Ni thin films, the $\gamma$values were measured as functions of the acceleration voltages by using Ne, Ar, $N_2$. and Xe ion sources. The dependences of the values on various gases and on the acceleration voltages of the focused ion beam were obtained to determine the work function of the Ni thin films. The value of the work function of the Ni thin films grown on the p-InP (100) substrate was 5.8 eV ~ 5.85 eV. These results provide important information on the electronic properties of Ni thin films grown on p-InP (100) substrates at room temperature.

• Journal of Powder Materials
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• v.18 no.2
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• pp.105-111
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• 2011

This study investigated the effect of wire diameter and applied voltage on the fabrication of Ni-free Fe-based alloy nano powders by employing the PWE (pulsed wire evaporation) in liquid, for high temperature oxidation-resistant metallic porous body for high temperature particulate matter (or soot) filter system. Three different diameter (0.1, 0.2, and 0.3 mm) of alloy wire and various applied voltages from 0.5 to 3.0 kV were main variables in PWE process, while X-ray diffraction (XRD), field emission scanning microscope (FE-SEM), and transmission electron microscope (TEM) were used to investigate the characteristics of the Fe-Cr-Al nano powders. It was controlled the number of explosion events, since evaporated and condensed nano-particles were coalesced to micron-sized secondary particles, when exceeded to the specific number of explosion events, which were not suitable for metallic porous body preparation. As the diameter of alloy wire increased, the voltage for electrical explosion increased and the size of primary particle decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1441-1444
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• 2008

We developed ultra-accelerated quantum chemical molecular dynamics and spectroscopic characterization simulators for development of PDP materials. By combination of these simulators, realistic structure of PDP materials is drawn on the computer. Furthermore, based on the structures, various properties such as cathode luminescence spectrum and secondary electron emission, is successfully evaluated. The strategy of "Experiment integrated Computational Chemistry" using developed simulators will presented that has the potential in being powerful tool for designing the PDP materials.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.422-426
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• 2008

The effects of an addition of $ZrO_2$ on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm $ZrO_2$ protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient ($\gamma$) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of $ZrO_2$. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of $\gamma$, at 0.080, a grain size of $19\;{\mu}m$ and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm $ZrO_2$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.351-355
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increased the reaction area of graphite electrodes used carbon nanotube (CNT) and porous carbon. CNT is limited to device utilization in order to used a metal catalyst by lack of surface area to improve. In contrast carbon nanowall (CNW) is chemically very stable. So this paper, microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow carbon nanowall (CNW) on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. To find the growth properties of CNW according to the reaction gas ratio, we have changed the methane to hydrogen gas ratios (4:1, 2:1, 1:2, and 1:4). The vertical and surficial conditions of the grown CNW according to the gas ratios were characterized by a field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy measurements showed structure variations.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.