• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.383-386
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• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1564-1567
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• 2009

Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2273-2279
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• 2012

This research is based on fabricating Cu(In,Ga)$Se_2$ thin-film by co-evaporation method. On $1^{st}$ - stage, $In_2Se_3$ phase appeared when the substrate temperature reached to $400^{\circ}C$, however, there was small effect between the substrate temperature and absorbency spectrum on $2^{nd}$, $3^{rd}$ - stage because the average thickness of the thin-film was $1{\mu}m$ or higher. SEM and XRD was measured on $2^{nd}$ and $3^{rd}$ stage and it showed as the substrate temperature increases, the density of the crystal structure increased with the decreament of the vacancy. Furthermore, the formation of Cu(In0.7Ga0.3)$Se_2$ phase showed at $480^{\circ}C$ and $500^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.31 no.11
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• pp.141-145
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• 1982

Optical absorption properties of an orphous Se film due to interband electronic transitions are observed in the visible range by varying the folm thickness. Amorphous Se films were prepared by evaporation method. As the experimental results, it is found that optical energy gap is around 2.07(e V), and the optical constants depend on the film thickness, evaporation-deposition conditions, and incident photon energy.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.85-87
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• 2009

Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.441-443
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• 2008

A non-vacuum process for fabrication of $CuInSe_2$ (CIS) absorber layer from the corresponding Cu, In solution precursors was described. Cu, In solution precursors was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$ and methanol. The Cu, In solution precursors were mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CI/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIS absorber layer. The CIS absorber layer selenized at $530^{\circ}C$ substrate temperature for 30 min with various Se gas evaporation temperature was characterized by XRD, SEM, EDS.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.400-400
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• 2009

Despite the success of Cu(In,Ga)$Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the $CuInSe^2$ chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of $10^{14}cm^{-1}$, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.120-120
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• 1997

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.60-68
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• 2000

The optical constants ($E_g^d$, n, K) of the polycrystalline CdSe thin films deposited on the glass substrate by the electron-beam evaporation technique are determined over 400~2,500 nm photon wavelengths. In order to explain the variation of the optical contents with film thickness and substrate temperatures, the surface microstructural parameter are investigated by AFM (atomic forced microscope( images for the films deposited by different growth conditions. It is shown that the variations of optical constants are close related to changes of the surface morphology of the CdSe thin films. The decrease in the band gap with film thickness is connected with quantum size effects due to increase of the grain size. The refractive index of CdSe films decrease with increasing the grain size of the films, and the dispersion of the refractive index followed a single oscillator model according to the Sellmeier formulation.