• Journal of Animal Science and Technology
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• v.48 no.4
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• pp.603-610
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• 2006

This study was conducted to investigate the feeding effect of selenium provided by different sources on the physico-chemical properties of M. longissimus thoracis. Twenty Hanwoo steers(20～24 months, approximately 613kg) were assigned to 4 different feeding groups of each five, depending on the sources of selenium such as inorganic selenium(sodium selenite), organic selenium(Yeast, USA Sel-Plex), Se-SMC(Se-spent mushroom compost) and the control(no selenium). The selenium level in feed was 0.9 ppm for all groups except the control. Animals were fed with different feeding treatments for 12 weeks and slaughtered at National Livestock Research Institute. The inorganic selenium group had the highest cooking loss(CL. %) and followed by the Se-SMC group and organic selenium group. No significant differences in chemical composition, WB-shear forces, water-holding capacity(WHC) and sensory properties were found among the groups(P>0.05). There were 40% frequencies of grade A in the inorganic selenium group and followed by the organic selenium group(20%). Se-SMC group had 80% of frequencies for grade 1+ and followed by the inorganic selenium group(40%), whereas the organic selenium group and the control group had the 20% frequencies for grade 1+. From the results of this study showed that the selenium sources did not affect chemical composition, WHC and tenderness of Hanwoo steers. However, the inorganic selenium group had the highest cooking loss(%) and lowest pH when compared to the other groups.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.86-87
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• 2009

High quality $CuInSe_2$ (CIS) were grown on GaAs substrate by using the hot wall epitaxy method. The behavior of point defects in the CIS layer investigated by using photoluminescence (PL) at 10 K. Point defects originating from $V_{Cu}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ were classified as donor or acceptor types. These PL results also led us to confirm that the p-type CIS layer had obviously converted into n-type after the Cu atmosphere treatment. Finally, we found that the In in the CIS layer did not form the native defects, because In existed in the form of stable bonds in the CIS layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.75-76
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• 2006

olycrystailine CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. We measured also spectral response, sensitivity($\gamma$), maximum allowable power dissipation and response time on these samples.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.872-876
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• 2006

This study was made to examine the electromagnetic interference(EMI) shielding effect (SE) of multilayered thin films in which indium-tin oxide(ITO) and Ag were deposited alternately from 3layer to 9 layer on Poly Methyl Meth Acrylate(PMMA) substrate at room temperature using a PF sputtering. We measured optical and electrical characteristics by UV-spectrometer and 4 point probe. The measurement of EMI SE in frequency range from 50MHz to 1.5GHz was performed by using ASTM D4935-89 method. We compared the measured EMI SEs with theoretical simulation data. We obtained relatively low resistivity and high transmittance from the EMI SE multilayers. In this study, we obtain good optical electrical characteristics with a minimun transmittance of about 60% at 550nm wavelength and sheet resistance of $2{\sim}3ohm/sq$., respectivity. Measured EMI SEs were over 50dB and similar to theoretical simulation data.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.350-353
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• 2009

The shielding enclosure is very essential device to test the electromagnetic wave power generated by various RF equipments. Some standards for the shielding enclosures were established to test them in right method. Generally, There are IEEE-STD-299 and MIL-STD-285 and NSA-65-6 of the method for measuring the effectiveness of shielding enclosures, the IEEE-STD-299 combined MIL-STD-285 and NSA-65-6 about the method for measuring shielding effectiveness(SE) about 1969 years, but, the measurement point of 299 proposal is many points(including shielding wall, seam, coner beat, shielding door, etc) and demand long time of measurement. To improve SE test method for shielding enclosures was studied and suggested to develop a proper test procedure. First, we measure reference level as frequency range and H/V polarization, secondly, measure leakage point, and finally, measure shield effect and calculate SE. Our method has a merit of the less measurement point than IEEE-STD-299, and shorten time than 299, and define representation SE of shielding enclosure effectively.

• Laser Solutions
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• v.7 no.3
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• pp.47-50
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• 2004

In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.20-23
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• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.149-157
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• 2015

We investigated the effects of the fabric structure or the kinds of plated metals on the electromagnetic interference shielding effectiveness (EMI SE) by means of electroless plating on polyester fabric. We found that the weight of deposited metal, EMI SE, and flexibility of the conductive fabric for EMI shield is affected by morphology of fabric and structure of fiber. The EMI SE of conductive fabric plated Ni/Cu/Ni by electroless plating method on draw textured yarn (DTY) polyester was in the practically useful range of above 70 dB over a wide frequency range of 10 MHz to 1.0 GHz at the surface resistivity of $0.05{\Omega}/{\square}$. Au or Ag plated conductive fabric by immersion plating method is not able to provide for a good EMI SE.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.839-842
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• 2009

In this paper, chalcogenide glasses material(Se, Te, Sb) is firstly used as encapsulation layer of OLEDs under high vacuum of $10^{-4}$Pa. In the experiments, properties of OLEDs encapsulated by Se, Te, Sb thin film is compared with that of device encapsulated by traditional method. It is found that Se, Te, Sb film can extend lifetime of devices to 1.4, 2, 1.3 times respectively. Chalcogenide glasses film as encapsulation layer has little effect on some characteristics of device. The research indicated that OLEDs can be well protected upon applying Se, Te, Sb film as encapsulation layer. It is clear that it can prolong the lifetime obviously.