• Bulletin of the Korean Chemical Society
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• v.23 no.10
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• pp.1389-1393
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• 2002

The non-spectroscopic interference effects that occurred in inductively coupled plasma/mass spectrometry were studied for Ge, As and Se in human urine and serum. Many biological samples contain Na, K, Cl and organic compounds, which may cause the enhancement and depression on the analyte signal. The effect of 1% concomitant elements such as N, Cl, S, P, C, Na, and K on a 100 ㎍/L germanium, arsenic and selenium signal has been investigated by ICP/MS. The interference effects were not in the same direction. It appeared that concomitant elements such as Cl, S, and C induce an enhancement effect, whereas N and P did not show any significant effect. And, Na and K caused a depression. We have found a link between the abundance of analytes and the ionization potential of concomitant elements (eV), except carbon and nitrogen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.505-508
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• 2001

Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.3%, and the removal effect of latent charge by using light erase method was its 95.5%.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.216.1-216
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.69-69
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• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.467-471
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• 2000

The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.183-191
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• 2007

The highest diffraction efficiency(DE) value after illumination and post-curing of photopolymer films were obtained at the $SeO_2$/Acrylamide(AA) Ratios of AA 3.0 g, $SeO_2$ 1.0g and the DE's were stable values of over 90%. By the addition of $SeO_2$, the maximum DE at the initial stage of illumination was reached at 300 seconds, which suggests $SeO_2$ slows down the photopolymerization of AA, which enhances the maximum DE value by giving more migration time. DE variation curve for the optimum composition during extended-time illumination of 9,000 seconds resembles a sine curve due to the combination of the monomer diffusion and the photopolymerization, and the photopolymer film expanded by about 8% after photopolymerization due to monomer migration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.96-97
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• 2008

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-Cl 30 ppm and X-ray Sensitivity was 0.57 pc/pixel$.$mR at 137 $\mu\textrm{m}$ x 137 $\mu\textrm{m}$ Pixel area.

• Preventive Nutrition and Food Science
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• v.14 no.2
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• pp.142-147
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• 2009

In this study, the selenium (Se) accumulations of soybean sprouts and mungbean sprouts treated with various concentrations of Se-solutions were evaluated, as part of a broader effort to produce Se-enriched variants of the plants. Four levels of sodium selenate ($Na_{2}SeO_{4}$)-dissolved solutions (i.e. 0, T0; 6, T1; 60, T2; and $600{\mu}g/mL$, T3) were prepared and sprayed onto the plants during cultivation. The effect of different spraying periods on Se accumulation was also assessed by watering plant groups once a day for periods of one, two, or three days. Se solution remaining on the surfaces of the plants was washed out by spraying with distilled water on the final day of cultivation. However, the increase of Se accumulation in the plants was found to depend on both Se-concentration and watering period, and the soybean sprouts were determined to accumulate Se more effectively than the mungbean sprouts. Additionally, with regard to Se accumulation in the plants, the period of application of Se solution was determined to be more important than the concentration of the Se solution applied. The averaged total levels of Se-enrichment in whole soybean sprouts at T0, T1, T2, and T3 were 0.26, 65.86, 179.62, and $525.12{\mu}g/dry$ matter (DM) g, respectively, and the relative equations relating Se enrichment in soybean sprouts (Y) against watering days (X) were Y=32.505X-36.17 (T1), Y=88.46X-92.04 (T2), and Y=251.11X-254.9(T3). The averaged total levels of Se-enrichment in the whole mungbean sprouts at T1, T2, and T3 group were 0.05, 3.64, and $101.43{\mu}g/DM$ g, respectively, and the relative equations relating Se enrichment (Y) to watering days (X) for mungbean sprouts were Y=1.67X-1.3467 at T1 and Y=48.035X-46.907 at T2. The results of this study suggest that soybean sprouts and mungbean sprouts enriched with bioavailable Se can be produced on a large scale by Se supplementation, allowing for the development of healthy functional foods such as Se-enriched mungbean sprout soups and salads, Se-enriched functional drink and food additives, and selenium tablets to promote health.