• Journal of Adhesion and Interface
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• v.24 no.1
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• pp.36-40
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• 2023

A van der Waals material refers to a material having a two-dimensional layered structure composed of van der Waals bonds with weak interlayer bonding. The research based on heterojunction structures using such van der Waals two-dimensional materials has been steadily studied since the discovery of graphene. Herein, this paper reports a van der Waals heterojunction -based field-effect transistor device based on monolayer single crystalline MoSe2 grown by atmospheric pressure chemical vapor deposition. We found that MoSe₂ grown under optimized process conditions did not have atomic-level defects and the transistor devices incorporating MoSe₂ also showed excellent characteristics.

• Journal of Animal Science and Technology
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• v.46 no.5
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• pp.799-810
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• 2004

This study was conducted to determine effects of spent composts of Se-enriched mushrooms (Se-SMC) as the dietary selenium source on carcass characteristics, plasma glutathione peroxidase(GSH-Px) activity and Se deposition in finishing Hanwoo steers. In combination with both Se-SMC and normal SMC, experimental treatment diets were formulated to contain 0.1, 0.3, 0.6 and 0.9 ppm of Se on a dry matter basis. A total of 20 finishing Hanwoo steers (average BW = 613 kg, average age = 20 to 24 mo) were allotted to treatments in four groups of five steers per pen for 12 wk preceding slaughter. While the experiment is employed, blood samples were taken to analyze Se concentration and GSH-Px activity, and muscle and liver samples were collected for analyses of Se contents in their tissues after slaughter. DMl and BW gain were not affected by dietary Se level and any toxic symptoms in treatments with a higher level of Se were not observed. No differences were noted for carcass characteristics. Se concentration in whole blood and plasma GSH-Px activity were linearly increased with the increasing level of dietary Se (P < 0.01). Se content in the hind leg for Se-SMC supplemented groups significantly increased (P < 0.05) upon dietary Se level, with 0.27, 0.37, 0.40 and 0.46 !1g1g dry, respectively. However, Se content in the loin was not affected by dietary Se levels. Se content in the liver was significantly increased(P < 0.05) as dietary Se increased, with 0.79, 1.40, 2.39 and 3.10 !1g1g dry, respectively. These results suggested that Se in the Se-SMC was highly bioavailable, and Se-SMC might be used not only as an inexpensive way of providing Se for ruminants but also as another way of producing Se-fortified beef.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Practical Agriculture & Fisheries Research
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• v.6 no.1
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• pp.116-135
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• 2004

This study was conducted to investigate effects of spent composts of Se-enriched mushrooms as the dietary Se source on muscular Se deposition and plasma glutathione peroxidase (GSH-Px) activity in the finishing Hanwoo steer. Twenty Hanwoo steers were used in the experiment and they were divided into four groups in a randomized complete block design with five replicates. Treatments were four levels (0.1, 0.3, 0.6 and 0.9ppm as fed basis) of dietary Se from the combination with spent composts of Se-enriched mushrooms and/or Se non-enriched mushrooms, in which each treatment was formulated with corn and corn gluten meal and so forth. Treatment diets were fed to Hanwoo steers for 90 days until the slaughter. Dry matter intakes had no significant differences among treatments and there were no significant differences for performances such as total BW gain and ADG among treatments. The Se concentration in blood was linearly increased with increasing dietary selenium levels and reached a plateau level after 8 weeks (p<0.001). Plasma GSH-Px activities had the similar trends to blood Se concentrations by showing that the increased dietary Se level significantly increased plasma GSH-Px activities of both total and Se-dependent (p<0.001). Muscle Se contents of Se-supplemented groups were linearly increased by 1.35 ~ 1.68 folds compared with the control group (0.1ppm; 0.273㎍/dry g) and especially those of the hind legs for 0.9ppm treatment showed the highest Se content as shown 0.457㎍ per dry gram (p<0.01) corresponding to approximately 70% increase of the control group. Se retention rate in the muscle of dietary Se originated from spent composts of Se-enriched mushrooms was estimated of maximum approximately 30% and dietary Se content showed the significant correlation with plasma GSH-Px activities and muscle Se contents (p<0.01). Accordingly, Se present in spent composts of Se-enriched mushroom as the dietary Se source not only had great bioavailabilities showing higher blood Se concentration and plasma GSH-Px activities, but also increased Se deposition in the muscle for Hanwoo beef cattle.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.119-122
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• 2006

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

• Current Photovoltaic Research
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• v.3 no.1
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• pp.21-26
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• 2015

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.

• Journal of the Korean Electrochemical Society
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• v.14 no.2
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• pp.61-70
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• 2011

Thin film solar cells with chalcopyrite $CuInSe_2/Cu(In,Ga)Se_2$ absorber materials, commonly known as "CIS/CIGS solar cells" have recently attracted significant research interest as a potential alternative energy-harvesting system for the next generation. Among the different deposition techniques available for the CIGS absorber layer, electrodeposition is an effective and low cost alternative to vacuum based deposition methods. This article reviews progress in the area of CIGS solar cells with an emphasis on electrodeposited absorber layer. Existing challenges in fabrication of stoichiometric absorber layer are highlighted.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.370-370
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• 2011

ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.