• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.210-210
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• 2010

ABO2 형태를 가진 delafossite 구조 산화물은 p-type 투명전도체 소재로 유명하다. Delafossite 구조가 p-type 투명전도체에 적합한 결정적인 이유는 밴드갭이 넓고 공유결합에 유리하기 때문이다. 투명전도체는 가시광선의 흡수가 없도록 band gap을 넓히는 것이 우선인데 이러한 band gap이 넓은 구조가 delafossite이다. 또한 delafossite 구조는 구조적으로 각각의 산화물 이온들이 유사 사면체 배위(pseudo-tetrahedral coordination)을 갖는다. 이러한 사면체 배위결합구조에서 산소이온은 비결합면이 없기 때문에 더욱더 공유결합성을 향상시킬 것으로 생각된다. 여기서 A는 +1가 cation, B은 +3가 cation으로 구성되어 있다. A자리에는 1가 원소인 팔라듐, 플래티늄, 은, 구리 등을 가질 수 있고. B자리에 3가 원소이면서도 크기가 알루미늄보다는 크고 란타늄보다는 작은 금속이 들어갈 수 있다. Delafossite 구조는 상온에서 2종류의 polytype (상온에서 Rhombohedaral 구조와 hexagonal 구조)이 존재하며 이들은 각각 3R(Rm) 및2H (P63/mmc)의 결정 구조를 가지고 있다. CuCrO2는 일반적으로 3R결정구조를 가지는 것으로 알려져 있다. delafossite 구조는 전기적 이방성을 띄고 있는데 c-축 방향으로의 전기적 특성이 a-축 방향으로의 전기적 특성보다 약 1000배 높은 물성을 띈다고 한다. 이는 c-축 방향의 원자 위치 때문인데 CuCrO2의 경우 Cu-O-Cr-O-Cu로서 3d-2p-3d-2p-3d 궤도를 가지기 때문인 것으로 알려져 있다.[ref] 반면 c-축으로 에피성장된 박막의 경우 +3가 이온이 위치한 layer에서 hole hopping에 의해 캐리어가 전도된다고 알려져 있기도 하다. 본 연구에서는 PLD를 이용하여 c-plane 사파이어 기판위에 성장된 delafossite구조인 CuCrO2박막의 특성을 알아보았다. p-type 특성을 위하여 CuCrO2에 Ni를 첨가하였으며 그에 따른 구조적 전기적 특성을 조사하였다. 성장온도와 도핑농도를 변화시켜 특성을 연구하였다. 결정구조적 특성과 전기적 특성을 분석하려 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.298-299
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• 2010

Cu(In, Ga)Se2 (CIGS) 박막 태양전지는 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al 의 구조를 가지고 있다. CIGS 화합물은 direct bandgap 구조를 하고 있으며, 광흡수율이 다른 어떤 물질들 보다 뛰어나 박막으로도 충분히 태양광을 흡수할 수 있다. 또한 Ga의 도핑 농도에 따른 밴드갭 조절도 가능하다. 이러한 성질들로 인해 현재 박막태양전지로서 20.1%의 최고효율을 가지고 있다.[1] CIGS 박막 태양전지에서 p-CIGS layer와 스퍼터링으로 증착되는 n-ZnO layer사이의 buffer 층으로 chemical bath deposition (CBD)-CdS 박막을 주로 사용한다. CBD-CdS 박막은 n-ZnO 스퍼터로 증착 시킬 때, CIGS 층의 손상을 최소화하고, 이 두 층 사이에서의 격자상수와 밴드갭의 차이를 줄여주어 CIGS 박막태양전지의 효율을 증가 시키는 역할을 한다. 하지만, Cd (카드뮴)의 심각한 독성과 낮은 밴드갭(2.4eV)으로 인해 CIGS 층에서의 광흡수율을 줄여, CdS를 대체할 새로운 buffer 층의 필요성이 대두되었다.[2] 그 대안으로 ZnS, Zn(O, S, OH), (Zn, Mg)O, In2S3 같은 물질이 연구되고 있다. 현재 CBD-ZnS를 buffer 층으로 사용한 CIGS 박막태양전지의 효율은 최고 18.6%로 CBD-CdS의 최고효율보다는 약 1.5% 낮지만, ZnS가 높은 밴드갭(3.7~3.8eV)과 Cd-free 물질이라는 점에서 CdS를 대체할 물질로 각광받고 있다. 본 연구에서는 기존의 CdS 박막을 제조하는 방법과 같은 방법인 CBD를 이용하여 ZnS 박막을 제조하였다. ZnS 박막을 제조하기 위해서는 Zinc sulfate, Thiourea, 암모니아가 사용된다. 암모니아의 mol 농도에 따른 CBD-ZnS/CIGS 박막태양전지의 효율 변화를 관찰하기 위해 암모니아의 mol 농도는 1 mol, 2 mol, 3 mol, 4 mol, 5 mol, 6 mol, 그 이상의 과량을 사용하여 실험하였다. 실험 결과, 암모니아농도 5 mol에서 효율 13.82%를 확인할 수 있었다. 최고효율을 보인 조건인 암모니아 농도가 5 mol 일 때, Voc는 0.602V, Jsc는 33.109mA/cm2, FF는 69.4%를 나타내었다.

• 대한금속재료학회지
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• 제50권3호
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• pp.206-211
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• 2012

Graphene has recently received high attention as a promising material for various applications, and many related studies have been undertaken to reveal its basic mechanical properties. However, the tribological properties of graphene film fabricated by the chemical vapor deposition (CVD) method are barely known. In this study, the contact angle and frictional wear characteristics of graphene coated copper film were investigated under room temperature, normal air pressure, and no lubrication condition. The contact angle was measured by sessile drop method and the wear test was carried out under normal loads of 660 mN and 2940 mN, respectively. The tribological behaviors of a graphene coating layer were also examined. Compared to heat treated bare copper foil, the graphene coated one shows a higher contact angle and lower friction coefficient.

• Asian Spine Journal
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• 제12권6호
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• pp.1117-1122
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• 2018

Study Design: Prospective study. Purpose: To assess the prevalence of periodontoid calcification and its associations with acute cervical pain. Overview of Literature: Calcium pyrophosphate dihydrate (CPPD) deposition disease is a common rheumatological disorder that occurs especially in elderly patients. Although CPPD crystals induce acute arthritis, these crystals are not usually symptomatic. Calcification surrounding the odontoid process (periodontoid calcification) has been reported to induce inflammation, resulting in acute neck pain. This disease is called crowned dens syndrome. Whether calcification induces inflammation or whether the crystals are symptomatic remains unclear. Methods: The prevalence of periodontoid calcification at the atlas transverse ligament was examined by computed tomography of the upper cervical spine in patients suspected of brain disease but no cervical pain (control group, n=296), patients with pseudogout of the peripheral joints but no cervical pain (arthritis group, n=41), and patients with acute neck pain (neck pain group, n=22). Next, the correlation between the prevalence of periodontoid calcification and symptoms was analyzed. Results: In the control group, 40 patients (13.5%) showed periodontoid calcification with no significant difference in the prevalence with gender. The prevalence of calcification increased significantly with age (p=0.002). In the arthritis group, 26 patients (63.4%) reported periodontoid calcification. In the neck pain group, 14 patients (63.6%) reported periodontoid calcification. Multiple logistic regression analysis by age and group revealed that higher age, inclusion in the arthritis group, and inclusion in the neck pain group significantly affected the prevalence of calcification. Conclusions: Our results cumulatively suggest that periodontoid calcification is an aging-related reaction and that calcification per se does not always cause neck pain. Periodontoid calcification was observed more frequently in patients with pseudogout of the peripheral joints and in those with acute neck pain than in asymptomatic control patients.

• Archives of Plastic Surgery
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• 제49권3호
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• pp.304-309
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• 2022

Background Laminin 5, which is found in the basement membrane of dermal-epidermal junction (DEJ), is a major adhesive component and associated with proliferating and migrating keratinocytes. In this study, we hypothesized that the topical application of the skin care products containing the novel peptides might restore the DEJ structure by deriving deposition of laminin 5 and promoting the keratinocyte migration. Here, we evaluated the restoration of DEJ by measuring the skin thickness. Methods Single-center retrospective analysis was performed on a total of 13 patients who underwent skin care using Baume L.C.E. (France, Laboratories d' Anjou) between January and March 2021. All patients applied the skin care agent for 2 weeks only on their left hand dorsum. Before the initiation of the application and after 2 weeks, both their hands were evaluated on photography and ultrasound. And the patients were asked to rate their satisfaction with the questionnaire after 2 weeks. Results There was no obvious improvement in photographic assessment and questionnaire. The post-pre difference of skin thickness in ultrasound images was, in left hand, 0.1 ± 0.37 in distal point and 0.1 ± 0.35 in proximal point; and, in right hand, 0 ± 0.17 in distal point and 0 ± 0.15 in proximal point, respectively. The pre-post difference was statistically significant in proximal point (p = 0.035). Conclusion Topical application of novel peptide derivative comprising laminin 5 demonstrated cutaneous changes including skin thickness, as assessed by ultrasound. Further studies using other modalities including dermal density measurement, three-dimensional photography, optical coherence tomography, or skin biopsy would be helpful to determine the skin-improving effects.

• 한국기계가공학회지
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• 제20권11호
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• pp.86-91
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• 2021

Recently, functional clothes that can reduce deposition and/or penetration of fine dust have been developed. However, there are no methods to quantitatively evaluate the performance of these clothes. In this study, we developed a method to contaminate a fabric using fine dust and established an approach to quantitatively assess the degree of particle contamination on the fabric surface. Silicate powder was chosen as the particle to simulate fine dust because silicate particles are fluorescent under UV light; therefore, they can be distinguished from any color of non-fluorescent fabric surface. A camera with a high-resolution lens system was used to scan the surface of the contaminated fabric surface, and the degree of particle contamination of the fabric surface was analyzed in terms of the pixels corresponding to the area of the fabric surface contaminated by silicate particles. Finished or unfinished nylon fabrics as well as cotton fabrics were contaminated with silicate particles, and their surfaces were scanned using the established camera. The proposed assessment method was found to be useful for quantitatively comparing the degree of particle contamination of the fabrics.

• 한국해안·해양공학회논문집
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• 제35권6호
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• pp.164-172
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• 2023

백사장 모래의 입도분포는 해빈의 침식과 퇴적을 파악하는 데 중요한 정보를 제공한다. 모래의 입도분포 분석에 보편적으로 사용되는 체가름시험은 분석 시간이 길고 개별 입자의 형상과 색에 대한 정보를 얻을 수 없다는 한계점이 있다. 본 연구에서는 체가름시험법 보다 측정 과정이 간편하고 효율적인 스마트폰 디지털 이미지를 이용한 입도분포 분석 방법을 제안하였다. 이미지 분석 과정 중 이미지 기울기(Image Gradient) 계산을 통한 입자 경계 추출로 해상도가 상대적으로 낮은 스마트폰 디지털 이미지의 배경으로부터 입자를 효과적으로 검출하였다. 경상북도 4곳의 해수욕장에서 채취한 시료를 이용해 본 연구에서 제안한 경계 추출 이미지 분석법과 경계를 추출하지 않는 분석법을 각각 체가름시험 결과와 비교 검증하였을 때, 본 연구에서 제안한 방식은 D₅₀에서 평균 8.21%의 평균 오차율을 보여 경계를 추출하지 않는 분석법 보다 65% 낮은 오차를 보였다. 따라서 스마트폰 디지털 이미지를 이용한 입도분포 분석은 간편하고 효율적이며 체가름시험에 준하는 정확성을 가짐을 확인하였다.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.