• Current Photovoltaic Research
• /
• 제1권1호
• /
• pp.38-43
• /
• 2013

$Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

• Current Photovoltaic Research
• /
• 제3권3호
• /
• pp.85-90
• /
• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Journal of Animal Science and Technology
• /
• 제48권6호
• /
• pp.897-906
• /
• 2006

본 연구는 셀레늄강화 한우고기 생산을 위하여 셀레늄강화 버섯폐배지(Se-SMC)가 함유된 셀레늄사료(사료내 셀레늄함량: 0.9ppm)를 활용하여 급여사양기간(2개월, 3개월, 4개월)을 달리 하였을 때, 비육후기 거세한우의 조직 내 셀레늄 함량과 혈중 글루타치온 과산화효소(GSH-Px) 활성에 미치는 영향을 조사하여 최대 포화축적기간을 제시하고자 실시하였다. 본 연구에 사용된 비육후기 거세한우는 30두로 각 급여기간(2개월: 평균 체중 677kg, 3개월: 평균 체중 610kg 및 4개월: 평균 체중 524kg)에 대한 대조구 및 Se-SMC 급여구로 나누어 처리구당 5두씩 배치하여 총 6처리구로 구분하여 실시하였다. 대조구와 Se-SMC 급여구에 사용된 실험사료는 0.1과 0.9ppm의 셀레늄을 각각 함유하였다. 각 급여기간이 종료되면 도축하여 후지와 간을 채취하였으며 이를 셀레늄 함량분석에 이용하였다. 그리고 혈중 셀레늄 농도 및 글루타치온 과산화효소활성을 분석하기 위하여 도축 시에 채혈을 실시하였다. 건물섭취량은 Se-SMC 급여 및 급여기간에 의하여 유의한 차이가 나타나지 않았다. 또한 일당증체량은 대조구 및 Se-SMC 급여구간 그리고 급여기간 간에 유의한 차이가 나타나지 않았을 뿐만 아니라 총증체량 또한 각 급여기간내 대조구와 Se-SMC 급여구 간에 유의한 차이가 나타나지 않았다. Se-SMC 급여는 혈중 셀레늄농도를 유의하게 증가시켰으나(P<0.001), 급여기간에 따른 혈중셀레늄 농도에는 유의한 영향을 미치지 않았다. 아울러 혈중 GSH-Px 활성은 혈중 셀레늄농도에서 나타난 양상과 유사한 경향을 나타내었고, 급여기간에 의한 효과는 나타나지 않았다. 후지내 셀레늄 함량은 급여기간(P<0.05)이 증가함에 따라, 그리고 Se-SMC 급여(P<0.001)에 의하여 유의하게 증가하였다. 하지만, Se-SMC의 3개월 급여군과 4개월 급여군 간에는 유의한 차이가 나타나지 않았다. 간내 셀레늄 함량은 Se-SMC의 급여기간이 증가함에 따라 다소 증가하는 경향을 나타내었으나 유의한 효과는 나타나지 않았다. 하지만, 동일한 급여기간 내 Se-SMC는 대조구에 비하여 유의하게 높았다(P<0.01).이상의 결과로부터 근육내 셀레늄 축적을 위한 적정 Se-SMC 급여기간은 후지와 간내 셀레늄 함량을 고려할 때 약 2 내지 3개월의 급여가 충분할 것으로 사료된다.

• 전기화학회지
• /
• 제14권3호
• /
• pp.145-151
• /
• 2011

ZnSe는 가시광선 영역에서 넓은 밴드갭을 가지고 있는 II-VI족 화합물 반도체 소자로서 레이저 다이오드, 디스플레이 그리고 태양전지와 같은 다양한 응용분야에 적용되고 있다. 본 연구에서는 전기화학적 전착방법을 이용하여 ITO 전극상에 ZnSe 박막을 합성하여, XRD와 SEM으로 ZnSe 결정의 합성과 zinc blende 구조의 형태를 관측하였고, UV 분광기를 활용하여 밴드갭을 측정한 결과 2.76 eV이었다. 또한, 분자동역학에서 활용되는 밀도범함수 이론 (DFT, Density Functional Theory)을 도입하여 ZnSe 결정에 대한 밴드 구조의 해석을 수행하였다. Zinc blende구조를 갖는 ZnSe 결정에 대하여 LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), 그리고 B3LYP (Becke, 3-parameter, Lee-Yang-Parr) 범함수를 이용하여 밴드구조와 상태밀도 (Density of State)를 모사하였다. 각각의 경우에 대해 에너지 밴드갭을 구한 결과, B3LYP 범함수로 해석한 경우에 실험치와 근사치인 2.65 eV의 밴드갭을 보여주었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.457-457
• /
• 2012

We presented plasma processing using a DC Arc Plasmatron for diamond deposition on Al2O3 ceramic substrates. Plasma surface treatments were conducted to improve deposition condition before processing for diamond deposition. The Al2O3 ceramic substrates deposited, $5{\times}15mm^2$, were investigated by Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Diffraction (XRD). Properties of diamond (111), (220) and (311) peaks were shown in XRD. We identified nanocrystalline diamond films on substrates. The results showed that deposition rate was approximately $2.2{\mu}m/h$ after plasma surface treatments. Comparing the above result with a common processing, deposition rate was improved. Also, the surface condition was improved more than a common processing for diamond deposition on Al2O3 ceramic substrates.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.382-382
• /
• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.61.2-61.2
• /
• 2007

• Bulletin of the Korean Chemical Society
• /
• 제30권4호
• /
• pp.853-856
• /
• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• 태양에너지
• /
• 제7권2호
• /
• pp.7-13
• /
• 1987

Indium-Tin-Oxide (ITO)/Selenium heterojunction solar cells which fabricated by vacuum deposition technique and annealing process has been investigated. Prior to the Selenium deposition, a thin tellurium layer (about $10{\AA}$) was deposited onto the ITO layers to provide a sufficient mechanical bond between the Oxide and Selenium layers. The amorphous Selenium layer was deposited onto the Te-ITO layers, and then the crystallization of the amorphous Selenium was carried out using a hot plate at about $180^{\circ}C$ for 4 min. Efficient Selenium solar cells with conversion efficiency as high as 4.52% under AM1 condition has been fabricated in polycrystalline Selenium layer ($6{\mu}m$). The optimum data in manufacturing Se solar cell was listed in table.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.398.1-398.1
• /
• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.