• Title/Summary/Keyword: Se/metal ratio

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Optimum Tool Design in a Multi-stage Rectangular Cup Drawing and Ironing Process with the Large Aspect Ratio by the Finite Element Analysis (유한요소해석을 이용한 세장비가 큰 직사각컵 다단계 디프 드로잉-아이어닝 공정의 최적 금형설계)

  • Kim, Se-Ho;Kim, Seung-Ho;Huh, Hoon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1077-1084
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    • 2002
  • Optimum tool design is carried out fur a multi-stage rectangular cup deep-drawing and ironing process with the large aspect ratio. Finite element simulation is carried out to investigate deformation mechanisms with the initial design made by an expert. The analysis considers the deep drawing process with ironing for the thickness control in the cup wall. The analysis reveals that the difference of the drawing ratio within the cross section and the irregular contact condition produce non-uniform metal flow to cause wrinkling and severe extension. For remedy, the modification guideline is proposed in the design of the tool and the process. Analysis results confirm that the modified tool design not only improves the quality of a deep-drawn product but also reduces the possibility of failure. The numerical result shows fair coincidence with the experimental one. After tryouts of the tool shape, the rectangular cup has been produced in the transfer press.

Comparison of Bioavailability and Biological Transfer Factor of Arsenic in Agricultural Soils with Different Crops

  • Oh, Se Jin;Kim, Sung Chul;Ok, Yong Sik;Oh, Seung Min;Ji, Won Hyun;Yang, Jae E.
    • Korean Journal of Soil Science and Fertilizer
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    • v.47 no.6
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    • pp.518-524
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    • 2014
  • Heavy metal pollution in agricultural field near at the abandoned metal mines has been a critical issue in Korea. In particular, bioaccumulation in plants can have detrimental effect on human health. Main objective of this research was to examine arsenic (As) concentration in soil with varied extraction methods and to determine bioaccumulation and biological transfer factor in different crops. Results showed that bioaccumulation ratio of As for total contents in soil was ordered leafy and stem vegetables (1.19%) > fruit bearing vegetables (0.79%) > pulses (0.40%) > root vegetables (0.36%) with different crop species. Among 6 different extraction methods, all of extraction methods showed high correlation ($R^2=0.87-0.97$) except DTPA ($R^2=0.25$) when comparing As concentration in soil extracted with different extractants and As concentration in each crops. Calculated biological transfer factor was ranged 0.002-0.018 depending on crop species. Overall, concentration of As in crops can be varied and best management practice for minimizing bioaccumulation of As should be considered depending on crop species.

A Study on the Electromagnetic Shielding Characteristics of Crash Pad Using Electrically Conductive Powders and Al-coated Glass Fiber as Filler in Automotive (전기전도성 분말과 알루미늄 코팅 유리섬유를 사용한 자동차용 크래쉬패드의 전자파 차폐 특성에 관한 연구)

  • Cho, Hong;Jeoung, Sun-Kyoung;Kim, Byeong-Woo
    • Journal of Powder Materials
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    • v.21 no.2
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    • pp.124-130
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    • 2014
  • The automotive industry is moving from the internal combustion engine to electric drive motors. Electric motors uses a high voltage system requiring the development of resources and components to shield the system. Therefore, in this study, we analyze electromagnetic interference (EMI) shielding effectiveness (SE) characteristics of an auto crash pad according to the ratio of electrically conductive materials and propylene. In order to combine good mechanical characteristics and electromagnetic shielding of the automotive crash pad, metal-coated glass fiber (MGF) manufacturing methods are introduced and compared with powder-type methods. Through this study, among MGF methods, we suggest that the chopping method is the most effective shielding method.

Geology and Ore Deposits of Yeonhwa Mine (연화광산(蓮花鑛山)의 지질광상(地質鑛床))

  • Han, Kap Soo
    • Economic and Environmental Geology
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    • v.2 no.3
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    • pp.47-57
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    • 1969
  • The Yeonhwa Lead and Zinc Mine is located in northern part of Kyeongsang-Buk-Do, Korea, and is economically most important mine because it produces most part of the output of lead and zinc minerals in the country. Ore deposits of the mine are localized in the Pungchon Formation and several limestone seams of upper Myobong Formation in Cambrian Age. Ore solution ascended along the fractures of N-S, NE-SW or NW-SE trends and along slate and limestone boundary, and then replaced selectively limestone to make ore bodies. Skarn minerals are consisted of hedenbergite, diopside, and main sulfide mineral orebodies are composed of galena, zincblende, pyrrhotite, pyrite and a minor amounts of arsenopyrite and chalcopyrite. Metal ratio, ${\rho}_{Pb}={\frac{Pb(%)}{Pb(%)+Zn(%)}}{\times}100$, illustrates the zona I arrangements of some ore bodies. It will be inferred the flow trending of ore solution and the process reaction with adjacent country rocks. The sub-divided formations of the Pungchon limestone and Myobong slate are very useful as a criteria for detecting probable ore location. Rhodochrosite veins are good evidence for searching of ore location, especially on Pb-rich ore bodies.

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Solution-Processed Indium-Gallium Oxide Thin-Film Transistors for Power Electronic Applications (전력반도체 응용을 위한 용액 공정 인듐-갈륨 산화물 반도체 박막 트랜지스터의 성능과 안정성 향상 연구)

  • Se-Hyun Kim;Jeong Min Lee;Daniel Kofi Azati;Min-Kyu Kim;Yujin Jung;Kang-Jun Baeg
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.4
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    • pp.400-406
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    • 2024
  • Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

Synthesis of $BaTiO_3$ nanoparticle by a solvothermal method (Solvothermal 방법에 의한 $BaTiO_3$ 나노입자의 합성)

  • Yeo, Ki-Ho;Moon, Byung-Kee;Son, Se-Mo;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.732-734
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    • 2003
  • A solvothermal synthetic method to $BaTiO_3$ nanoparticle has been investigated in toluene solution with $BaTi(OR)_6$ as precursor. A precursor prepared from barium metal with toluene, isopropanol and titanium isopropoxide was used as a starting material. Weight ratio of precursor to solvent prepared in the mixture are 5/100, 10/100, 20/100 and 50/100wt%. At the weight ratio of 50/100wt%, $BaTiO_3$ butterfly twin crystalline(${\fallingdotseq}100nm$) was obtained after synthesis at $250^{\circ}C$ for 20hrs in an autoclave. X-ray diffraction and transmission electron microscopy showed that the product of 50/100wt% has crystallization. At 5/100, 10/100, and 20/100wt%, however, red colloidal solution was obtained after synthesis and crystalline phase of $BaTiO_3$ was not produced.

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Characterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells (18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석)

  • Kim, Sun Cheul;Kim, Seung Tae;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.2
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    • pp.54-60
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    • 2015
  • ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

Distribution Behavior of Bi and Pb Between Molten PbO-SiO2 Slag and Bi (용융(熔融) PbO-SiO2계(系) 슬래그와 Bi 사이의 Bi와 Pb의 분배거동(分配擧動))

  • Kim, Se-Jong;Kim, Eung-Jin;Sohn, Ho-Sang
    • Resources Recycling
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    • v.21 no.5
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    • pp.65-71
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    • 2012
  • The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

A Study on the Artifact Reduction Method of Magnetic Resonance Imaging in Dental Implants and Prostheses (치아 임플란트와 보철에서 발생하는 자기공명영상의 인공물 감소방안 연구)

  • Shin, Woon-Jae
    • Journal of the Korean Society of Radiology
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    • v.13 no.7
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    • pp.1025-1033
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    • 2019
  • Although magnetic resonance imaging without linear hardening of CT is recognized as a method of obtaining high contrast of tissue and excellent resolution image in brain disease and head and neck examination, magnetic susceptibility artifact is generated in case of metal implants in the oral cavity, which is an obstacle to image diagnosis. Therefore, an effort was made in this thesis to find a method to reduce artifacts caused by dental implants and prosthesis in MRI. Implant-induced artifacts in magnetic resonance imaging showed that the signal size increased with shorter TE in GE technique and was inconsistent with water temperature change. In SE technique as well, the signal size of water was generally higher than that of air, but the signal to noise ratio (SNR) was not different by air and temperature. In EPI technique, images with fewer artifacts were obtained quantitatively and qualitatively when there was more water than air, and the signal to noise ratio was measured the highest, especially at water temperatures of 20° and 30°. In conclusion, when examining using the EPI technique rather than the SE or the GE technique, obtaining brain diffusion using a 20° and 30° water bag reduces the magnetic susceptibility artifacts caused by implants and prosthesis, suggesting that it may provide images with high diagnostic value.

Resistive Switching Characteristic of Direct-patternable Amorphous TiOx Film by Photochemical Metal-organic Deposition (광화학증착법에 의한 직접패턴 비정질 TiOx 박막의 제조 및 저항변화 특성)

  • Hwang, Yun-Kyeong;Lee, Woo-Young;Lee, Se-Jin;Lee, Hong-Sub
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.1
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    • pp.25-29
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    • 2020
  • This study demonstrates direct-patternable amorphous TiOx resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiOx film was confirmed by atomic force microscopy. Amorphous TiOx RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.