• Title/Summary/Keyword: Se/metal ratio

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Performance Improvement by Controlling Se/metal Ratio and Na2S Post Deposition Treatment in Cu(In,Ga)3Se5 Thin-Film Solar cell

  • Cui, Hui-Ling;Kim, Seung Tae;Chalapathy, R.B.V.;Kim, Ji Hye;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.7 no.4
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    • pp.103-110
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    • 2019
  • Cu(In,Ga)3Se5 (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu1.05(In0.59,Ga0.41)3Sey, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na2S post deposition treatment. Our results indicate that Na2S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.

Determining Heavy Metal (loid) Stabilization Materials and Optimum Mixing Ratio: Aqueous Batch test

  • Oh, Seung Min;Oh, Se Jin;Kim, Sung Chul;Lee, Sang Hwan;Ok, Yong Sik;Yang, Jae E.
    • Korean Journal of Soil Science and Fertilizer
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    • v.47 no.6
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    • pp.540-546
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    • 2014
  • Acid mine drainage sludge (AMDS) has been classified as mine waste and generally deposited in land. For this reason, studies have been conducted to examine the possibility of recycling AMDS as an amendment for heavy metal stabilization in soil. The main objective of this study was to evaluate heavy metal stabilization efficiency of AMDS comparing with the widely used lime stone. Also, optimum mixing ratio was evaluated for enhancing heavy metal stabilization. AMDS and limestone were mixed at the ratio of 0:100, 25:75, 50:50, 75:25, and 100:0 with five different heavy metal solutions ($100mg\;L^{-1}$ of $NaAsO_2$, $CdCl_2$, $CuCl_2$, $Pb(NO_3)_2$, and $ZnSO_4{\cdot}7H_2O$). The amendments were added at a rate of 3% (w/v). In order to determine the stabilization kinetics, samples were collected at different reaction time of 0, 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, 1024 minutes. The heavy metal stabilization by AMDS was faster and higher than those of limestone for all examined heavy metals. While limestone showed only 20% of arsenic (As) stabilization after 1,024 minutes, 96% of As was stabilized within 1 minute by AMDS. The highest effect on the stabilization of heavy metal (loid) was observed, when the two amendments were mixed at a ratio of 1:1. These results indicated that AMDS can be effectively used for heavy metal stabilization in soil, especially for As, and the optimum mixing ratio of AMDS and lime was 1:1 at a rate of 3% (w/v).

Ga Distribution in Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Co-Sputtered Cu-In-Ga Precursor with Ga2Se3 Layer (Ga2Se3 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se2 박막의 Ga 분포 변화 연구)

  • Jung, Gwang-Sun;Shin, Young-Min;Cho, Yang-Hwi;Yun, Jae-Ho;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.434-438
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    • 2010
  • The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

Investigation on Metal Transfer in GMA Welding through Dimensional Analysis (차원 해석을 통한 GMA 용접의 금속이행 현상에 관한 분석)

  • 최상균;유중돈
    • Journal of Welding and Joining
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    • v.17 no.1
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    • pp.62-70
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    • 1999
  • Since various parameters including the welding conditions and material properties are involved in metal transfer, it is difficult to figure out the effects of each parameter. In this study, dimensional analysis in performed to reduce the number of the parameters and to reveal the effect of each parameter on metal transfer. Dimensionless parameters are derived based on the inertia force and surface tension, and their contributions on metal transfer are estimated by analyzing the calculated results using the volume of fluid (VOF) method. Among several dimensionless parameters, $N_{SE}(=$\mu$_{0}I^{2}/d_{w}${\gamma}$)$ which represents the ratio of the electromagnetic force to surface tension, is found to be appropriate to describe metal transfer and estimate the transition current. Predicted results of transition current and drop size are in reasonably good agreements with available experimental date which show the validity of proposed dimensional analysis.

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Fabrication of a Cu2ZnSn(S,Se)4 thin film solar cell with 9.24% efficiency from a sputtered metallic precursor by using S and Se pellets

  • Gang, Myeong-Gil;Hong, Chang-U;Yun, Jae-Ho;Gwak, Ji-Hye;An, Seung-Gyu;Mun, Jong-Ha;Kim, Jin-Hyeok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.86.2-86.2
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    • 2015
  • Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

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Catalytic Decomposition of Hydrogen Peroxide by Transition Metal Ions (금속 이온에 의한 과산화수소의 촉매분해)

  • Kim, Se-Jong;Yoon, Byung-Ho
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.38 no.3 s.116
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    • pp.79-84
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    • 2006
  • Hydrogen peroxide has been a bleaching chemical for varied pulp, especially mechanical and deinking pulp. It is catalytically decomposed by some transition metals in pulp slurry. In this paper, some metals which can be contained in pulp such as manganese, copper, iron, magnesium and calcium were used to investigate their effect on the decomposition of hydrogen peroxide. From the result, hydrogen peroxide was more decomposed in the order of Mn, Cu, $Fe^{3+}\;and\;Fe^{2+}$, while Mg and Ca had little effect on the decomposition of hydrogen peroxide. The effect of Mg/Mn ratio on the decomposition of hydrogen peroxide was also investigated. At the specific ratio of them(Mg/Mn=10), hindering effect of peroxide decomposition by Mg was decreased.

Comparison of heavy metal concentrations in hairs of a small sample of Korean patients taking traditional herbal medicine

  • Park, Yeong-Chul;Kim, Myung-Dong;Park, Sung-Kyun;Kim, Hyun-Do;Lee, Sun-Dong
    • Advances in Traditional Medicine
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    • v.10 no.3
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    • pp.141-149
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    • 2010
  • A concern of safety issue for traditional herbal medicine is the possibility of some herbs containing heavy metals responsible for several cases of metal poisoning. In our previous study, the physiological levels of heavy metals, such as Cd, Cu, Hg and Pb, were examined to evaluate a potential risk in patients taking herbal medicine. In this study, the levels of 12 heavy metals, including non-metallic element, Se, were analyzed in hair and compared to the results from the previous study. In the previous study, the levels of Cd, Cu, Hg and Pb in hair showed a significantly lower odds ratio than 1. In this study, however, all metals did not show any significant odds ratio higher or lower than 1 even if 5 of 12 metals showed lower odds ratio than 1. In addition, the levels of metal concentrations, especially for Cu, Fe, Pb and Zn, exceeding the WHO reference values were observed in hair. However, any evidence for metal accumulation in hair caused by taking herbal medicines for long duration was not observed in analysis of multiple regression and odds ratio from case-control study. This result would show another possibility for a role of herbs as a non-enzymatic chelator inhibiting the gastrointestinal absorption of heavy metals.

Comparison of the SNR in the MR images on dental implant material (치아 임플란트 재료에 따른 자기공명영상의 SNR 비교)

  • Kim, Dong-Hyun;Ko, Seong-Jin;Ye, Soo-Young
    • Journal of the Institute of Convergence Signal Processing
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    • v.16 no.4
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    • pp.149-155
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    • 2015
  • Tooth implant is located in oral cavity and affects neck, skull base, and facail image. These magnetic inhomogeneities are usually frequency encoding direction which cause artifacts due to change of signal strength and geometric distortion. First, to evaluate signal to noise ratio (SNR) of magnetic resonance image caused by tooth implant this study uses meat phantom which is similar to human body and is consisted with fat, muscle, and water to measure signal to noise ratio. Second, signal to noise ratio by using custom-made fixed phantom is measured, and then signal to noise ratio size of different tooth implant types is compared and analyzed. The measured signal to noise ratio values of Brushite, HSA, Metal, and RBM for meat phantom were 2.76, 2.22, 1.88, and 1.57 on T1 SE, 1.88, 1.78, 1.65, and 1.79 on T2 FLAIR, 2.28, 2.25, 2.88, and 2.05 on T2 FSE, and 2.74, 1.94, 1.67, and 1.48 on T2 GRE. The measured signal to noise ratio values of Brushite, HSA, Metal, and RBM for fixed water phantom were 1.2, 1.06, 1.12, and 1.22 on DWI, 1.93, 1.87, 1.93, and 2.06 T1 SE, 1.83, 1.76, 1.82, and 1.92 on T2 FLAIR, 1.85, 1.79, 7.86, and 1.97 on T2 FSE, and 1.97, 1.93, 1.99, and 2.06 on T2 GRE. By considering through the results, patients and dentists need to consider some impacts from testing many aspects although their main purpose of having tooth implants is a dental restoration. Moreover, depending on the tooth implant characteristics of individual patients this study results can be used as baseline data when choosing test protocol.

Study on the Effect of Resin Mixture Ratios on the Fatigue Crack Propagation Behavior and Mechanical Property in a FRMLs (수지 혼합비가 FRMLs의 피로균열전파거동과 기계적 성질에 미치는 영향에 관한 연구)

  • Kim, Cheol-Woong;Sohn, Se-Won
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.8
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    • pp.149-154
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    • 1999
  • FRMLs(Fiber Reinforced Metal Laminates) is a new type of hybrid materials. FRMLs consists of high strength metal and fiber which are laminated using a structural adhesive bond(epoxy resin). The effect of resin mixture ratios on the fatigue crack propagation behavior and mechanical property of Aramid fiber reinforced aluminum composites was investigated. The epoxy, diglycidylether of bisphenol A(DGEBA) was cured with methylene dianiline(MDA) with or without accelerator(K-54). Eight kinds of resin mixture ratio were tested for the experiment ; five kinds of FRMLs(1))epoxy & curing agent) and three kinds of FRMLs(2)(epoxy & curing agent & accelerator). FRMLs(2) have a more effective characteristics on the fatigue crack propagation behavior and mechanical property than FRMLs(1)

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Preparation of Seleinzed CuInSeS12T Thin Films P-type Conductivity (P형 전기전도도 특성을 갖는 $Selenized CuInse_2$ 박막의 제조)

  • 박성;김선재
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.2
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    • pp.296-302
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    • 1994
  • Polycrystalline CuInSeS12T thin were prepared by depositing Cu/In layer, which was sequentially sputtered varying the Cu/(Cu+In) mole ratio, on glass substrate and selenizing with selenium metal vapor in a nitrogen atmosphere. Compositional and structural, characterization was carried out by X-ray diffraction (XRD), wavelength-dispersive spectroscopy(WDS), and scanning electron microscope(SEM). Electrical characterization was carried out by the measurements of Hall effect, electrical resistivity. Large indium loss occurs in early stage of the selenization process. The selenized films which had mole ratios larger than 0.28 have chalcopyrite CuInSeS12T phase and these that had less mole ratios have sphalerite phase. The selenized films containing CuS1xTSe phase have Cu-rich CuInSeS12T phase and these that did not contain CuS1xTSe have In-rich CuInSeS12T phase. By optimizing the sputtering conditions,it is possible to fabricate CuInSeS12T thin films which have little secondary phases and an appropriate hole concentration (10S015T ~ 10S016TcmS0-3T) for solar cells.