• Asian-Australasian Journal of Animal Sciences
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• 제16권11호
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• pp.1577-1582
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• 2003

This study was conducted to determine the effects of prophylactic supplementation of vitamin E and Se on oxidative damage and antioxidant status. Fifteen healthy male buffalo (Bubalus bubalis) calves between the age of 6 to12 months were divided into three groups of five animals each: Group I-control, group II-endotoxic shock group infused with lyophilized E coli endotoxin @ 5 ${\mu}g$/kg body wt, and group III-supplemented with vitamin E @ 250 mg and Se @ 7.5 mg, one month prior to induction of endotoxic shock. All the animals in group II and group III exhibited signs of endotoxic shock. When the endotoxic shock was induced, there was significant (p<0.05) increase in the circulating levels of malonyl dialdehyde MDA (an indicator of lipid peroxidation). In the supplemented group III the magnitude of formation of MDA was also less as compared to group II at every stage of study. There was significant (p<0.05) decrease in circulating levels of SOD, GSH-Px, Catalase and G-6-PD activity from the normal (0 h) value with passage of time. As a result of endotoxic shock, these values reached a lowest value, and then showed a tendency towards the 0 h value. Prophylactic supplementation with vitamin E and Se was successful in reducing the quantum of oxidative damage due to formation of free radicals because of endotoxic shock.

• 한국군사과학기술학회지
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• 제15권4호
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• 대한소아치과학회지
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• 제40권4호
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• pp.283-295
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• 2013

본 연구는 시효처리가 세 가지 상아질 접착제의 미세누출에 미치는 영향을 MicroCT를 이용하여 조사하였다. 5세대 상아질 접착제인 Adper$^{TM}$ Single bond Plus(3M-ESPE, USA)와 6세대 상아질 접착제인 AdheSE$^{(R)}$(Ivoclar Vivadent, Lichtenstein)와 Adper$^{TM}$ Prompt$^{TM}$ L-Pop$^{TM}$(3M-ESPE, USA)을 이용하였다. 세 가지 상아질 접착제를 이용하여 3MESPE 사의 Filtek$^{TM}$ Z250을 V급 와동에 수복하고 24시간 생리식염수에 보관한 군(I군), 열 순환을 시행한 군(II군), 인공 칫솔질 법을 적용한 군(III군), 인공 타액에 6개월간 보관한 군(IV군)으로 분류하였다. Adper$^{TM}$ Single bond Plus를 이용한 시편은 II군과 III군에서 미세누출의 양이 늘어났으며 IV군에서 감소하였다. I군에 비해 II군이 많은 미세누출을 보였으며(p < 0.05), II군과 III군에 비하여 IV에서 적은 미세누출을 보였다(p < 0.05). AdheSE$^{(R)}$를 이용한 시편은 차이를 보이지 않았다(p > 0.05). Adper$^{TM}$ Prompt$^{TM}$ L-Pop$^{TM}$을 이용한 시편은 차이를 보이지 않았다(p > 0.05). I군에서는 AdheSE$^{(R)}$가 Adper$^{TM}$ Single bond Plus와 Adper$^{TM}$ Prompt$^{TM}$ L-Pop$^{TM}$에 비해 미세누출이 많다(p < 0.05). II군에서는 상아질 접착제간 차이가 없었다(p > 0.05). III군에서는 AdheSE$^{(R)}$가 Adper$^{TM}$ Single bond Plus와 Adper$^{TM}$ Prompt$^{TM}$ L-Pop$^{TM}$에 비해 미세누출이 많았다(p < 0.05). IV군에서는 Adper$^{TM}$ Single bond Plus에 비해 AdheSE$^{(R)}$와 Adper$^{TM}$ Prompt$^{TM}$ L-Pop$^{TM}$의 미세누출이 많았다(p < 0.05).

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.852-858
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• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.

• 대한치과교정학회지
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• 제21권1호
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• pp.171-183
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• 1991

This investigation was designed to categorize Angle's class II malocclusion groups through analyzing horizontal and vertical components of craniofacial skeleton in Angle's class II malocclusion. The material selected for this study consisted in standard lateral cephalogram of two hundred and twenteen children, eighty eight boys and one hundred twenty four girls, aged 6 through 18 years, having Angle's class II malocclusion. On the basis of findings of this study, the following results were obtained. 1. In horizontal skeletal classifications, 16 groups were classified according to FMN-A-B, SE-FMN-A, Ba-SE-Me, Ba-Se/Ra P. The sequences that have relatively high frequency are as follows: a) Horizontal Group 16 b) Horizontal Group 12 c) Horizontal Group 13 d) Horizontal Group 9 & 15 2. In vertical skeletal classification, 8 groups were classified according to the PMV/PP, PMV/Occ. P. PMV/Mn. P. The sequences that relatively high frequency are as follows; a) Vertical Group A b) Vertical Group D c) Vertical Group C d) Vertical Group H 3. In vertical and horizontal skeletal classifications, the sequence that relatively high frequency are as follows; a) Group13-A b) Group16-A & 9-A c) Group12-A & 15-A d) Group16-C

• Applied Microscopy
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• 제27권3호
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• 전기화학회지
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• 제14권3호
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• pp.145-151
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• 2011

ZnSe는 가시광선 영역에서 넓은 밴드갭을 가지고 있는 II-VI족 화합물 반도체 소자로서 레이저 다이오드, 디스플레이 그리고 태양전지와 같은 다양한 응용분야에 적용되고 있다. 본 연구에서는 전기화학적 전착방법을 이용하여 ITO 전극상에 ZnSe 박막을 합성하여, XRD와 SEM으로 ZnSe 결정의 합성과 zinc blende 구조의 형태를 관측하였고, UV 분광기를 활용하여 밴드갭을 측정한 결과 2.76 eV이었다. 또한, 분자동역학에서 활용되는 밀도범함수 이론 (DFT, Density Functional Theory)을 도입하여 ZnSe 결정에 대한 밴드 구조의 해석을 수행하였다. Zinc blende구조를 갖는 ZnSe 결정에 대하여 LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), 그리고 B3LYP (Becke, 3-parameter, Lee-Yang-Parr) 범함수를 이용하여 밴드구조와 상태밀도 (Density of State)를 모사하였다. 각각의 경우에 대해 에너지 밴드갭을 구한 결과, B3LYP 범함수로 해석한 경우에 실험치와 근사치인 2.65 eV의 밴드갭을 보여주었다.

• 방재와보험
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• 통권46호
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• pp.76-77
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• 1990

• 건축구조
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• 제21권2호
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• pp.14-19
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• 2014

• 한국통신학회논문지
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• 제24권9A호
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• pp.1322-1328
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• 1999

본 논문에서는 등간격 선형어레이로 입사하는 다중 인코히어런트 평면파의 도래각을 추정하기 위하여 신호부각법과 결합된 MUSIC(SE-MUSIC)을 제안한다. 제안된 SE-MUSIC 알고리즘은 다음 두 가지 과정을 중심으로 이루어진다. (i) 먼저 이상적인 공분산행렬이 갖는 특성을 가지며 Frobenius norm 면에서 추정된 공분산행렬에 가장 가까운 부각된 행렬을 찾고 (ii) 다음으로 부각된 행렬에 MUSIC 방법을 적용하여 입사신호의 도래각을 추정한다. 낮은 신호대 잡음비 환경에서도 제안된 SE-MUSIC이 기존의 MUSIC보다 분해능면이나 통계적 성능 면에서 우수한 성능을 제공함을 컴퓨터 시뮬레이션을 통하여 알 수 있었다.