• 한국진공학회지
• /
• 제2권2호
• /
• pp.161-165
• /
• 1993

Si(100)와 Si(111) 표면에 에피 성장시킨 Ge의 기하학적, 전기적 구조가 scanning tunneling microscope로 연구되었다. Ge 원자는 scanning tunneling spectroscopy와 bias 전압을 달리한 STM 상에서 Si 원자와 구별되었다. 이것을 이용하여 Ge의 성장 형태를 연구하였다. (2${\times}$1) 재배열 구조를 가진 (100) 표면에서 Ge 성장층은 720K에서 B형의 step edge로부터 주로 성장하였다. (111) 표면에서도 주로 step edge에서 성장하였으며, Ge의 양과 annealing 온도에 따라 (5${\times}$5)와 (7${\times}$7)구조가 보였다.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2005년도 춘계학술대회 논문집
• /
• pp.54-59
• /
• 2005

Recently, the ultra-precision stage is widely used in the fields of the nano-technology, specially in AFMs(Atomic Force Microscope) and STMs(Scanning Tunneling Microscope). In this paper, the ultra-precision stage which consists of flexure hinges, piezoelectric actuator, and ultra-precision linear encoder, is designed and developed. The guide mechanism which consisted of flexure hinges is analyzed by Finite Element Method. And we derived the transfer function of the system in 1st order system from step responses according to the magnitude. We performed simulation for the model to tune the control gain and applied the gains to the developed system. Experimental results found that the stage can be controlled in 5 nm resolution by PID controller.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.307-307
• /
• 2011

Graphene is the hottest topic in condensed-matter physics due to its unusual electronic structures such as Dirac cones and massless linear dispersions. Graphene can be epitaxially grown on various metal surfaces with chemical vapor deposition processes. Such epitaxial graphene shows modified electronic structures caused by substrates. Here, local geometric and electronic structures of graphene grown on Ru(0001) will be presented. Scanning tunneling microscopy (STM) and spectroscopy (STS) was used to reveal energy dependent atomic level topography and position-dependent differential conductance spectra. Both topography and spectra show variations from three different locations in rippled structures caused by lattice mismatch between graphene and substrate. Based on the observed results, structural models for graphene on Ru(0001) system were considered.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 1988년도 한국자동제어학술회의논문집(국제학술편); 한국전력공사연수원, 서울; 21-22 Oct. 1988
• /
• pp.794-797
• /
• 1988

G. Binnig and H. Rohrer introduced the Scanning Tunneling Microscope (STM) in 1982 and developed it into a powerful and not to be missed physical tool. Scanning tunneling Microscopy is a real space surface imaging method with the atomic or subatomic resolution in all three dimensions. The tip is scanned over the surface by two piezo translators mounted parallel (X-piezo and Y-piezo) to the surface and perpendicular to each other. The voltage applied to the third piezo (Z-piezo) translator mounted perpendicular to the surface to maintain the tunneling current through the gap at a constant level reflects then the topography of the surface. The feed back control loop for the constant gap current is designed using the automatic control technique. In the designing process of the feed back loop, the identification of the gap dynamics is very complex and has difficulty. In this research, using some suitable test signals, the system dynamics of the gap including the Z-piezo are investigated. Especially, in this paper, a system model is proposed for the gap and Z-piezo series system. Indicial response is used to find out the model. The driving voltage of the Z-piezo and the tunneling current are considered as input and output signals respectively.

• Bulletin of the Korean Chemical Society
• /
• 제28권1호
• /
• pp.85-88
• /
• 2007

Ab initio periodic Hartree-Fock calculations with the full potential and minimum basis set are applied to interpretation of scanning tunneling microscope (STM) and atomic force microscope (AFM) images on 1TVTe2. Our results show that the simulated STM image shows asymmetry while the simulated AFM image shows the circular electron densities at the bright spots without asymmetry of electron density to agree with the experimental AFM image. The bright spots of both the STM and AFM images of VTe2 are associated with the surface Te atoms, while the patterns of bright spots of STM and AFM images are different.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.645-645
• /
• 2013

Applying a first-principles computational approach combining density-functional theory and matrix Green's function calculations, we have studied the effects [2+2] cycloaddition olligormerization of fullerene $C_{60}$ chains on their junction charge transport properties. Analyzing first the microscopic mechanism of the switching realized in recent scanning tunneling microscope (STM) experiments, we found that, in agreement with experimental conclusions, the device characteristics are not significantly affected by the changes in electronic structure of $C_{60}$ chains. It is further predicted that the switching characteristics will sensitively depend on the STM tip metal species and the associated energy level bending direction in the $C_{60}-STM$ tip vacuum gap. Considering infinite $C_{60}$ chains, however, we confirm that unbound $C_{60}$ chains with strong orbital hybridizations and band formation should in principle induce a much higher conductance state. We demonstrate that a nanoelectromechanical approach in which the $C_{60}-STM$ tip distance is maintained at short distances can achieve a metal-independent and drastically improved switching performance based on the intrinsically better electronic connectivity in the bound $C_{60}$ chains.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.86-86
• /
• 2010

Water adsorption on Si(001)-c($4{\times}2$) surface is investigated at low temperature by using scanning tunneling microscope (STM) and ab initio pseudopotential calculations. $H_2O$ configurations of single and cluster of two molecules reveal "Y", "X" and "W" depressions as footprints on the surface. Atomic structures of $H_2O$ molecules, which are dissociatively adsorbed on the Si(001)-c($4{\times}2$) surface, are studied with simulated and STM images of the filled states. The generation processes of the growth configurations are systematically considered with elapsed time.

• 한국고분자학회지:고분자과학과기술
• /
• 제15권3호
• /
• pp.363-373
• /
• 2004

1980년대 초, IBM의 과학자들에 의해 양자역학 현상에 기초한 새로운 현미경이 발명되었다. 뾰족한 금속 팁에 전압을 걸고 전도성 시료의 표면에 접근시키면, 팁이 표면에 접촉하기 직전에 터널링에 의한 전류가 흐르게 된다. 이 전류는 거리에 매우 민감해서 고체 표면에 배열된 원자들에 의해 형성되는 표면 굴곡 (surface corrugation)이 분간 가능하였다. 이 기계가 바로 STM (Scanning Tunneling Microscope)이다 (그럼 1). 이 발명이 있기까지의 약 2세기 가량의 시간 동안 "누구에 의해서도 결코 감지된 적 없는" (H. J. Robinson, Physics Today, March, 24, 1984.) 원자와 분자는 과학자들의 논리 속에 이론상으로 존재할 뿐이었다. STM의 발명으로 인해 인류는 바야흐로 개개의 원자와 분자를 직접적으로 감지할 수 있게 되었던 것이다. 처음으로 STM을 이용하여 원자해상도로 본 표면은 실리콘의 안정한 표면인 Si (111)-7${\times}$7 표면이었는데, 이러한 실리콘 표면의 STM 사진의 예를 그림 2에 나타내었다. (중략)타내었다. (중략)

• 전자공학회논문지D
• /
• 제35D권9호
• /
• pp.42-47
• /
• 1998

현재의 전자빔 묘화의 한계를 극복할 수 있는 마이크로 전자빔 시스템의 전자 광학 렌즈를 제작하였고 전자빔 묘화실험을 통하여 이를 검증하였다. 마이크로머시닝기술을 이용하여 실리콘 전극을 제작하고 이를 양극 접합을 통해 조립하여 다층 전극의 전자 광학 렌즈를 제작하였다. 완성된 전자 광학 소자를 초고진공 챔버에 장착하여, STM(Scanning Tunneling Microscope) 팁에서 방출된 전자빔의 focusing 특성을 관찰하였으며 전자를 집속하여 리소그라피를 수행하였다. E-beam 감광막은 PMMA(Poly-methylmethacrylate)를 사용하였고 0.13㎛의 패턴을 형성시킬 수 있었다.

• 분석과학
• /
• 제8권4호
• /
• pp.723-730
• /
• 1995

Cyclic voltammetry and in situ STM were employed to examine the interfacial structures of a Pt(111) electrode in 0.1 mM KCN (pH9.5) and 0.1 mM KSCN (pH7) solutions. In situ STM atomic resolution revealed well ordered (2${\surd}$3${\times}$2${\surd}$3)$R30^{\circ}$-6CN and ($2{\times}2$)-2SCN structures within the double layer charging region. Six CN adsorbates formed a hollow hexagon, which embraced a coadsorbed $K^+$ cation. In contrast, the coadsorbed $K^+$ cations on the SCN covered Pt(111) were poorly ordered, despite adsorbed SCN formed a long range ordered ($2{\times}2$)-2SCN adlattice. In situ STM revealed the pronounced influence of potential in controlling the structures of compact layers at the proximity of a Pt electrode. Cathodic polarization facilitated the replacement of the coadsorbed cations by protons.