• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.170.1-170.1
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• 2016

$Bi_2Te_3$ has long been studied for its excellent thermoelectric characteristics. Recently, this material has been known as a topological insulator (TI). The surface states within the bulk band gap of a TI, which are protected by the time reversal symmetry, contribute to the conduction at the surface, while the bulk is in insulating state. In contrast to the bulk defects tuning the chemical potential to the Dirac energy, the native defects near the surface are expected not to change the shape of the Fermi surface and the related spin structure. Using scanning tunneling microscopy (STM), we have systematically characterized surface or near surface defects in p- and n- doped $Bi_2Te_3$, and identified their structure by first principles calculations. In addition, bias-polarity dependences of STM images revealed the electron donor/acceptor nature of each defect. A detailed theoretical study of the surface states near the Dirac energy reveals the robustness of the Dirac point, which verifies the effectiveness of the disturbance on the backscattering from various kinds of defects.

• 한국진공학회지
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• 제22권6호
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• pp.285-290
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• 2013

금속 기판 위에 성장한 그래핀은 원자구조와 전자구조 연구에 우수한 기반이 된다. 그래핀은 금소 기판에서 탄소의 surface segregation 이나 chemical vapor deposition으로 성장할 수 있는데, 이 두 방법의 성장 양상에 대한 비교 연구는 아직까지 없었다. 본 연구에서는 surface segregation, 흡착된 에틸렌의 post-annealing, 에틸렌의 high-temperature dose 등 3 방법으로 성장한 그래핀의 성장구조를 주사형 터널링 현미경으로 연구했다. 처음 2종류의 방법에서는 $100nm^2$ 수준의 작은 그래핀 영역이 나타났고, 3 번째 방법에서는 $10^4nm^2$ 보다 큰 그래핀이 육각형 무아레 무늬와 함께 타나났다. 본 연구에서는 에틸렌의 high-temperature dose 방법이 추가적인 분자성장 등에 필요한 넓은 그래핀을 성장하기에 가장 좋은 방법임을 보였다.

• Bulletin of the Korean Chemical Society
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• 제32권4호
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• pp.1253-1257
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• 2011

The surface structures, adsorption conditions, and thermal desorption behaviors of cyclopentanethiol (CPT) self-assembled monolayers (SAMs) on Au(111) were investigated by scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and thermal desorption spectroscopy (TDS). STM imaging revealed that although the adsorption of CPT on Au(111) at room temperature generates disordered SAMs, CPT molecules at $50^{\circ}C$ formed well-ordered SAMs with a $(2{\surd}3{\times}{\surd}5)R41^{\circ}$ packing structure. XPS measurements showed that CPT SAMs at room temperature were formed via chemical reactions between the sulfur atoms and gold surfaces. TDS measurements showed two dominant TD peaks for the decomposed fragments ($C_5H_9^+$, m/e = 69) generated via C-S bond cleavage and the parent molecular species ($C_5H_9SH^+$, m/e = 102) derived from a recombination of the chemisorbed thiolates and hydrogen atoms near 440 K. Interestingly, dimerization of sulfur atoms in n-alkanethiol SAMs usually occurs during thermal desorption and the same reaction did not happen for CPT SAMs, which may be due to the steric hindrance of cyclic rings of the CPT molecules. In this study, we demonstrated that the alicyclic ring of organic thiols strongly affected the surface structure and thermal desorption behavior of SAMs, thus providing a good method for controlling chemical and physical properties of organic thiol SAMs.

• Bulletin of the Korean Chemical Society
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• 제31권4호
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• pp.901-904
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• 2010

Decylthiocyanate (DTC) self-assembled monolayers (SAMs) on Au(111) were prepared by solution and vapor phase deposition methods at $50^{\circ}C$ for 24 h. The formation and surface structure of DTC SAMs were examined using scanning tunneling microscopy (STM). STM imaging revealed that DTC SAMs formed in 1 mM ethanol solution at $50^{\circ}C$ were composed of small ordered domains with lateral dimensions of a few nanometers and disordered phases, whereas DTC SAMs formed in the vapor phase at $50^{\circ}C$ contained two ordered phases: a closely packed c($4{\times}2$) superlattice and a striped phase with an interstripe spacing of 2.6 - 2.8 nm. It was also found that the ordered domain and vacancy island formation for DTC SAMs on Au(111) differs significantly from that of decanethiol SAMs, suggesting that adsorption mechanism is different from each other. From this study, it was confirmed that DTC SAMs with a high degree of structural order can be obtained by vapor phase deposition.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1390-1391
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• 2006

본 연구에서는 전도성 분자로 잘 알려진 4,4-Di(ethynyl phenyl) -2'-nitro-1-(thioacetyl)-benzene(nitro - benzene) 분자를 Au (111) 표면에 자기조립하고, ultra high vacuum scanning tunneling microscopy (UHV-STM)을 사용하여 STM tip과 sample 사이의 거리를 변화시키면서 전기전도 특성을 측정하였다. Au 기판제작은 연증착시스템 (Thermal Evaporation System)으로 제작하였으며, piranha 용액 ($H_{2}SO_{4}\;:\;H_{2}O_{2}$=3:1)을 사용하여 전치리한 후, 자기조립 단분자막 (SAMs)을 형성하였다. 먼저 1-octanethiol을 ethanol solution용액 1 mM/L 농도에서 24시간 동안 자기조립한 후에, ethanol를 solution 용액으로 이용하여 nitro-benzene를 0.1 nM/L 농도로 암실에서 30분간 자기조립 하였다. 자기조림 후 solution을 제거하기 위해 에탄올로 세척하여 $N_2$로 건조시켰다. 이 조건하에서 UHV-STM을 사용하여 nitro-benzene SAMs의 실시간 모폴로지의 변화에 따른 nitro-benzene의 전기전도 특성을 STM tip - SAMs - Au 기판의 수직구조로 STM tip과 nitro-benzene의 거리를 변화시키면서, tunneling current을 조사하였다. 측정 결과 Z-position 변화에 대한 tunneling current와 resistance의 변화를 확인할 수 있었다.

• Applied Science and Convergence Technology
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• 제25권2호
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• pp.28-31
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• 2016

The structural and the electronic properties of pentacene on modified Si (001) were investigated using scanning tunneling microscopy (STM), atomic force microscopy (AFM) and ultraviolet photoelectron spectroscopy (UPS). Dodecane was used to modify Si (001) substrates and then pentacene was deposited on dodecane/Si (001). Our STM results show a uniform distribution of aggregated dodecane molecules all over the clean Si (001). The surface structure of pentacene on dodecaene/Si (001) examined by AFM is analogous to that of pentacene on $SiO_2$. The UPS data showed that the work function of pentacene on clean Si (001) and pentacene on modified Si (001) with dodecane was 6.41 and 5.57 eV, respectively. Our results prove that dodecane results in the work function difference between pentacene on clean Si (001) and pentacene on dodecane/Si (001).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• 한국고분자학회지:고분자과학과기술
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• 제15권3호
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• pp.363-373
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• 2004

1980년대 초, IBM의 과학자들에 의해 양자역학 현상에 기초한 새로운 현미경이 발명되었다. 뾰족한 금속 팁에 전압을 걸고 전도성 시료의 표면에 접근시키면, 팁이 표면에 접촉하기 직전에 터널링에 의한 전류가 흐르게 된다. 이 전류는 거리에 매우 민감해서 고체 표면에 배열된 원자들에 의해 형성되는 표면 굴곡 (surface corrugation)이 분간 가능하였다. 이 기계가 바로 STM (Scanning Tunneling Microscope)이다 (그럼 1). 이 발명이 있기까지의 약 2세기 가량의 시간 동안 "누구에 의해서도 결코 감지된 적 없는" (H. J. Robinson, Physics Today, March, 24, 1984.) 원자와 분자는 과학자들의 논리 속에 이론상으로 존재할 뿐이었다. STM의 발명으로 인해 인류는 바야흐로 개개의 원자와 분자를 직접적으로 감지할 수 있게 되었던 것이다. 처음으로 STM을 이용하여 원자해상도로 본 표면은 실리콘의 안정한 표면인 Si (111)-7${\times}$7 표면이었는데, 이러한 실리콘 표면의 STM 사진의 예를 그림 2에 나타내었다. (중략)타내었다. (중략)

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.197-197
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• 2011

In this study, in contrast with cases in which Scanning Tunneling Microscopy (STM) tip-induced reactions were instigated by the tunneling electrons, the local electric field, or the mechanical force between a tip and a surface, we found that the tungsten oxide (WO3) covered tungsten (W) tip of a STM acted as a chemical catalyst for the S-H dissociative adsorption of phenylthiol and 1-octanethiol onto a Ge(100) surface. By varying the distance between the tip and the surface, the degree of the tip-catalyzed adsorption could be controlled. We have found that the thiol head-group is the critical functional group for this catalysis and the catalytic material is the WO3 layer of the tip. After removing the WO3 layer by field emission treatment, the catalytic activity of the tip has been lost. 3-mercapto isobutyric acid is a chiral bi-functional molecule which has two functional groups, carboxylic acid group and thiol group, at each end. 3-Mercapto Isobutyric Acid adsorbs at Ge(100) surface only through carboxylic acid group at room temperature and this adsorption was enhanced by the tunneling electrons between a STM tip and the surface. Using this enhancement, it is possible to make thiol group-terminated surface where we desire. On the other hand, surprisingly, the WO3 covered W tip of STM was found to act as a chemical catalyst to catalyze the adsorption of 3-mercapto isobutyric acid through thiol group at Ge(100) surface. Using this catalysis, it is possible to make carboxylic acid group-terminated surface where we want. This functional group-selective adsorption of bi-functional molecule using the catalysis may be used in positive lithographic methods to produce semiconductor substrate which is terminated by desired functional groups.