• 제목/요약/키워드: Scaled down stamp

검색결과 2건 처리시간 0.016초

나노 복화공정의 역방향 적층법을 이용한 직접적 나노패턴 생성에 관한 연구 (Directly Nano-precision Feature Patterning on Thin Metal Layer using Top-down Building Approach in nRP Process)

  • 박상후;임태우;양동열;공홍진
    • 한국정밀공학회지
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    • 제21권6호
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    • pp.153-159
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    • 2004
  • In this study, a new process to pattern directly on a thin metal layer using improved nano replication printing (nRP) process is suggested to evaluate the possibilities of fabricating a stamp for nano-imprinting. In the nRP process, any figure can be replicated from a bitmap figure file in the range of several micrometers with nano-scaled details. In the process, liquid-state resins are polymerized by two-photon absorption which is induced by femto-second laser. A thin gold layer was sputtered on a glass plate and then, designed patterns or figures were developed on the gold layer by newly developed top-down building approach. Generally, stamps fur nano-imprinting have been fabricated by using the costly electron-beam lithography process combined with a reactive ion-etching process. Through this study, the effectiveness of the improved nRP process is evaluated to make a stamp with the resolution of around 200nm with reduced cost.

나노임프린트 리소그래피를 위한 스케일 다운된 산화막 스탬프 제작과 패턴결함 개선에 관한 연구 (Improved Defect Control Problem using Scaled Down Silicon Oxide Stamps for Nanoimprint Lithography)

  • 박형석;최우범;성만영
    • 한국전기전자재료학회논문지
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    • 제19권2호
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    • pp.130-138
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    • 2006
  • We have investigated pattern scaling down of silicon stamps through the oxidation technique, During oxidizing the silicon stamps, silicon dioxide that has 300 nm and 500 nm thickness was grown, and critical deformations were not observed in the patterns. There was positive effect to reduce size of patterns because vertical and horizontal patterns have different orientation. We achieved pattern reduction rate of $26\%$. In addition, the formation of polymer patterns had been investigated with varied temperature and pressure conditions to improve the filling characteristics of polymers during nanoimprint lithography when pattern sizes were few micrometers. In these varied conditions, polymers had been affected by free space compensation and elastic stress relaxation for filling the cavities. Based on the results, defect control which is an important issue in the nanoimprint lithography were facilitated.